公开(公告)号：EP3627537A1

公开(公告)日：2020-03-25

申请号：EP19171989.7

申请日：2019-04-30

申请人： Samsung Electronics Co., Ltd.

发明人： HEO, Jinseong ,  LEE, Yunseong ,  JO, Sanghyun ,  SHIN, Keunwook ,  SHIN, Hyeonjin

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L27/11502

摘要： Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp 2 bonding structure.

公开(公告)号：EP3321974A1

公开(公告)日：2018-05-16

申请号：EP17200439.2

申请日：2017-11-07

申请人： Samsung Electronics Co., Ltd.

发明人： JO, Sanghyun ,  LEE, Jaeho ,  LEE, Eunkyu ,  PARK, Seongjun ,  LEE, Kiyoung ,  HEO, Jinseong

IPC分类号： H01L31/0264 ,  H01L31/074

摘要： Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

摘要翻译： 示例实施例涉及被配置为实现高光电转换效率和低暗电流的图像传感器。 图像传感器包括第一和第二电极，设置在第一和第二电极之间的多个光电检测层以及设置在光电检测层之间的中间层。 光检测层将入射光转换成电信号并且包括半导体材料。 中间层包括具有电导率各向异性的金属或半金属材料。

公开(公告)号：EP3876277A1

公开(公告)日：2021-09-08

申请号：EP21156217.8

申请日：2021-02-10

申请人： Samsung Electronics Co., Ltd.

发明人： LEE, Yunseong ,  HEO, Jinseong ,  KIM, Sangwook ,  MOON, Taehwan ,  JO, Sanghyun

IPC分类号： H01L27/1159 ,  H01L27/11592

摘要： Provided is a ferroelectric thin-film structure including a semiconductor substrate, a first ferroelectric layer on the semiconductor substrate, and a second ferroelectric layer on the semiconductor substrate. The second ferroelectric layer is spaced apart from the first ferroelectric layer and has a different dielectric constant from the first ferroelectric layer. The first ferroelectric layer and the second ferroelectric layer may be different from each other in terms of the amount of a dopant contained therein, and may exhibit different threshold voltages when applied to transistors.

公开(公告)号：EP3799130A1

公开(公告)日：2021-03-31

申请号：EP20184502.1

申请日：2020-07-07

申请人： Samsung Electronics Co., Ltd.

发明人： LEE, Yunseong ,  KIM, Sangwook ,  JO, Sanghyun ,  HEO, Jinseong ,  LEE, Hyangsook

IPC分类号： H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L49/02

摘要： A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.

公开(公告)号：EP3614440A1

公开(公告)日：2020-02-26

申请号：EP19192485.1

申请日：2019-08-20

申请人： Samsung Electronics Co., Ltd.

发明人： HEO, Jinseong ,  LEE, Yunseong ,  JO, Sanghyun

IPC分类号： H01L29/66 ,  H01L29/51

摘要： Provided are a logic switching device and a method of manufacturing the same. The logic switching device may include a domain switching layer adjacent to a gate electrode. The domain switching layer may include a ferroelectric material region and an anti-ferroelectric material region. The domain switching layer may be a non-memory element. The logic switching device may include a channel, a source and a drain both connected to the channel, the gate electrode arranged to face the channel, and the domain switching layer provided between the channel and the gate electrode.

公开(公告)号：EP4099395A1

公开(公告)日：2022-12-07

申请号：EP22176154.7

申请日：2022-05-30

申请人： Samsung Electronics Co., Ltd.

发明人： CHOE, Dukhyun ,  HEO, Jinseong ,  MOON, Taehwan ,  JO, Sanghyun

IPC分类号： H01L29/51 ,  H01L29/10 ,  H01L27/11507 ,  H01L49/02 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78

摘要： Provided are a thin film structure, a semiconductor device including the thin film structure, and a semiconductor apparatus including the semiconductor device. The thin film structure includes a substrate, and a ferroelectric layer on the substrate. The ferroelectric layer includes a compound having a fluorite structure, in which a crystal direction is aligned in a normal direction of a substrate, and having an orthorhombic phase and including fluorine. The ferroelectric layer may have ferroelectricity.

公开(公告)号：EP3910687A1

公开(公告)日：2021-11-17

申请号：EP21169674.5

申请日：2021-04-21

申请人： Samsung Electronics Co., Ltd.

发明人： HEO, Jinseong ,  MOON, Taehwan ,  NAM, Seunggeol ,  JO, Sanghyun

IPC分类号： H01L29/51 ,  H01L21/28 ,  G11C11/22

摘要： A thin film structure including ferroelectrics and anti-ferroelectrics and a semiconductor device including the same are provided. The thin film structure includes a first anti-ferroelectric layer comprising anti-ferroelectrics, a second anti-ferroelectric layer disposed apart from the first anti-ferroelectric layer and including anti-ferroelectrics, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric layer and including ferroelectrics.

公开(公告)号：EP3813125A1

公开(公告)日：2021-04-28

申请号：EP20201983.2

申请日：2020-10-15

申请人： Samsung Electronics Co., Ltd.

发明人： JO, Sanghyun ,  LEE, Eunha ,  HEO, Jinseong ,  KIM, Junghwa ,  LEE, Hyangsook ,  NAM, Seunggeol

IPC分类号： H01L29/51

摘要： An electronic device includes a dielectric layer including crystal grains having aligned crystal orientations the dielectric layer may be between a substrate and a gate electrode. The dielectric layer may be between isolated first and second electrodes. A method of manufacturing an electronic device may include preparing a substrate having a channel layer, forming the dielectric layer on the channel layer, and forming a gate electrode on the dielectric layer.

公开(公告)号：EP3490010A1

公开(公告)日：2019-05-29

申请号：EP18171541.8

申请日：2018-05-09

申请人： Samsung Electronics Co., Ltd.

发明人： JO, Sanghyun ,  LEE, Jaeho ,  KIM, Haeryong ,  SHIN, Hyeonjin

IPC分类号： H01L31/107 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0352 ,  H01L27/146 ,  H01L31/101

摘要： An avalanche photodetector (10) having a small form factor, effective dark current suppression and a high detection efficiency with respect to both visible light and infrared rays may include a first electrode(11), a collector layer (12) on the first electrode, a tunnel barrier layer (13) on the collector layer, a graphene layer (14) on the tunnel barrier layer, an emitter layer (15) on the graphene layer, and a second electrode (16) on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：EP3799131A1

公开(公告)日：2021-03-31

申请号：EP20197678.4

申请日：2020-09-23

申请人： Samsung Electronics Co., Ltd.

发明人： HEO, Jinseong ,  KIM, Sangwook ,  LEE, Yunseong ,  JO, Sanghyun

IPC分类号： H01L29/51 ,  H01L29/49 ,  H01L29/78 ,  H01L21/28

摘要： A domain switching device (100) includes a channel region (CH), a source region (SR) and a drain region (DR) connected to the channel region, a gate electrode (GA) isolated from contact with the channel region, an anti-ferroelectric layer (140) between the channel region and the gate electrode, a conductive layer (150) between the gate electrode and the anti-ferroelectric layer to contact the anti-ferroelectric layer, and a barrier layer (130) between the anti-ferroelectric layer and the channel region.