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    METHOD OF MANUFACTURING RADIATION DETECTOR, RADIATION DETECTOR, AND RADIOGRAPHIC DEVICE
    2.
    发明公开
    METHOD OF MANUFACTURING RADIATION DETECTOR, RADIATION DETECTOR, AND RADIOGRAPHIC DEVICE 有权
    用于生产的射线探测器，辐射探测器和影像学设备

    公开(公告)号：EP2416177A1

    公开(公告)日：2012-02-08

    申请号：EP09842579.6

    申请日：2009-04-03

    申请人： Shimadzu Corporation ,  Institute of National Colleges of Technology, Japan

    发明人： TOKUDA, Satoshi ,  OKAMOTO, Tamotsu ,  KISHIHARA, Hiroyuki ,  KAINO, Masatomo ,  YOSHIMUTA, Toshinori ,  TANABE, Koichi

    IPC分类号： G01T1/24 ,  H01L31/09

    CPC分类号： G01T1/24 ,  H01L31/115

    摘要： According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1ppmwt to 3ppmwt inclusive, and Zn concentration set to 1mol% to 5mol% inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.

    摘要翻译： 。根据放射线检测器制造方法，放射线检测器和本发明的放射线摄像装置，CL-掺杂CdZnTe被用于转化层，有Cl浓度设定为1ppmwt到3ppmwt以下，且Zn浓度设定为1摩尔％〜5摩尔％ 包容性。 这可以形成用于辐射探测器优化转换层。 因此，可以提供的辐射检测器的制造方法，放射线检测器和X射线照相装置，其能够保护被C掺杂晶界的缺陷等级以适当的浓度，并能进一步维持到辐射一体灵敏度，同时降低漏电流， 通过锌掺杂以适当的浓度。

    RADIATION DETECTOR
    4.
    发明公开
    RADIATION DETECTOR 有权
    辐射探测器

    公开(公告)号：EP2333584A1

    公开(公告)日：2011-06-15

    申请号：EP08810383.3

    申请日：2008-09-10

    申请人： Shimadzu Corporation

    发明人： FURUI, Shingo ,  YOSHIMUTA, Toshinori ,  SUZUKI, Junichi ,  WATADANI, Koji ,  MORITA, Satoru

    IPC分类号： G01T1/24 ,  H01L27/14

    CPC分类号： G01T1/244 ,  H01L27/14618 ,  H01L27/14676 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer.

    摘要翻译： 本发明的放射线检测器具有覆盖辐射敏感半导体层，载流子选择性高电阻膜和公共电极的暴露表面的可固化合成树脂膜，其中在制造工艺中使用不允许氯化物混入的材料 可固化合成树脂膜。 这防止了载流子选择性高电阻膜和半导体层中的氯离子形成针孔和空隙。 另外，也可以在共用电极的露出面与固化性合成树脂膜之间设置不透过离子性材料的保护膜，由此防止载体选择性高电阻膜被固化性合成树脂膜中含有的氯离子腐蚀 并且防止流过半导体层的暗电流增加。

    RADIATION DETECTOR AND METHOD FOR PRODUCING SAME
    6.
    发明公开
    RADIATION DETECTOR AND METHOD FOR PRODUCING SAME 审中-公开
    维多利亚州ZE SEINER HERSTELLUNG的STRAHLUNGSDETEKTOR

    公开(公告)号：EP2557597A1

    公开(公告)日：2013-02-13

    申请号：EP11765179.4

    申请日：2011-02-21

    申请人： Shimadzu Corporation

    发明人： YOSHIMUTA, Toshinori ,  TOKUDA, Satoshi ,  TANABE, Koichi ,  KISHIHARA, Hiroyuki ,  KAINO, Masatomo ,  YOSHIMATSU, Akina ,  SATO, Toshiyuki ,  KUWABARA, Shoji

    IPC分类号： H01L27/14 ,  G01T1/24 ,  H01L27/146

    CPC分类号： H01L31/0236 ,  H01L27/14636 ,  Y02E10/50

    摘要： A graphite substrate 11 is processed to have surface unevenness in a range of 1µm to 8µm. Thereby, a semiconductor film 13 to be laminated on the graphite substrate 11 has a stable film quality, and thus adhesion of the graphite substrate 11 and the semiconductor layer 13 can be enhanced. When an electron blocking layer 12 is interposed between the graphite substrate 11 and the semiconductor layer 13, the electron blocking layer 12 is thin and thus the surface unevenness of the graphite substrate 11 is transferred onto the electron blocking layer 12. Consequently, the electron blocking layer 12 also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer 13 is directly connected to the graphite substrate 11 can be produced.

    摘要翻译： 石墨基板11被加工成具有在1μm至8μm范围内的表面凹凸。 因此，层叠在石墨基板11上的半导体膜13具有稳定的膜质量，从而可以提高石墨基板11和半导体层13的粘附性。 当在石墨基板11和半导体层13之间插入电子阻挡层12时，电子阻挡层12薄，因此石墨基板11的表面不平度被转移到电子阻挡层12上。因此，电子阻挡 层12也具有大致在这样的范围内的表面凹凸。 因此，可以制造与将半导体层13直接连接到石墨基板11的结构几乎相同的效果。

    RADIATION DETECTOR, AND RADIATION IMAGING DEVICE PROVIDED WITH SAME
    7.
    发明公开
    RADIATION DETECTOR, AND RADIATION IMAGING DEVICE PROVIDED WITH SAME 审中-公开
    STRAHLUNGSDETEKTOR UNDSTRAHLUNGSABBILDUNGSGERÄTDAMIT

    公开(公告)号：EP2416178A1

    公开(公告)日：2012-02-08

    申请号：EP10758231.4

    申请日：2010-03-26

    申请人： Shimadzu Corporation

    发明人： FURUI, Shingo ,  YOSHIMUTA, Toshinori ,  SUZUKI, Junichi ,  WATADANI, Koji ,  MORITA, Satoru

    IPC分类号： G01T1/24 ,  H01L27/14 ,  H01L31/0248 ,  H01L31/09

    CPC分类号： H01L27/14676 ,  G01T1/244 ,  H01L31/085

    摘要： The construction of this invention includes an active matrix substrate 4, an amorphous selenium layer 1, a high resistance layer 3, a gold electrode layer 2, an insulating layer 5 and an auxiliary plate 6 laminated in this order. In Embodiment 1, the insulating layer 5 has an inorganic anion exchanger added thereto in order to provide a radiation detector which prevents void formation and pinhole formation in the amorphous semiconductor layer and carrier selective high resistance film 3, without accumulating electric charges on the auxiliary plate 6. The inorganic anion exchanger adsorbs chloride ions in the insulating layer 5, thereby preventing destruction of X-ray detector 10 due to the chloride ions drawn to the gold electrode layer 2.

    摘要翻译： 本发明的结构包括按顺序层叠的有源矩阵基板4，非晶硒层1，高电阻层3，金电极层2，绝缘层5和辅助板6。 在实施例1中，绝缘层5具有无机阴离子交换器，以提供防止非晶半导体层和载体选择性高电阻膜3中的空隙形成和针孔形成的放射线检测器，而不在辅助板上积累电荷 无机阴离子交换剂吸附绝缘层5中的氯离子，从而防止由于氯离子被吸引到金电极层2而导致的X射线检测器10的破坏。

    RADIATION IMAGING DEVICE
    9.
    发明公开
    RADIATION IMAGING DEVICE 审中-公开

    公开(公告)号：EP3473183A1

    公开(公告)日：2019-04-24

    申请号：EP17812955.7

    申请日：2017-03-15

    申请人： Shimadzu Corporation

    发明人： TANABE, Koichi ,  YOSHIMUTA, Toshinori ,  KIMURA, Kenji ,  KISHIHARA, Hiroyuki ,  WADA, Yukihisa ,  IZUMI, Takuro ,  SHIRAI, Taro ,  DOKI, Takahiro ,  SANO, Satoshi ,  HORIBA, Akira

    IPC分类号： A61B6/00 ,  G01N23/04

    摘要： Provided is a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject. According to the present invention, it is possible to provide a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject immediately before. That is, the apparatus of the present invention is provided with a phase grating 5 provided with a subject area and a reference area. Both areas each have a predetermined pattern that absorbs radiation, but the patterns are different from each other. In this area, an image of the phase grating 5 is observed in a moire pattern of a long period. This moire image of a long period changes in the positions due to the minute change in the relative position between the phase grating 5 and the absorption grating 6, so it becomes possible to detect the minute change of the relative position between the radiation source, the phase grating 5, and the absorption grating 6 from the image of the reference area.