Light-sensing apparatus and method of driving the same
    2.
    发明公开
    Light-sensing apparatus and method of driving the same 审中-公开
    Lichtemessvorrichtung und Ansteuerverfahrendafür

    公开(公告)号:EP2518769A2

    公开(公告)日:2012-10-31

    申请号:EP12160821.0

    申请日:2012-03-22

    IPC分类号: H01L27/146

    摘要: According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels (100), a first gate driver (210), and a signal output unit (230). Each of the light-sensing pixels may include a light sensor transistor (140) configured to sense light, a switch transistor (130) configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film (114) on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.

    摘要翻译: 根据示例实施例,光感测装置可以包括光感测像素阵列(100),第一栅极驱动器(210)和信号输出单元(230)。 每个感光像素可以包括被配置为感测光的光传感器晶体管(140),被配置为输出来自光传感器晶体管的光感测信号的开关晶体管(130)和导电屏蔽膜(114 )在开关晶体管的光入射表面上。 光传感器晶体管和开关晶体管可以具有相同的氧化物半导体晶体管结构。 第一栅极驱动器可以被配置为向每个感光像素提供栅极电压和负的偏置电压。 信号输出单元可以被配置为从每个感光像素接收光感测信号并输出​​数据信号。

    Light-sensing apparatus and method of driving the same

    公开(公告)号:EP2518769B1

    公开(公告)日:2018-10-24

    申请号:EP12160821.0

    申请日:2012-03-22

    IPC分类号: H01L27/146 H01L27/144

    摘要: According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels (100), a first gate driver (210), and a signal output unit (230). Each of the light-sensing pixels may include a light sensor transistor (140) configured to sense light, a switch transistor (130) configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film (114) on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.

    Touch sensing and remote sensing optical touch screen apparatuses
    6.
    发明公开
    Touch sensing and remote sensing optical touch screen apparatuses 审中-公开
    触敏和远程光学触摸屏设备

    公开(公告)号:EP2565756A3

    公开(公告)日:2014-10-29

    申请号:EP12175507.8

    申请日:2012-07-09

    IPC分类号: G06F3/042 G06F3/038

    摘要: Optical touch screen apparatuses with remote sensing and touch sensing by using a light sensor transistor including an oxide semiconductor transistor. The optical touch screen apparatus includes a pixel array of a plurality of sensing pixels arranged in a plurality of rows and a plurality of columns. Each of the sensing pixels includes a light sensing pixel for sensing light that is irradiated by an external light source and a touch sensing pixel for sensing display light that is reflected by a screen touch. The light sensing pixel includes a first light sensor transistor and a first switch transistor connected each other in series, and the touch sensing pixel includes a second light sensor transistor and a second switch transistor connected each other in series.

    Hybrid sensing touchscreen apparatus and method of driving the same
    7.
    发明公开
    Hybrid sensing touchscreen apparatus and method of driving the same 有权
    Hybride Abtast-Berührungsbildschirmvorrichtungund Ansteuerverfahrendafür

    公开(公告)号:EP2750005A2

    公开(公告)日:2014-07-02

    申请号:EP13199558.1

    申请日:2013-12-24

    IPC分类号: G06F3/042

    摘要: An touchscreen apparatus includes pixel rows including pixels configured to display an image, a touch-sensing unit configured to sense a physical touch and a light-sensing unit configured to sense incident light, the touch-sensing unit and the light-sensing unit being between two adjacent pixel rows and configured to operate based on first and second gate signals, a first sensor gate line (SGLn) connected to the light-sensing unit and the touch-sensing unit and configured to provide the first gate for activating the light-sensing unit and resetting the touch-sensing unit, a second sensor gate line (SGLn+1) connected to both the light-sensing unit and the touch-sensing unit and configured to provide the second gate signal for activating the touch-sensing unit and resetting the light-sensing unit, and a reset circuit configured to provide a common voltage to the pixels based on the operation of at least one of the light-sensing unit and the touch-sensing unit.

    摘要翻译: 触摸屏设备包括像素行,其包括被配置为显示图像的像素,被配置为感测物理触摸的触摸感测单元和被配置为感测入射光的感光单元,所述触摸感测单元和所述光感测单元位于 两个相邻像素行并且被配置为基于第一和第二栅极信号操作;第一传感器栅极线(SGLn),连接到光感测单元和触摸感测单元,并且被配置为提供用于激活光感测的第一栅极 单元并且重置所述触摸感测单元,连接到所述光感测单元和所述触摸感测单元的第二传感器栅极线(SGLn + 1),并且被配置为提供用于激活所述触摸感测单元的第二栅极信号和复位 光检测单元和复位电路,其被配置为基于光感测单元和触摸感测单元中的至少一个的操作向像素提供公共电压。

    High-density magnetic random access memory device and method of operating the same
    10.
    发明公开
    High-density magnetic random access memory device and method of operating the same 审中-公开
    Hochdichte magnetische Direktzufriffspeicheranordnung und Verfahren zu deren Betrieb

    公开(公告)号:EP1329895A2

    公开(公告)日:2003-07-23

    申请号:EP02256805.9

    申请日:2002-09-30

    IPC分类号: G11C11/16

    CPC分类号: G11C11/16

    摘要: A high-density magnetic memory device is provided. The high-density magnetic memory device includes a vertical transistor formed on a substrate; a magnetic memory element formed on the vertical transistor, the magnetic memory element using magnetic materials for storing data; a bit line connected to the transistor via the magnetic memory element; a word line for writing over and across the bit line; and an insulating layer formed between the word line for writing, and the other components below the word line for writing. According to the high-density magnetic memory device, it is possible to fabricate a high-density magnetic memory device with a vertical transistor.

    摘要翻译: 提供了一种高密度磁存储器件。 高密度磁存储器件包括形成在衬底上的垂直晶体管; 形成在所述垂直晶体管上的磁存储元件,所述磁存储元件使用用于存储数据的磁性材料; 经由磁存储元件连接到晶体管的位线; 用于写入和跨越位线的字线; 以及形成在用于写入的字线之间的绝缘层,以及用于写入的字线下方的其他部件。 根据高密度磁存储器件,可以制造具有垂直晶体管的高密度磁存储器件。