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    METHOD FOR ABRASING GaN SUBSTRATE
    1.
    发明公开
    METHOD FOR ABRASING GaN SUBSTRATE 有权
    方法刮出来GaN衬底

    公开(公告)号：EP1814149A4

    公开(公告)日：2009-04-29

    申请号：EP05822594

    申请日：2005-12-28

    申请人： SUMITOMO ELECTRIC INDUSTRIES

    发明人： MATSUMOTO NAOKI

    IPC分类号： H01L21/304 ,  B24B37/04 ,  B24B37/12

    CPC分类号： H01L21/02024 ,  B24B7/228 ,  C30B29/406 ,  C30B33/00

    摘要： A method for abrasing a GaN substrate which comprises a step (a first abrasion step) of abrasing the GaN substrate using a surface plate (101) and an abrasive fluid (27) containing an abrasive material (23) and a lubricating agent (25), while supplying the abrasive fluid (27) onto the surface plate (101), and a step (a second abrasion step)of abrasing the GaN substrate using a surface plate (101) having an abrasive material (29) implanted therein, while supplying a lubricating agent (31) onto the surface plate (101) having an abrasive material (29) implanted therein.

    GALLIUM NITRIDE SEMICONDUCTOR SUBSTRATE AND PROCESS FOR PRODUCING THE SAME
    6.
    发明公开
    GALLIUM NITRIDE SEMICONDUCTOR SUBSTRATE AND PROCESS FOR PRODUCING THE SAME 审中-公开
    氮化镓半导体衬底及其制造工艺

    公开(公告)号：EP1679740A4

    公开(公告)日：2009-09-02

    申请号：EP04771650

    申请日：2004-08-06

    申请人： SUMITOMO ELECTRIC INDUSTRIES

    发明人： NAKAYAMA MASAHIRO ,  MATSUMOTO NAOKI

    IPC分类号： H01L21/306 ,  C30B29/38 ,  H01L21/304 ,  H01L21/3065 ,  H01L33/32

    CPC分类号： H01L21/02019 ,  H01L21/30612

    摘要： A processing-degenerated layer occurs when nitride semiconductor single crystal wafers are polished. Etching must be performed for removing the processing-degenerated layer. However, since nitride semiconductors are chemically inert, no appropriate etchant is available. Although potassium hydroxide and phosphoric acid have been proposed as an etchant for GaN, their power of corroding the surface of Ga is weak. For removing the processing-degenerated layer, dry etching with the use of halogen plasma can be conducted. Even Ga surface can be pared off by halogen plasma. However, the dry etching would cause a new problem of surface contamination by metal particles. Therefore, wet etching is performed by the use of HF+H2O2, H2SO4+H2O2, HCl+H2O2, HNO3, etc. having no selectivity, being corrosive and having an oxidation-reduction potential of 1.2 V or higher as an etchant.