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公开(公告)号：EP0971465B1
公开(公告)日：2004-05-26
申请号：EP98910983.0
申请日：1998-03-25
发明人： TAKATANI, Kunihiro
CPC分类号： B82Y20/00 , H01S5/2211 , H01S5/2214 , H01S5/2218 , H01S5/2231 , H01S5/32341 , H01S5/34333
摘要： A compound semiconductor laser made of a III nitride semiconductor, comprising a first clad layer (104) of first conductivity type on a substrate (101), an active layer (106) on the first clad layer, a second clad layer (108) of second conductivity type on the active layer (106), and a buried layer (110) formed on the second clad layer (108) and having an aperture for constricting a current into a selected region in the active layer. The second clad layer (108) has a ridge portion on an upper part thereof, and the ridge portion is located inside the aperture of the buried layer (110). The buried layer (110) does not substantially absorb a light emitted from the active layer (106) and has a refractive index of substantially the same as that of the second clad layer (108).
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公开(公告)号：EP1120872B1
公开(公告)日：2006-12-20
申请号：EP99943254.5
申请日：1999-09-09
CPC分类号： B82Y20/00 , H01S5/0021 , H01S5/2004 , H01S5/2086 , H01S5/2205 , H01S5/2206 , H01S5/221 , H01S5/2218 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/3216 , H01S5/32325 , H01S5/32341 , H01S5/34333
摘要： An InGaAl semiconductor laser comprising a first layer of first conductivity type, an active layer whose forbidden band width is narrower than that of the first layer, and a second layer of second conductivity type whose forbidden band width is wider than that of the active layer, wherein the second layer has a planar portion and a stripelike projection structure, a stripelike optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripelike projection structure, a current-constricting layer of the first conductivity type or of a high resistance covering the top of the planar portion of the second layer, the side of the projection structure of the second layer, and the side of the optical waveguide is formed, and the difference between the thermal expansion coefficient of the current constricting layer and that of the second layer is in the range of -4x10-9/°C to +4x10-9/°C.
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公开(公告)号：EP0971465A1
公开(公告)日：2000-01-12
申请号：EP98910983.0
申请日：1998-03-25
发明人： TAKATANI, Kunihiro
IPC分类号： H01S3/18
CPC分类号： B82Y20/00 , H01S5/2211 , H01S5/2214 , H01S5/2218 , H01S5/2231 , H01S5/32341 , H01S5/34333
摘要： A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layer 104 of a first conduction type formed on a substrate 101 , an active layer 106 formed on the first cladding layer, a second cladding layer 108 of a second conduction type formed on the active layer 106 , and a buried layer 110 formed on the second cladding layer 108 , the buried layer having an opening portion for constricting a current in a selected region of the active layer, wherein an upper portion of the second cladding layer 108 has a ridge portion, the ridge portion residing in the opening portion of the buried layer 110 , and the buried layer 110 does not substantially absorb light output from the active layer 106 , and the buried layer has a refractive index which is approximately identical with that of the second cladding layer 108 .
摘要翻译： 本发明的III族氮化物半导体的化合物半导体激光器包括形成在基板101上的第一导电类型的第一包覆层104，形成在第一包层上的有源层106，第二包覆层108 形成在有源层106上的导电类型以及形成在第二覆层108上的掩埋层110，该掩埋层具有用于限制有源层的选定区域中的电流的开口部分，其中第二覆层 层108具有脊部，脊部位于掩埋层110的开口部分中，并且掩埋层110基本上不吸收从有源层106输出的光，并且掩埋层具有大致相同的折射率 与第二包层108相同
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公开(公告)号：EP1120872A1
公开(公告)日：2001-08-01
申请号：EP99943254.5
申请日：1999-09-09
CPC分类号： B82Y20/00 , H01S5/0021 , H01S5/2004 , H01S5/2086 , H01S5/2205 , H01S5/2206 , H01S5/221 , H01S5/2218 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/3216 , H01S5/32325 , H01S5/32341 , H01S5/34333
摘要： An InGaAlN-based semiconductor laser device, comprising a first layer of a first conductivity type, an active layer having a smaller forbidden band than that of the first layer, and a second layer of a second conductivity type having a larger forbidden band than that of the active layer. The second layer includes a flat region and a stripe-shaped projecting structure. A stripe-shaped optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripe-shaped projecting structure. A current-constricting layer of the first conductivity type or of a high resistance is formed for covering a top surface of the flat region of the second layer, a side surface of the projecting structure of the second layer, and a side surface of the optical waveguide forming layer. A difference between a thermal expansion coefficient of the current-constricting layer and a thermal expansion coefficient of the second layer is in the range of -4 × 10 -9 /°C to +4 x 10 -9 /°C.
摘要翻译： 一种InGaAlN基半导体激光器件，包括第一导电类型的第一层，具有比第一层的禁带更小的禁带的活性层以及具有比第一层的禁带更大的禁带的第二导电类型的第二层， 活动层。 第二层包括平坦区域和条形突出结构。 在条形突出结构上形成折射率大于第二层的第二导电类型的条形光波导形成层。 形成第一导电类型或高电阻的电流狭窄层，用于覆盖第二层的平坦区域的顶表面，第二层的凸起结构的侧表面以及光学元件的侧表面 波导形成层。 电流狭窄层的热膨胀系数与第二层的热膨胀系数之间的差值在-4×10 -9 /℃至+ 4×10 -9 /℃的范围内。
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