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1.发明公开
公开(公告)号：EP0834196A1
公开(公告)日：1998-04-08
申请号：EP96918175.0
申请日：1996-06-06
CPC分类号： H01L27/11502 , H01L23/53242 , H01L23/53252 , H01L28/55 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A thin-film ferroelectric capacitor (20) includes a bottom electrode structure (26) having an adhesion metal layer (36) and a noble metal portion (38). The electrode (26) is deposited over a thin-film buffer layer (24), which contains a layered superlattice material. The buffer layer is interposed between a substrate (22) and the bottom electrode (26). A process of manufacture includes deposition of a liquid precursor on the substrate (22) prior to formation of the bottom electrode (26).
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2.发明公开INTEGRATED CIRCUITS HAVING MIXED LAYERED SUPERLATTICE MATERIALS AND PRECURSOR SOLUTIONS FOR USE IN A PROCESS OF MAKING THE SAME 失效有使用在这件事上外来的制造混合的层状超级电网材料和印前解决方案集成电路的
公开(公告)号：EP0815586A1
公开(公告)日：1998-01-07
申请号：EP96909700.0
申请日：1996-03-14
CPC分类号： C23C16/448 , C04B35/62227 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/40 , H01L28/55 , H01L28/56 , H01L28/60
摘要： Metal alkoxycarboxylate-based liquid precursor solutions are used form electronic devices (100) that include mixed layered superlattice materials (112) of a type having discrete oxygen octahedral layers (124) and (128) collated with a superlattice-generator layer (116). The precursor solutions include a plurality of metal moieties in effective amounts for yielding the layered superlattice materials. These metal moieties are mixed to include an A/B portion capable of forming an A/B layer (124), a perovskite-like AB layer portion capable of forming a perovskite-like AB octahedral layer (128), and a superlattice-generator portion capable of forming the superlattice-generator layer (116). The precursors are deposited in liquid form upon a substrate and annealed to provide the layered superlattice materials.
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公开(公告)号：EP0770265A1
公开(公告)日：1997-05-02
申请号：EP95926640.0
申请日：1995-07-10
CPC分类号： H01L27/11502 , C04B35/4682 , C04B35/6264 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/1295 , C23C18/14 , C30B7/00 , C30B29/68 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A magnesium doped metal oxide layer in an integrated circuit is made by providing a liquid precursor comprising a first metal, a second metal and magnesium, applying the precursor to a substrate, and treating the precursor to form said magnesium doped metal oxide layer on the substrate. In one embodiment the liquid precursor comprises a mixture of a BST solution and a dopant solution of magnesium carboxylate. The precursor is spun (P45) on the substrate, for example a first electrode, dried (P46) at 400 DEG C for 2 minutes then annealed (P47) at 750 DEG C to 800 DEG C for about an hour to form a BST layer accurately doped with magnesium.
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4.发明公开
公开(公告)号：EP0891631A1
公开(公告)日：1999-01-20
申请号：EP97916016.0
申请日：1997-03-14
发明人： MCMILLAN, Larry, D. , SCOTT, Michael, C. , PAZ DE ARAUJO, Carlos, A. , OTSUKI, Tatsuo , HAYASHI, Shinichiro
CPC分类号： H01L21/316 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1212 , C23C18/1287 , C23C18/14 , C23C26/02 , C30B7/00 , C30B29/68 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L41/316 , H05K3/105
摘要： A precursor liquid comprising silicon in a xylenes solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of silicon dioxide or silicon glass on the substrate. Then an integrated circuit is completed to include at least a portion of the silicon dioxide or silicon glass layer as an insulator for an electronic device in the integrated circuit.
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5.发明公开MISTED PRECURSOR DEPOSITION APPARATUS AND METHOD WITH IMPROVED MIST AND MIST FLOW 失效厂房及VEFAHREN涂料用改进的雾和FOG领导FOG形前体的方式
公开(公告)号：EP0885315A1
公开(公告)日：1998-12-23
申请号：EP97914860.0
申请日：1997-03-04
IPC分类号： B05D1 , B05D3 , B05D7 , C23C8 , C23C16 , C23C18 , C23C26 , C30B7 , H01L21 , H01L27 , H01L39 , H01L41 , H05K3
CPC分类号： H01L21/02197 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C8/10 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/12 , C23C18/1216 , C23C18/1287 , C23C18/14 , C23C26/02 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L41/1871 , H01L41/314 , H05K3/105
摘要： A substrate is located within a deposition chamber, the substrate defining a substrate plane. A barrier plate is disposed in spaced relation above the substrate and substantially parallel thereto, the area of said barrier plate in a plane parallel to said substrate being substantially equal to said area of said substrate in said substrate plane, i.e. within 10% of said substrate area. The barrier plate has a smoothness tolerance of 5% of the average distance between said barrier plate and said substrate. A mist is generated, allowed to settle in a buffer chamber, filtered through a 1 micron filter, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.
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6.发明公开UV RADIATION PROCESS FOR MAKING ELECTRONIC DEVICES HAVING LOW-LEAKAGE-CURRENT AND LOW-POLARIZATION FATIGUE 失效UV辐射工序生产具有低泄漏电流和极化疲劳电子器件
公开(公告)号：EP0815587A1
公开(公告)日：1998-01-07
申请号：EP96911311.0
申请日：1996-03-14
CPC分类号： H01L21/31691 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C30B7/00 , C30B29/68 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A precursor solution formed of a liquid polyoxyalkylated metal complex in as solvent is applied to a substrate in the formation of a metal oxide thin film. The liquid thin film is baked in air to a temperature up to 500 DEG C. while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed at temperature ranging from about 700 DEG C. to 850 DEG C. to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used. The use of UV radiation significantly reduces the leakage current and carbon impurity content of the final metal oxide.
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公开(公告)号：EP1002327A2
公开(公告)日：2000-05-24
申请号：EP99927306.3
申请日：1999-06-07
发明人： KANO, Gota , SHIMADA, Yasuhiro , HAYASHI, Shinichiro , ARITA, Koji , PAZ DE ARAUJO, Carlos, A. , CUCHIARO, Joseph, D. , MCMILLAN, Larry, D.
CPC分类号： G02F1/133603
摘要： A thin film of ferroelectric layered superlattice material in a flat panel display device is energized to selectively influence the display image. In one embodiment, a voltage pulse causes the layered superlattice material to emit electrons that impinge upon a phosphor, causing the phosphor to emit light. In another embodiment, an electric potential creates a remanent polarization in the layered superlattice material, which exerts an electric field in liquid crystal layer, thereby influencing the transmissivity of light through the liquid crystal. The layered superlattice material is a metal oxide formed using an inventive liquid precursor containing an alkoxycarbolyxate. The thin film thickness is preferably in the range of 50-140 nm, so that polarizability and transparency of the thin film is enhanced. A display element may comprise a varistor device to prevent cross-talk between pixels and to enable sudden polarization switching. A functional gradient in the ferroelectric thin film enhances electron emission. Two ferroelectric elements, one on either side of the phosphor may be used to enhance luminescence. A phosphor can be sandwiched between a dielectric and a ferroelectric layer to enhance emission.
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8.发明公开METHOD OF FORMING MAGNESIUM OXIDE FILMS ON GLASS SUBSTRATE FOR USE IN PLASMA DISPLAY PANELS 失效METHOD FOR涂层等离子体显示面板的安装提供了一种用于玻璃基板用氧化镁
公开(公告)号：EP0975556A1
公开(公告)日：2000-02-02
申请号：EP98909128.5
申请日：1998-03-12
发明人： KANO, Gota , PAZ DE ARAUJO, Carlos, A. , ARITA, Koji , SCOTT, Michael, C. , MCMILLAN, Larry, D. , HAYASHI, Shinichiro
CPC分类号： H01J9/20 , C03C17/25 , C03C2217/228 , C03C2218/11 , H01J2209/012 , H01J2211/40
摘要： A new method (P200) is provided for making magnesium oxide layers (122) in plasma displays (100). A magnesium carboxylate liquid precursor solution is applied to a display panel (102), dried, and annealed to yield a solid magnesium oxide layer (122) having excellent electro-optical performance.
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公开(公告)号：EP0925606A1
公开(公告)日：1999-06-30
申请号：EP97936510.0
申请日：1997-08-18
发明人： DERBENWICK, Gary, F. , MCMILLAN, Larry, D. , SOLAYAPPAN, Narayan , SCOTT, Michael, C. , PAZ DE ARAUJO, Carlos, A. , HAYASHI, Shinichiro
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1225
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate (5, 858) is placed within a vacuum deposition chamber (2), a small amount of hexamethyl-disilazane is added to the precursor liquid, is misted, and the mist is flowed into the deposition chamber to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film (506, 860) of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit (600, 850) is completed to include at least a portion of the layered superlattice material film in a component (604, 872) of the integrated circuit.
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10.发明公开LOW TEMPERATURE PROCESS FOR FABRICATING LAYERED SUPERLATTICE MATERIALS AND MAKING ELECTRONIC DEVICES INCLUDING SAME 审中-公开低温工艺用于生产分层的超晶格材料与那些含有电子电路
公开(公告)号：EP1103070A1
公开(公告)日：2001-05-30
申请号：EP99937212.1
申请日：1999-07-07
IPC分类号： H01L21/316
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1295
摘要： A liquid precursor containing thallium is applied to a first electrode (28, 58), RTP baked at a temperature lower than 725 °C, and annealed at the same temperature for a time period from one to five hours to yield a ferroelectric layered superlattice material (30, 60). A second electrode (32, 77) is formed to form a capacitor (16, 72) and a second anneal is performed at a temperature lower than 725 °C. If the material is strontium bismuth thallium tantalate, the precursor contains (m-1) mole-equivalents of strontium for each of (2.2-x) mole-equivalents of bismuth, x mole-equivalents of thallium, and m mole-equivalents of tantalum, where m=2 and 0.0∫x≤2.2.
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