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公开(公告)号：EP3420591A1
公开(公告)日：2019-01-02
申请号：EP17708646.9
申请日：2017-02-21
发明人： LU, Zhenyu , YU, Jixin , ALSMEIER, Johann , TOYAMA, Fumiaki , MIZUTANI, Yuki , OGAWA, Hiroyuki , GE, Chun , MAO, Daxin , ZHANG, Yanli , CHU, Alexander , LI, Yan
IPC分类号： H01L27/1158 , H01L29/66 , H01L29/792 , H01L27/1157 , H01L27/11575 , H01L27/11573 , H01L27/11582
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2.发明公开
公开(公告)号：EP3686930A1
公开(公告)日：2020-07-29
申请号：EP20162735.3
申请日：2017-11-28
IPC分类号： H01L27/11565 , H01L27/1157 , H01L27/11582
摘要： Memory stack structures can be formed through an alternating stack of insulating layers and spacer material layers that are formed as, or are subsequently replaced with, electrically conductive layers. The memory stack structures can be formed as rows having a first pitch. Additional insulating layers and at least one drain select level dielectric layer are formed over the alternating stack. Drain select level openings are formed in rows having a smaller second pitch. Partial replacement of the at least one drain select level dielectric layer forms spaced apart electrically conductive line structures that surround a respective plurality of drain select level openings. Drain select level channel portions are subsequently formed in respective drain select level openings.
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3.发明公开
公开(公告)号：EP3602628A1
公开(公告)日：2020-02-05
申请号：EP17817496.7
申请日：2017-11-28
IPC分类号： H01L27/11565 , H01L27/1157 , H01L27/11582
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4.发明公开
公开(公告)号：EP3262680A2
公开(公告)日：2018-01-03
申请号：EP16732828.5
申请日：2016-06-09
发明人： NISHIKAWA, Masatoshi , HONMA, Ryoichi , MIWA, Toru , MATSUMOTO, Masahide , MIZUTANI, Yuki , KOKETSU, Hiroaki , ALSMEIER, Johann
IPC分类号： H01L23/522 , H01L23/64 , H01L27/115 , H01L49/02
CPC分类号： H01L28/91 , H01L27/0629 , H01L27/11573 , H01L27/11575
摘要： A three dimensional memory device includes a memory device region containing a plurality of non-volatile memory devices, a peripheral device region containing active driver circuit devices, and a stepped surface region between the peripheral device region and the memory device region containing a plurality of passive driver circuit devices.
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公开(公告)号：EP3262680B1
公开(公告)日：2019-08-21
申请号：EP16732828.5
申请日：2016-06-09
发明人： NISHIKAWA, Masatoshi , HONMA, Ryoichi , MIWA, Toru , MATSUMOTO, Masahide , MIZUTANI, Yuki , KOKETSU, Hiroaki , ALSMEIER, Johann
IPC分类号： H01L23/522 , H01L23/64 , H01L27/115 , H01L49/02
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