摘要:
Ferroic circuit elements that include a set of conductive structures that are at least partially embedded within a ferroic medium are disclosed. The ferroic medium may be a voltage switched dielectric material that includes ferroic particles in accordance with various embodiments. A ferroic circuit element may be at least partially embedded within a substrate in accordance with embodiments of the current invention as an embedded ferroic circuit element. An embedded ferroic circuit element that is an inductor in accordance with embodiments of the current invention may be denoted as an embedded ferroic inductor. An embedded ferroic circuit element that is a capacitor in accordance with embodiments of the current invention may be denoted as an embedded ferroic capacitor.
摘要:
Various aspects provide for structures and devices to protect against spurious electrical events (e.g., electrostatic discharge). Some embodiments incorporate a voltage switchable dielectric material (VSDM) bridging a gap between two conductive pads. Normally insulating, the VSDM may conduct current from one pad to the other during a spurious electrical event (e.g,. shunting current to ground). Some aspects include gaps having a gap width that is greater than 50% of a spacing between electrical leads connected to the pads. Some devices include single layers of VSDM. Some devices include multiple layers of VSDM. Various devices may be designed to increase a ratio of active volume (of VSDM) to inactive volume.
摘要:
Embodiments disclosed herein generally relate to structures, methods and devices employing a voltage switchable dielectric material to achieve vertical and/or dual switching protection against ESD and other overvoltage events.
摘要:
Printed circuit boards including voltage switchable dielectric materials (VSDM) are disclosed. The VSDMs are used to protect electronic components, arranged on or embedded in printed circuit boards, against electric discharges, such as electrostatic discharges or electric overstresses. During an overvoltage event, a VSDM layer shunts excess currents to ground, thereby preventing electronic components from destruction or damage.
摘要:
A substrate device includes an embedded layer of VSD material (230) that overlays a conductive element or layer (240) to provide a ground. An electrode (210), connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.