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    Method and apparatus for sputtering thin film of compound having large area
    2.
    发明公开
    Method and apparatus for sputtering thin film of compound having large area 失效
    用于生产具有大面积化合物薄膜的方法和装置

    公开(公告)号：EP0291044A3

    公开(公告)日：1990-05-23

    申请号：EP88107606.1

    申请日：1988-05-11

    申请人： SUMITOMO ELECTRIC INDUSTRIES LIMITED

    发明人： Fujimori, Naoji c/o Itami Works of Sumitomo ,  Harada, Keizo c/o Itami Works of Sumitomo ,  Yazu, Shuji c/o Itami Works of Sumitomo ,  Jodai, Tetsuji c/o Itami Works of Sumitomo

    IPC分类号： C23C14/34 ,  C23C14/08 ,  C23C14/56

    CPC分类号： C23C14/562 ,  C23C14/35 ,  Y10S505/816

    摘要： A thin film of a compound having a large area is continuously produced on a substrate by depositing elements constituting the compound from a target member onto the surface of substrate by spattering comprising steps of:
        rotating a target member having a flat surface around an axis which crosses the surface and comprising elements of the compound so that a part of the surface of target member is positioned at a first spattering position and another part of the target member is positioned at a second spattering position,
        at the first position, spattering at least one target comprising at least one element of the compound which is easily splashed so as to supply the deficient element to the target member, and
        at the second position, spattering the elements from the target member so as to deposit them on the surface of said substrate with continuously supplying the substrate so that a part of the substrate is positioned in a flying line of the elements,
        whereby an elementary composition of the target member at the second position is adjusted at a predetermined composition.

    Method and apparatus for sputtering thin film of compound having large area
    3.
    发明公开
    Method and apparatus for sputtering thin film of compound having large area 失效
    方法和薄膜与通过从化合物溅射的大表面的装置。

    公开(公告)号：EP0291044A2

    公开(公告)日：1988-11-17

    申请号：EP88107606.1

    申请日：1988-05-11

    申请人： SUMITOMO ELECTRIC INDUSTRIES LIMITED

    发明人： Fujimori, Naoji c/o Itami Works of Sumitomo ,  Harada, Keizo c/o Itami Works of Sumitomo ,  Yazu, Shuji c/o Itami Works of Sumitomo ,  Jodai, Tetsuji c/o Itami Works of Sumitomo

    IPC分类号： C23C14/34 ,  C23C14/08 ,  C23C14/56

    CPC分类号： C23C14/562 ,  C23C14/35 ,  Y10S505/816

    摘要： A thin film of a compound having a large area is continuously produced on a substrate by depositing elements constituting the compound from a target member onto the surface of substrate by spattering comprising steps of:
        rotating a target member having a flat surface around an axis which crosses the surface and comprising elements of the compound so that a part of the surface of target member is positioned at a first spattering position and another part of the target member is positioned at a second spattering position,
        at the first position, spattering at least one target comprising at least one element of the compound which is easily splashed so as to supply the deficient element to the target member, and
        at the second position, spattering the elements from the target member so as to deposit them on the surface of said substrate with continuously supplying the substrate so that a part of the substrate is positioned in a flying line of the elements,
        whereby an elementary composition of the target member at the second position is adjusted at a predetermined composition.

    摘要翻译： 旋转的目标部件，其具有平坦表面上轴横跨围绕：的化合物的具有大面积的薄膜连续地在基片通过沉积构成从目标构件的化合物的元素到基材的表面通过溅射的包括步骤制造 的化合物的表面与包含元素所以没有目标部件的表面的一部分在第一溅射位置被定位和目标部件的另一部分在第二溅射位置被定位时，在所述第一位置，溅射至少一个目标 包含所述化合物中的至少一种元素的所有这是很容易飞溅，从而将缺陷元件以提供给所述目标部件，且在所述第二位置，溅射从靶构件的元件，以便他们说的表面上沉积具有连续基板 供给基板所以没基板的一部分被定位在所述元件的飞行路线，从而在元素组成Ô ˚F在第二位置的目标构件在预定的组合物进行调整。