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    Metallic contacts to compound semiconductor devices
    1.
    发明公开
    Metallic contacts to compound semiconductor devices 失效
    Metallische KontaktefürMischhalbleiteranordnungen。

    公开(公告)号：EP0045644A2

    公开(公告)日：1982-02-10

    申请号：EP81303521.9

    申请日：1981-07-31

    申请人： Santa Barbara Research Center

    发明人： Cockrum, Charles A. ,  Chia, Joan K. ,  Kreider, James F.

    IPC分类号： H01L29/40

    CPC分类号： H01L21/02186 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/28575 ,  H01L21/31679 ,  H01L21/31687 ,  H01L21/443 ,  H01L21/469 ,  H01L23/53209 ,  H01L29/45 ,  H01L29/452 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Metallic contacts to compound semiconductor devices which employ a native oxide for passivation are provided. The metallic contacts of the invention comprise at least two metal layers: a first layer making non-rectifying contact with the semiconductor surface and providing a diffusion barrier and a second layer thereon comprising an easily oxidizable metal. A low resistivity metal layer may optionally be interposed between the two metal layers for improved conductivity.
    The metallic contact is formed prior to passivation. The diffusion barrier layer prevents diffusion of potentially deleterious materials into the semiconductor, while exposed portions of the oxidizable metal form an insulating oxide during anodic passivation in an electrolyte. The insulating oxide prevents disruption of the electric field distribution in the electrolyte, thereby eliminating passivating oxide and device non-uniformities commonly encountered in the formation of prior art metallic contacts and providing more uniform semiconductor oxide thickness.

    摘要翻译： 提供了使用钝化的自然氧化物的化合物半导体器件的金属接触。 本发明的金属触点包括至少两个金属层：与半导体表面进行非整流接触并提供扩散阻挡层的第一层和在其上的包含易氧化金属的第二层。 可以可选地在两个金属层之间插入低电阻率金属层，以改善导电性。 在钝化之前形成金属接触。 扩散阻挡层防止潜在的有害材料扩散到半导体中，而在电解质中的阳极钝化期间，可氧化金属的暴露部分形成绝缘氧化物。 绝缘氧化物防止电解质中的电场分布的破坏，从而消除在现有技术的金属触点的形成中通常遇到的钝化氧化物和器件不均匀性，并提供更均匀的半导体氧化物厚度。

    Photoresponsive device and method for fabricating the same, including composition grading and recessed contacts for trapping minority carriers
    2.
    发明公开
    Photoresponsive device and method for fabricating the same, including composition grading and recessed contacts for trapping minority carriers 失效
    具有掩埋触点Zusammenstellungsgradiente和少数载流子和它们的制备方法的定影光敏器件。

    公开(公告)号：EP0541973A1

    公开(公告)日：1993-05-19

    申请号：EP92117409.0

    申请日：1992-10-12

    申请人： Santa Barbara Research Center

    发明人： Huang, Chao ,  Kosai, Kenneth ,  Chia, Joan K.

    IPC分类号： H01L31/103 ,  H01L31/109 ,  H01L31/0296

    CPC分类号： H01L31/1832 ,  H01L31/02966 ,  H01L31/09 ,  H01L31/1032

    摘要： A mercury-cadmium-telluride (HgCdTe) photoresponsive layer (14) having the composition Hg 1-x Cd x Te is formed on a substrate (12) such that x increases from the surface (14a) of the photoresponsive layer (14) toward the substrate (12). This causes the bandgap in the photoresponsive layer (14) to increase from the surface (14a) toward the substrate (12), thereby urging minority carriers which are photogenerated in the photoresponsive layer (14) to move toward and be trapped at the surface (14a). Laterally spaced first and second ohmic contacts (16,18) are electrically connected to the photoresponsive layer (14) at a predetermined distance (z c ) below the surface (14a) such that the photogenerated minority carriers trapped at the surface (14a) are urged away from the contacts (16,18) by the increasing bandgap. An electrically floating photoresponsive layer (24) of opposite conductivity type may be formed between the substrate (12) and the photoresponsive layer (14) to form a Heterojunction Interface Trap.

    摘要翻译： 具有的Hg1-X CDX Te为在基板上形成的组合物（12）测试的汞 - 镉 - 碲化物（碲镉汞）光敏层（14）没有从朝向基板上的光敏层（14）的表面（14a）的x增加（12 ）。 这导致光响应层（14）的带隙，以从表面（14a）的朝向基板（12），从而促使少数载流子哪些是光生在光敏层（14）提高到朝向移动并在表面处被捕获（ 14A）。 横向间隔开的第一和第二欧姆接触（16,18）在低于所述表面（14a）的预定距离（ZC）被电连接到所述光响应性层（14）检查确实捕获在表面（14a）的光生少数载流子被推动 远离触点（16,18）通过增加带隙。 相反导电类型的电浮动光敏层（24）也可以在基片（12）和光响应层（14），以形成异质结界面陷阱之间形成。