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公开(公告)号：EP1538675A1
公开(公告)日：2005-06-08
申请号：EP02788677.9
申请日：2002-11-28
IPC分类号： H01L27/095 , H01L29/812
CPC分类号： H01L29/812 , H01L27/0248 , H01L27/0255 , H01L29/808
摘要： A protecting element, comprising a first n+-type region, an insulating region, and a second n+-type region, is connected in parallel between two terminals of an FET. Since discharge across the first and second n+ regions is enabled, electrostatic energy that reaches the operating region of the FET can be attenuated without increasing the parasitic capacitance.
摘要翻译： 包括第一n +型区域，绝缘区域和第二n +型区域的保护元件并联连接在FET的两个端子之间。 由于跨越第一和第二n +区的放电被启用，到达FET工作区的静电能量可被衰减而不增加寄生电容。
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公开(公告)号：EP1538673A1
公开(公告)日：2005-06-08
申请号：EP03794280.2
申请日：2003-09-08
IPC分类号： H01L27/04 , H01L29/861 , H01L29/80 , H01L29/72
CPC分类号： H01L27/0255 , H01L24/48 , H01L27/0248 , H01L27/0288 , H01L29/66098 , H01L29/80 , H01L29/812 , H01L29/861 , H01L2924/00014 , H01L2224/45099 , H01L2224/85399 , H01L2224/05599
摘要： With a microwave FET, an incorporated Schottky junction capacitance or PN junction capacitance is small and such a junction is weak against static electricity. However, with a microwave device, the method of connecting a protecting diode cannot be used since this method increases the parasitic capacitance and causes degradation of the high-frequency characteristics. In order to solve the above problems, a protecting element, having a first n + -type region - insulating region - second n + -type region arrangement is connected in parallel between two terminals of a protected element having a PN junction, Schottky junction, or capacitor. Since discharge can be performed between the first and second n + regions that are adjacent each other, electrostatic energy that would reach the operating region of an FET can be attenuated without increasing the parasitic capacitance.
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