摘要:
Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device comprising the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship.
摘要:
According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels (100), a first gate driver (210), and a signal output unit (230). Each of the light-sensing pixels may include a light sensor transistor (140) configured to sense light, a switch transistor (130) configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film (114) on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.
摘要:
According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels (100), a first gate driver (210), and a signal output unit (230). Each of the light-sensing pixels may include a light sensor transistor (140) configured to sense light, a switch transistor (130) configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film (114) on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.
摘要:
An touchscreen apparatus includes pixel rows including pixels configured to display an image, a touch-sensing unit configured to sense a physical touch and a light-sensing unit configured to sense incident light, the touch-sensing unit and the light-sensing unit being between two adjacent pixel rows and configured to operate based on first and second gate signals, a first sensor gate line (SGLn) connected to the light-sensing unit and the touch-sensing unit and configured to provide the first gate for activating the light-sensing unit and resetting the touch-sensing unit, a second sensor gate line (SGLn+1) connected to both the light-sensing unit and the touch-sensing unit and configured to provide the second gate signal for activating the touch-sensing unit and resetting the light-sensing unit, and a reset circuit configured to provide a common voltage to the pixels based on the operation of at least one of the light-sensing unit and the touch-sensing unit.
摘要:
Optical touch screen apparatuses with remote sensing and touch sensing by using a light sensor transistor including an oxide semiconductor transistor. The optical touch screen apparatus includes a pixel array of a plurality of sensing pixels arranged in a plurality of rows and a plurality of columns. Each of the sensing pixels includes a light sensing pixel for sensing light that is irradiated by an external light source and a touch sensing pixel for sensing display light that is reflected by a screen touch. The light sensing pixel includes a first light sensor transistor and a first switch transistor connected each other in series, and the touch sensing pixel includes a second light sensor transistor and a second switch transistor connected each other in series.
摘要:
An touchscreen apparatus includes pixel rows including pixels configured to display an image, a touch-sensing unit configured to sense a physical touch and a light-sensing unit configured to sense incident light, the touch-sensing unit and the light-sensing unit being between two adjacent pixel rows and configured to operate based on first and second gate signals, a first sensor gate line (SGLn) connected to the light-sensing unit and the touch-sensing unit and configured to provide the first gate for activating the light-sensing unit and resetting the touch-sensing unit, a second sensor gate line (SGLn+1) connected to both the light-sensing unit and the touch-sensing unit and configured to provide the second gate signal for activating the touch-sensing unit and resetting the light-sensing unit, and a reset circuit configured to provide a common voltage to the pixels based on the operation of at least one of the light-sensing unit and the touch-sensing unit.
摘要:
An image sensor (100) includes a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers (110,120,130), a plurality of filter layers (140,150) and a plurality of transparent insulating layers (115). The light-sensing layers may be stacked in one unit pixel region.
摘要:
A magnetic random access memory using magnetic domain drag is provided. The magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer; a data input unit electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output unit electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, the magnetic random access memory has more excellent performance than that using a switching field to record data.
摘要:
A high-density magnetic memory device is provided. The high-density magnetic memory device includes a vertical transistor formed on a substrate; a magnetic memory element formed on the vertical transistor, the magnetic memory element using magnetic materials for storing data; a bit line connected to the transistor via the magnetic memory element; a word line for writing over and across the bit line; and an insulating layer formed between the word line for writing, and the other components below the word line for writing. According to the high-density magnetic memory device, it is possible to fabricate a high-density magnetic memory device with a vertical transistor.