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公开(公告)号：EP1284037B1
公开(公告)日：2007-04-18
申请号：EP00990571.2
申请日：2000-12-22
发明人： GRUBER, Stefan , HEERLEIN, Jörg , UNGER, Peter
IPC分类号： H01S5/223
CPC分类号： H01S5/227 , H01S5/0655 , H01S5/2063 , H01S5/2205 , H01S5/2215 , H01S5/2218 , H01S5/2219 , H01S5/2231
摘要： The invention concerns a stripe laser diode element exhibiting longitudinal direction of propagation in the main direction of propagation of a laser light and having contacts in longitudinal direction of propagation on one surface with the purpose of impressing a current on the element. The surface in defined by edges crosswise to the longitudinal direction. An absorption region is formed in the area of said edges.
摘要翻译： 本发明涉及一种条状激光二极管元件，其在激光的主传播方向上展现纵向传播并且在一个表面上具有沿纵向传播的接触，目的是在元件上施加电流。 表面由与纵向方向交叉的边缘限定。 吸收区域形成在所述边缘的区域中。
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公开(公告)号：EP1744419A3
公开(公告)日：2007-04-04
申请号：EP06023105.7
申请日：1998-03-25
发明人： Takatani, Kunihiro
CPC分类号： B82Y20/00 , H01S5/2211 , H01S5/2214 , H01S5/2218 , H01S5/2231 , H01S5/32341 , H01S5/34333
摘要： A compound semiconductor laser, comprises a first cladding layer (104) of a III group nitride semiconductor farmed on a substrate (101), an active layer (106) of a III group nitride semiconductor formed on the first cladding layer (104), a second cladding layer (108) of a III group nitride semiconductor formed on the active layer (105), said second cladding layer (108) having a projecting portion on an upper surface side, and a ridge structure of a III group nitride semiconductor, a portion of said ridge structure being said projecting portion of the second cladding layer (108). The projecting portion of the second cladding layer (108) is interposed by a buried layer (110) which does not substantially absorb light output from the active layer.
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3.发明公开High-powered semiconductor laser array apparatus 审中-公开Hochleistungsvielfachhalbleiterlaservorrichtung
公开(公告)号：EP1146617A3
公开(公告)日：2003-04-23
申请号：EP01303078.8
申请日：2001-03-30
CPC分类号： H01S5/4068 , A61B18/20 , A61F9/008 , A61F9/00802 , A61F9/00825 , A61F2009/00863 , A61F2009/00872 , H01S5/005 , H01S5/2218 , H01S5/4025 , H01S5/405 , H01S5/4062
摘要： A semiconductor laser array apparatus, comprising: a first laser array structure which includes a plurality of first laser oscillation units arranged side by side at an interval, and a first current blocking material filling a space between each pair of adjacent laser oscillation units and, a second laser array structure which includes a plurality of second laser array structure arranged side by side at an interval and a second current blocking material filling a space between each pair of adjacent second laser oscillation units. Here, laser beams from the activated first and second laser array structures leak to the outside of those laser array structure so as to form first and second distribution regions of the laser beams respectively, and the first and second laser array structures are close to each other so that the first and second distribution regions contact or overlap with each other.
摘要翻译： 一种半导体激光器阵列装置，包括：第一激光器阵列结构，其包括以一定间隔并排布置的多个第一激光振荡单元和填充每对相邻激光振荡单元之间的空间的第一电流阻挡材料， 第二激光器阵列结构，其包括以间隔并排布置的多个第二激光器阵列结构，以及填充每对相邻的第二激光振荡单元之间的空间的第二电流阻挡材料。 这里，来自激活的第一和第二激光器阵列结构的激光束分别泄漏到那些激光阵列结构的外部，以分别形成激光束的第一和第二分布区域，并且第一和第二激光器阵列结构彼此靠近 使得第一和第二分配区域彼此接触或重叠。
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公开(公告)号：EP1139527A3
公开(公告)日：2003-04-23
申请号：EP01302803.0
申请日：2001-03-27
发明人： Yuri, Masaaki , Tamai, Seiichiro , Ito, Kunio , Kazumura, Masaru
CPC分类号： A61B18/20 , A61F9/008 , A61F9/00802 , A61F9/00825 , A61F2009/00863 , A61F2009/00872 , H01S5/005 , H01S5/2218 , H01S5/4025 , H01S5/405 , H01S5/4062 , H01S5/4068
摘要： A semiconductor laser array apparatus including: a substrate; a plurality of current blocking elements that are stripe shaped and are formed on the substrate; and a plurality of light waveguides that are formed between the plurality of current blocking elements, where at least two adjacent light waveguides are optically connected by removing a part of each current blocking element therebetween.
摘要翻译： 一种半导体激光器阵列装置，包括：衬底; 多个电流阻挡元件，所述多个电流阻挡元件呈条形并形成在所述衬底上; 以及形成在所述多个电流阻挡元件之间的多个光波导，其中通过去除其间的每个电流阻挡元件的一部分来光学连接至少两个相邻的光波导。
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5.发明公开High power single mode laser and method of fabrication 有权Hochleistungseinzelmodelaser和Herstellungsverfahren
公开(公告)号：EP1168541A3
公开(公告)日：2003-03-26
申请号：EP01401531.7
申请日：2001-06-13
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/0655 , H01S5/2036 , H01S5/2218
摘要： A semiconductor laser having a single transverse mode operation. Optical power higher than that generated by conventional pump lasers is achieved by widening the gain medium without inducing the second transverse mode. This is accomplished by providing a small refractive index difference between active and blocking regions of the laser. The refractive index difference between the laser active region material and the laser blocking region material at the fundamental frequency is less than about 0.029.
摘要翻译： 具有单横模操作的半导体激光器。 高于常规泵浦激光器产生的光功率通过在不引起第二横向模式的情况下扩大增益介质来实现。 这是通过在激光器的有源和阻挡区域之间提供小的折射率差来实现的。 激光有源区材料与激光阻挡区域材料之间在基频处的折射率差小于约0.029。
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公开(公告)号：EP0971465A1
公开(公告)日：2000-01-12
申请号：EP98910983.0
申请日：1998-03-25
发明人： TAKATANI, Kunihiro
IPC分类号： H01S3/18
CPC分类号： B82Y20/00 , H01S5/2211 , H01S5/2214 , H01S5/2218 , H01S5/2231 , H01S5/32341 , H01S5/34333
摘要： A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layer 104 of a first conduction type formed on a substrate 101 , an active layer 106 formed on the first cladding layer, a second cladding layer 108 of a second conduction type formed on the active layer 106 , and a buried layer 110 formed on the second cladding layer 108 , the buried layer having an opening portion for constricting a current in a selected region of the active layer, wherein an upper portion of the second cladding layer 108 has a ridge portion, the ridge portion residing in the opening portion of the buried layer 110 , and the buried layer 110 does not substantially absorb light output from the active layer 106 , and the buried layer has a refractive index which is approximately identical with that of the second cladding layer 108 .
摘要翻译： 本发明的III族氮化物半导体的化合物半导体激光器包括形成在基板101上的第一导电类型的第一包覆层104，形成在第一包层上的有源层106，第二包覆层108 形成在有源层106上的导电类型以及形成在第二覆层108上的掩埋层110，该掩埋层具有用于限制有源层的选定区域中的电流的开口部分，其中第二覆层 层108具有脊部，脊部位于掩埋层110的开口部分中，并且掩埋层110基本上不吸收从有源层106输出的光，并且掩埋层具有大致相同的折射率 与第二包层108相同
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公开(公告)号：EP3206239A1
公开(公告)日：2017-08-16
申请号：EP17157898.2
申请日：2008-08-27
CPC分类号： H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00
摘要： Die Erfindung betrifft einen Strahlung emittierenden Halbleiterchip (1), der eine aktive Zone (2) zur Erzeugung von Strahlung der Wellenlänge Lambda und einen strukturierten Bereich (3) mit unregelmäßig angeordneten Strukturelementen aufweist, die ein erstes Material mit einem ersten Brechungsindex n 1 enthalten und die von einem Medium umgeben sind, das ein zweites Material mit einem zweiten Brechungsindex n 2 aufweist, wobei die Dicke einer Zwischenschicht, welche die Strukturelemente und das Medium aufweist, einer maximalen Höhe der Strukturelemente entspricht, wobei für einen effektiven Brechungsindex neff der Zwischenschicht n2
摘要翻译： 本发明涉及一种发射辐射的半导体芯片（1）具有用于产生波长为λ的辐射，并且结构化的区域的活性区域（2）（3）与不规则地排列，其包括具有第一折射率n1和所述第一种材料的结构元件 通过具有第二折射率n2，其特征在于，中间层的厚度，其具有的结构元件和所述介质，所述结构元件的最大高度对应，第二材料的介质所包围，其中用于中间层内夫N2 <纳夫<的有效折射率 n1，并且其中相应结构元件的基面宽度g小于相应结构元件的高度h。 此外，指定了用于制造这种半导体芯片的方法。
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公开(公告)号：EP2031717A2
公开(公告)日：2009-03-04
申请号：EP08004855.6
申请日：2008-03-14
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/22 , H01S5/2214 , H01S5/2218 , H01S2301/18
摘要： A semiconductor light emitting element includes a first clad layer (14) of a first conductivity type provided on a substrate (10); an active layer (18) provided on the first clad layer (14); a second clad layer (26) of a second conductivity type provided on the active layer (18), an upper portion of the second clad layer (26) implements a ridge (32) extending in a predetermined direction; a pair of first current block layers (4) provided on the second clad layer (26) sandwiching the ridge (32) along the extending direction; and a pair of second current block layers (6) provided between the first current block layers (4) on the second clad layer (26) and at sidewalls of the ridge to be contacted with the first current block layers, sandwiching selectively a region including an edge of the ridge (32), the second current block layers (6) having a refractive index larger than the first current block layers (4) at an emission peak wavelength of the active layer (18).
摘要翻译： 半导体发光元件包括设置在基板（10）上的第一导电类型的第一覆盖层（14）; 设置在所述第一覆盖层（14）上的有源层（18）; 设置在有源层（18）上的第二导电类型的第二覆盖层（26），第二覆盖层（26）的上部实现沿预定方向延伸的脊（32）; 一对第一电流阻挡层（4），设置在所述第二覆盖层（26）上，沿所述延伸方向夹住所述脊（32）; 以及一对第二电流阻挡层（6），设置在所述第二覆盖层（26）上的所述第一电流阻挡层（4）之间并且与所述脊的侧壁处于与所述第一电流阻挡层接触的选择性地包括包括 所述脊（32）的边缘，所述第二电流阻挡层（6）在所述有源层（18）的发射峰值波长处具有大于所述第一电流阻挡层（4）的折射率。
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公开(公告)号：EP1437809A1
公开(公告)日：2004-07-14
申请号：EP04009210.8
申请日：1998-03-25
发明人： Takatani, Kunihiro
CPC分类号： B82Y20/00 , H01S5/2211 , H01S5/2214 , H01S5/2218 , H01S5/2231 , H01S5/32341 , H01S5/34333
摘要： A compound semiconductor laser, comprises a first cladding layer (104) of a III group nitride semiconductor formed on a substrate (101), an active layer (106) of a III group nitride semiconductor formed on the first cladding layer (104), a second cladding layer (108) of a III group nitride semiconductor formed on the active layer (106), said second cladding layer (108) having a projecting portion on an upper surface side, and a ridge structure of a III group nitride semiconductor, a portion of said ridge structure being said projecting portion of the second cladding layer (108). The projecting portion of the second cladding layer (108) is interposed by a buried layer (110) which does not substantially absorb light output from the active layer.
摘要翻译： 激光由III族氮化物半导体构成，其具有在基板（101）上的第一导电类型的第一覆盖层（104），在第一覆盖层上的有源层（106），第二导电性的第二覆盖层（108） 在所述有源层上形成的掩模层和形成在所述第二覆盖层上的掩埋层（11），所述掩埋层具有将所述电流限制在所述有源层中的选定区域中的孔径。 第二覆层具有位于掩埋层的孔内的脊，其中掩埋层基本上不吸收从有源层发射的光，其折射率基本上与第二层的折射率相同。
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公开(公告)号：EP1130721A3
公开(公告)日：2003-03-05
申请号：EP00126499.3
申请日：2000-12-08
发明人： Kasukawa, Akihiko, The Furukawa Electric Co., Ltd. , Yokozeki, Mikihiro, The Furukawa Electric Co.,Ltd.
IPC分类号： H01S5/223
CPC分类号： H01S5/223 , H01S5/2206 , H01S5/2218 , H01S5/222 , H01S5/2227 , H01S5/2228
摘要： A self-aligned type semiconductor laser device which is capable of oscillation at high optical output, scarcely develops COMD, and maintains high reliability for a long term. The SAS type semiconductor laser device has an active layer, and a low refractive-index layer formed close the active layer and functioning also as a current blocking layer. The low refractive-index layer includes a plurality of compound semiconductor layers made of Al x Ga 1-x As (0 ≤ x ≤ 1), and the compound semiconductor layers have refractive indices thereof set such that the refractive index lowers with increasing distance from the active layer. Specifically, the low refractive-index layer includes a plurality of AlGaAs layers, and the AlGaAs layers have contents of Al thereof set such that the content of Al increases with increasing distance from the active layer.
摘要翻译： 能够在高光输出下振荡的自对准型半导体激光器件几乎不发展COMD，并且长期保持高可靠性。 SAS型半导体激光器件具有有源层和靠近有源层形成并且还用作电流阻挡层的低折射率层。 低折射率层包括由Al x Ga 1-x As（0≤x≤1）制成的多个化合物半导体层，并且化合物半导体层具有这样的折射率，其设定为使得折射率随着离活性层的距离增加而降低。 具体而言，低折射率层包括多个AlGaAs层，并且AlGaAs层的Al含量被设定为使得Al的含量随着与有源层的距离增加而增加。
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