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1.发明公开METHOD FOR MACHINING NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR WAFER, PROCESS FOR PRODUCING NITRIDE SEMICONDUCTOR DEVICE, AND NITRIDE SEMICONDUCTOR DEVICE 审中-公开METHOD FOR期一NITRIDHALBLEITERWAFERS，NITRIDHALBLEITERWAFER，METHOD工业生产用于制造氮化物半导体器件和氮化物半导体器件
公开(公告)号：EP2246877A4
公开(公告)日：2013-10-30
申请号：EP09714856
申请日：2009-02-16
IPC分类号： H01L21/304 , B24B9/00 , B24D3/00 , B24D3/22 , B24D3/32 , H01L21/306 , H01L21/3065 , H01L33/32
CPC分类号： H01L21/02021 , C30B29/403 , C30B33/00 , H01L24/32 , H01L33/0075 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , Y10S438/928 , Y10S438/959 , Y10S438/977 , H01L2924/00014 , H01L2924/00
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公开(公告)号：EP1649955A4
公开(公告)日：2009-10-21
申请号：EP03772725
申请日：2003-11-12
CPC分类号： C23C16/27 , B23G5/06 , B23G2200/26 , B23G2225/08 , B23G2225/16 , B23G2225/28 , C23C16/0218 , Y10T428/30
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3.发明公开METHOD FOR PROCESSING NITRIDE SEMICONDUCTOR CRYSTAL SURFACE AND NITRIDE SEMICONDUCTOR CRYSTAL OBTAINED BY SUCH METHOD 审中-公开用于处理氮化物HALBLEITERKRISTALLOBERFLûCHEN，并从这个过程中方法获得的氮化物半导体晶体
公开(公告)号：EP1560261A4
公开(公告)日：2008-02-20
申请号：EP04735986
申请日：2004-06-03
发明人： NAKAHATA SEIJI , HIROTA RYU , ISHIBASHI KEIJI , SASAKI TAKATOMO , MORI YUSUKE
IPC分类号： C30B29/38 , C30B29/40 , C30B33/00 , C30B33/10 , H01L21/306
CPC分类号： C30B29/403 , C30B29/38 , C30B33/00 , C30B33/10 , H01L21/30612
摘要： A method for processing a nitride semiconductor crystal surface is characterized in that a process liquid (15) containing at least Na, Li or Ca is brought into contact with the surface of a nitride semiconductor crystal (11). The process liquid (15) may be a liquid containing at least Na whose Na content is 5-95 mol%. The process liquid (15) may be a liquid containing at least Li whose Li content is 5-100 mol%. A nitride semiconductor crystal obtained by such a method is also disclosed which has a maximum surface scratch depth of 0.01 mum or less and an average degenerated layer thickness of 2 mum or less. Namely, the method for processing a nitride semiconductor crystal surface enables to reduce surface scratch depth and degenerated layer thickness, and the nitride semiconductor crystal obtained by such a method has a shallow surface scratch depth and a thin degenerated layer thickness.
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4.发明公开III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMICONDUCTOR DEVICE 审中-公开III族氮化物半导体衬底基板及半导体装置的外延
公开(公告)号：EP2485282A4
公开(公告)日：2015-02-11
申请号：EP10820172
申请日：2010-01-28
发明人： ISHIBASHI KEIJI
IPC分类号： H01L21/306 , C23C16/34 , C30B29/38 , C30B29/40 , H01L21/205 , H01L33/32
CPC分类号： H01L33/325 , C23C16/303 , C30B25/186 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/02439 , H01L21/0254 , H01L21/02658 , H01L24/32 , H01L33/00 , H01L33/12 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/0002 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： In a semiconductor device 100, it is possible to prevent C from piling up at a boundary face between an epitaxial layer 22 and a group III nitride semiconductor substrate 10 by the presence of 30×10 10 pieces/cm 2 to 2000×10 10 pieces/cm 2 of sulfide in terms of S and 2 at% to 20 at% of oxide in terms of O in a surface layer 12 with a front surface 10a having a specific plane orientation. Accordingly, a high-resistivity layer is prevented from being formed at the boundary face between the epitaxial layer 22 and the group III nitride semiconductor substrate 10. Consequently, it is possible to improve the emission intensity of the semiconductor device 100.
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5.发明公开COMPOUND SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE SEMICONDUCTOR DEVICE 审中-公开复合半导体衬底，半导体元件及其制造方法的半导体元件，
公开(公告)号：EP2381018A4
公开(公告)日：2013-03-13
申请号：EP09838333
申请日：2009-01-26
CPC分类号： C30B29/403 , C30B25/02 , C30B29/406 , C30B33/00 , C30B33/12
摘要： A compound semiconductor substrate 10 according to the present invention is comprised of a Group III nitride and has a surface layer 12 containing a chloride of not less than 200×10 10 atoms/cm 2 and not more than 12000× 10 10 atoms/cm 2 in terms of C1 and an oxide of not less than 3.0 at% and not more than 15.0 at% in terms of O, at a surface. The inventors conducted elaborate research and newly discovered that when the surface layer 12 at the surface of the compound semiconductor substrate 10 contained the chloride of not less than 200 × 10 10 atoms/cm 2 and not more than 12000x 10 10 atoms/cm 2 in terms of Cl and the oxide of not less than 3.0 at% and not more than 15.0 at% in terms of O, Si was reduced at an interface between the compound semiconductor substrate 10 and an epitaxial layer 14 formed thereon and, as a result, the electric resistance at the interface was reduced.
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6.发明公开GROUP-III NITRIDE CRYSTAL SUBSTRATE, GROUP-III NITRIDE CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME 审中-公开与外延层，半导体元件及其制造方法III族氮化物晶体衬底，III族氮化物晶体衬底
公开(公告)号：EP2477237A4
公开(公告)日：2015-11-11
申请号：EP10813531
申请日：2010-01-28
发明人： ISHIBASHI KEIJI , YOSHIZUMI YUSUKE
IPC分类号： H01L33/16 , B82Y20/00 , C30B25/20 , C30B29/38 , C30B29/40 , C30B33/04 , H01L33/32 , H01S5/02 , H01S5/028 , H01S5/20 , H01S5/32 , H01S5/343
CPC分类号： C30B33/04 , B82Y20/00 , C30B29/403 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A group III nitride crystal substrate is provided in which, wherein, a plane spacing of arbitrary specific parallel crystal lattice planes of the crystal substrate being obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a main surface (1s) of the crystal substrate while X-ray diffraction conditions of the specific parallel crystal lattice planes of the crystal substrate are satisfied, a uniform distortion at a surface layer of the crystal substrate represented by a value of |d 1 - d 2 |/d 2 obtained from a plane spacing d 1 at the X-ray penetration depth of 0.3 µm and a plane spacing d 2 at the X-ray penetration depth of 5 µm is equal to or lower than 1.9 x 10 -3 , and wherein the main surface (1s) has a plane orientation inclined in the direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes (1c) of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.
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7.发明公开GROUP III NITRIDE SUBSTRATE, SEMICONDUCTOR DEVICE COMPRISING THE SAME, AND METHOD FOR PRODUCING SURFACE-TREATED GROUP III NITRIDE SUBSTRATE 审中-公开III族氮化物衬底，半导体器件及其制造方法表面处理过的III族氮化物衬底
公开(公告)号：EP2377976A4
公开(公告)日：2012-12-12
申请号：EP09838319
申请日：2009-01-19
发明人： ISHIBASHI KEIJI
IPC分类号： C30B29/38
CPC分类号： H01L29/2003 , C30B25/02 , C30B29/403 , C30B29/406
摘要： A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×10 10 atoms/cm 2 to 200×10 10 atoms/cm 2 of a p-type metal element. The group III nitride substrate has a stable surface.
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8.发明公开GROUP III ELEMENT NITRIDE SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, PROCESSES FOR PRODUCING THESE, AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT 审中-公开III族元素氮化物衬底，外延与多层基板，工艺用于生产和用于生产半导体元件的方法
公开(公告)号：EP2080823A4
公开(公告)日：2010-09-29
申请号：EP07829399
申请日：2007-10-09
IPC分类号： C30B29/38 , C30B33/00 , H01L21/205 , H01L21/304 , H01L33/00 , H01L33/16 , H01L33/32
CPC分类号： C30B29/403 , C30B29/406 , C30B33/00 , H01L21/02024 , H01L33/16 , H01L33/32
摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate (1) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×10 14 , and the number of silicon atoms per square centimeter of the surface (3) is not more than 3×10 13 ; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface (3) is not more than 3×10 13 , and a haze level of the surface (3) is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface (3) is not more than 2×10 14 , and a haze level of the surface (3) is not more than 5 ppm.
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9.发明公开GROUP III NITRIDE COMPOSITE SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开GROUP III NITRIDVERBUNDSUBSTRAT，工艺为III族氮化物半导体部件用和方法
公开(公告)号：EP2908330A4
公开(公告)日：2016-06-01
申请号：EP13845267
申请日：2013-09-04
发明人： ISHIBASHI KEIJI , HACHIGO AKIHIRO , HIROMURA YUKI , MATSUMOTO NAOKI , NAKAHATA SEIJI , NAKANISHI FUMITAKE , YANAGISAWA TAKUYA , UEMATSU KOJI , SEKI YUKI , YAMAMOTO YOSHIYUKI , YOSHIZUMI YUSUKE , MIKAMI HIDENORI
IPC分类号： H01L21/02 , H01L21/762 , H01L33/00
CPC分类号： H01L21/76251 , B32B7/02 , B32B7/04 , B32B7/06 , B32B2307/20 , H01L21/76254 , H01L21/76256 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/025 , H01L2924/0002 , Y10T428/24298 , Y10T428/24322 , Y10T428/24331 , Y10T428/2495 , Y10T428/24975 , Y10T428/26 , Y10T428/265 , Y10T428/31 , H01L2924/00
摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate (1) includes a group III nitride film (13) and a support substrate (11) formed from a material different in chemical composition from the group III nitride film (13). The group III nitride film (13) is joined to the support substrate (11) in one of a direct manner and an indirect manner. The group III nitride film (13) has a thickness of 10 µm or more. A sheet resistance of a group III-nitride-film (13)-side main surface (13m) is 200 ©/sq or less. A method for manufacturing the group III nitride composite substrate (1) includes the steps of: bonding the group III nitride film (13) and the support substrate (11) to each other in one of a direct manner and an indirect manner; and reducing the thickness of at least one of the group III nitride film (13) and the support substrate bonded to each other.
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10.发明公开III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMICONDUCTOR DEVICE 审中-公开III族氮化物半导体衬底，表面衬底和半导体器件
公开(公告)号：EP2484818A4
公开(公告)日：2015-02-11
申请号：EP10820228
申请日：2010-07-14
发明人： ISHIBASHI KEIJI
IPC分类号： H01L21/306 , C23C16/34 , C30B29/38 , C30B29/40 , H01L21/205 , H01L33/32
CPC分类号： H01L33/30 , C30B23/025 , C30B25/186 , C30B29/403 , H01L21/02013 , H01L21/02019 , H01L21/02024 , H01L21/02389 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02658 , H01L21/30621 , H01L24/32 , H01L29/2003 , H01L33/025 , H01L33/12 , H01L33/16 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
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