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公开(公告)号：EP3926071A1
公开(公告)日：2021-12-22
申请号：EP21176278.6
申请日：2021-05-27
IPC分类号： C23C16/04 , C23C16/40 , C23C16/455 , C23C16/56
摘要： A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer by adsorbing a reaction inhibitor onto a side wall of the gap, forming a first precursor layer by adsorbing a first reactant onto the bottom of the gap and the side wall of the gap around the bottom of the gap, and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap. The reaction inhibitor includes a precursor material that does not react with a second reactant. The first reaction inhibition layer may have a density gradient in which a density of the reaction inhibitor decreases toward a bottom of the gap. The forming the first atomic layer includes adsorbing the second reactant onto the first precursor layer.
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公开(公告)号：EP3949512A1
公开(公告)日：2022-02-09
申请号：EP20851868.8
申请日：2020-08-14
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公开(公告)号：EP4389930A3
公开(公告)日：2024-08-14
申请号：EP23216580.3
申请日：2023-12-14
发明人： CHO, Eunhyoung , LEE, Sunghee , LEE, Jeongyub , LEE, Hanboram
CPC分类号： H01L21/28562 , H01L21/0228 , H01L21/76831 , C23C16/04 , C23C16/18 , C23C16/34 , C23C16/45534 , C23C16/45553 , C23C16/0272 , C23C16/56 , H01L21/76849 , H01L21/76861 , H01L21/76879 , H01L21/76843
摘要： A method of selectively forming a layer according to atomic layer deposition includes providing a substrate which includes a first region consisting of a first material and having a first surface and a second region consisting of a second material and having a second surface, forming a first reaction inhibition layer on the second surface using a reaction inhibitor selectively adsorbed on the second surface, selectively forming a first deposition layer on the first surface using a first precursor and a first reactant, wherein the first reactant reacts with the first precursor to form an atomic layer and does not react with the reaction inhibitor to form the atomic layer, and converting the first reaction inhibition layer on the second surface into a second deposition layer using a second reactant which reacts with the first reaction inhibition layer to form the atomic layer.
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公开(公告)号：EP4310444A1
公开(公告)日：2024-01-24
申请号：EP23184723.7
申请日：2023-07-11
发明人： KIM, QHwan , KIM, Jaeyoon , NOH, Hyeonkyun , MA, Ami , LEE, Sunghee , CHANG, Kyubaik , CHEON, Wooyoung , JEONG, Jaehoon
摘要： A method for measuring a structure based on a spectrum, includes obtaining a first model that includes a first sub-model and a second sub-model following the first sub-model and is trained based on simulation data, generating a second model including a third sub-model identical to the first sub-model, training the second model based on sample spectrum data generated by measuring spectra of sample structures, and estimating, based on the trained second model, the structure from measured spectrum data generated by measuring a spectrum of the structure.
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公开(公告)号：EP4389930A2
公开(公告)日：2024-06-26
申请号：EP23216580.3
申请日：2023-12-14
发明人： CHO, Eunhyoung , LEE, Sunghee , LEE, Jeongyub , LEE, Hanboram
CPC分类号： H01L21/28562 , H01L21/0228 , H01L21/76831 , C23C16/04 , C23C16/18 , C23C16/34 , C23C16/45534 , C23C16/45553 , C23C16/0272 , C23C16/56
摘要： A method of selectively forming a layer according to atomic layer deposition includes providing a substrate which includes a first region consisting of a first material and having a first surface and a second region consisting of a second material and having a second surface, forming a first reaction inhibition layer on the second surface using a reaction inhibitor selectively adsorbed on the second surface, selectively forming a first deposition layer on the first surface using a first precursor and a first reactant, wherein the first reactant reacts with the first precursor to form an atomic layer and does not react with the reaction inhibitor to form the atomic layer, and converting the first reaction inhibition layer on the second surface into a second deposition layer using a second reactant which reacts with the first reaction inhibition layer to form the atomic layer.
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公开(公告)号：EP4348975A1
公开(公告)日：2024-04-10
申请号：EP22861729.6
申请日：2022-08-25
发明人： KANAGARATHINAM, Madhan Raj , CHOUDHARY, Gunjan Kumar , LEE, Sunghee , JAYASEELAN, Sujith Rengan , PALACHARLA, Sri Vinod , GUPTA, Mritunjay , RAYAVARAPU, Ratnakar Rao Venkata , RAO, Prakash , PALANIAPPAN, Ramanathan , SABAREESH, Siva , KOVVURI, Jayendra Reddy , GOLI, Mohan Rao
IPC分类号： H04L47/80 , H04L47/2475 , H04L47/263
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公开(公告)号：EP3016431A1
公开(公告)日：2016-05-04
申请号：EP14818540.8
申请日：2014-06-26
发明人： CHOI, Jongmu , LEE, Sunghee , KIM, Changsoon
CPC分类号： H04L1/1867 , H04L1/1685 , H04L1/1825 , H04L2001/0093 , H04W84/20
摘要： The present invention relates to a method, a device, and a system for supporting data communication which can ensure data transmission and channel efficiency having high reliability among a plurality of electronic devices that constitute a network. The data communication method of an electronic device, according to one embodiment of the present invention, comprises the steps of: selecting a leader among other electronic devices within a network; transmitting data to the other electronic devices within the network; determining whether an acknowledgement (ACK) corresponding to the data transmission is received from an electronic device selected as the leader; and retransmitting the data depending on whether the acknowledgement (ACK) is received, or waiting for the next data transmission.
摘要翻译： 支持数据通信的方法，设备和系统技术领域本发明涉及一种用于支持数据通信的方法，设备和系统，其能够确保构成网络的多个电子设备之中具有高可靠性的数据传输和信道效率。 根据本发明的一个实施例的电子设备的数据通信方法包括以下步骤：选择网络内的其他电子设备中的领导者; 将数据传输到网络内的其他电子设备; 确定是否从被选为领导者的电子装置接收到对应于数据传输的确认（ACK）; 并根据是否接收到确认（ACK）或等待下一个数据传输来重传数据。
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