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    METHOD FOR PRODUCING GaN FILM
    4.
    发明公开
    METHOD FOR PRODUCING GaN FILM 有权
    用于生产GaN薄膜

    公开(公告)号：EP2551892A4

    公开(公告)日：2016-06-22

    申请号：EP11841250

    申请日：2011-11-10

    申请人： SUMITOMO ELECTRIC INDUSTRIES

    发明人： SATOH ISSEI ,  SEKI YUKI ,  UEMATSU KOJI ,  YAMAMOTO YOSHIYUKI ,  MATSUBARA HIDEKI ,  FUJIWARA SHINSUKE ,  YOSHIMURA MASASHI

    IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/762 ,  H01L33/00

    CPC分类号： H01L33/007 ,  H01L21/76256 ,  H01L33/0079

    摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate (10), the composite substrate including a support substrate (11) in which a coefficient of thermal expansion in a main surface (11m) is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film (13) arranged on a side of the main surface (11m) of the support substrate (11), the single crystal film (13) having threefold symmetry with respect to an axis perpendicular to a main surface (13m) of the single crystal film (13), and forming a GaN-based film (20) on the main surface (13m) of the single crystal film (13) in the composite substrate (10). Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

    WAVELENGTH CONVERSION ELEMENT AND METHOD FOR MANUFACTURING WAVELENGTH CONVERSION ELEMENT
    5.
    发明公开
    WAVELENGTH CONVERSION ELEMENT AND METHOD FOR MANUFACTURING WAVELENGTH CONVERSION ELEMENT 有权
    用于制造波长变换元件的波长变换元件和方法

    公开(公告)号：EP2309324A4

    公开(公告)日：2013-05-01

    申请号：EP09804892

    申请日：2009-07-28

    申请人： SUMITOMO ELECTRIC INDUSTRIES

    发明人： SATOH ISSEI ,  MIYANAGA MICHIMASA ,  YAMAMOTO YOSHIYUKI ,  NAKAHATA HIDEAKI

    IPC分类号： G02F1/355 ,  G02F1/377

    CPC分类号： G02F1/3775 ,  G02F1/3558 ,  G02F2202/101 ,  Y10T156/1075

    摘要： A wavelength conversion element having an improved property-maintaining life and a method for manufacturing the wavelength conversion element are provided. A wavelength conversion element 10a has an optical waveguide 13. The wavelength of incoming light 101 input from one end 13a of the optical waveguide 13 is converted and outgoing light 102 is output from the other end 13b of the optical waveguide 13. The wavelength conversion element includes a first crystal 11 composed of Al x Ga (1-x )N (0.5 ‰¤ x ‰¤ 1); and a second crystal 12 having the same composition as that of the first crystal. The first and second crystals 11 and 12 form a domain-inverted structure in which a polarization direction is periodically reversed along the optical waveguide 13, and the domain-inverted structure satisfies quasi phase matching conditions with respect to the incoming light 101. At least one of the first and second crystals has a dislocation density of 1 × 10 3 cm -2 or more and less than 1 × 10 7 cm -2 .