公开(公告)号：EP2257979A1

公开(公告)日：2010-12-08

申请号：EP09724188.9

申请日：2009-03-26

申请人： Shocking Technologies Inc

发明人： FLEMING, Robert ,  KOSOWSKY, Lex ,  SHI, Ning ,  WU, Junjun

IPC分类号： H01L27/02 ,  H01B1/20

CPC分类号： H01B1/22 ,  H01L23/60 ,  H01L27/0248 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A composition is provided that includes a polymer binder, and one or more classes of particle constituents. At least one class of particle constituents includes semiconductive particles that individually have a band gap that is no greater than 2 eV. As VSD material, the composition is (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of said voltage that exceeds the characteristic voltage level.

公开(公告)号：EP2191043A1

公开(公告)日：2010-06-02

申请号：EP08798196.5

申请日：2008-08-19

申请人： Shocking Technologies Inc

发明人： KOSOWSKY, Lex ,  FLEMING, Robert ,  WU, Junjun

IPC分类号： C25B9/00 ,  G06F19/00

CPC分类号： H01C7/1013 ,  B82Y10/00 ,  H01C7/105 ,  H05K1/0257 ,  H05K1/0259 ,  H05K1/0373 ,  H05K1/167 ,  H05K2201/0218 ,  H05K2201/0248 ,  H05K2201/026 ,  H05K2201/0738 ,  H05K2203/105

摘要： Embodiments described herein provide for a composition of voltage switchable dielectric (VSD) material that includes a concentration of modified high-aspect ratio (HAR) particles. In an embodiment, at least a portion of the concentration includes HAR particles are surface-modified to provide core-shell HAR particles. As an alternative or addition, a portion of the concentration includes HAR particles that are surface-modified to have activated surfaces.

公开(公告)号：EP2084748A2

公开(公告)日：2009-08-05

申请号：EP07838813.9

申请日：2007-09-24

申请人： Shocking Technologies Inc

发明人： KOSOWSKY, Lex ,  FLEMING, Robert

IPC分类号： H01L29/12

CPC分类号： H01L21/02118 ,  B82Y30/00 ,  H01C7/12 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/312 ,  H01L21/3148 ,  H01L21/318 ,  Y10S438/90

摘要： Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive materials are selected to have different bandgap energies in order to provide the voltage switchable dielectric material with a stepped voltage response. The semiconductive materials can comprise inorganic particles, organic particles, or an organic material that is soluble in, or miscible with, the dielectric matrix material. Formulations optionally can also include electrically conductive materials. At least one of the conductive or semiconductive materials in a formulation can comprise particles characterized by an aspect ratio of at least 3 or greater.

公开(公告)号：EP2758992A2

公开(公告)日：2014-07-30

申请号：EP12834081.7

申请日：2012-09-21

申请人： Shocking Technologies Inc

发明人： FLEMING, Robert ,  GLICKMAN, Michael ,  GRAYDON, Bhret ,  WU, Junjun ,  VASQUEZ, Daniel

IPC分类号： H01L27/04

CPC分类号： H01L27/0288 ,  H01L23/5252 ,  H01L23/60 ,  H01L2924/0002 ,  H05K1/0257 ,  H05K1/0259 ,  H05K1/16 ,  H05K2201/0738 ,  H01L2924/00

摘要： Embodiments disclosed herein generally relate to structures, methods and devices employing a voltage switchable dielectric material to achieve vertical and/or dual switching protection against ESD and other overvoltage events.

公开(公告)号：EP2540147A1

公开(公告)日：2013-01-02

申请号：EP11748214.1

申请日：2011-02-26

申请人： Shocking Technologies Inc

发明人： KOSOWSKY, Lex ,  FLEMING, Robert ,  GRAYDON, Bhret ,  VASQUEZ, Daniel

IPC分类号： H05K1/09

CPC分类号： H05K1/0254 ,  H05K1/0259 ,  H05K1/181 ,  H05K2201/0738 ,  H05K2203/304

摘要： Printed circuit boards including voltage switchable dielectric materials (VSDM) are disclosed. The VSDMs are used to protect electronic components, arranged on or embedded in printed circuit boards, against electric discharges, such as electrostatic discharges or electric overstresses. During an overvoltage event, a VSDM layer shunts excess currents to ground, thereby preventing electronic components from destruction or damage.

公开(公告)号：EP2277364A1

公开(公告)日：2011-01-26

申请号：EP09732672.2

申请日：2009-04-13

申请人： Shocking Technologies Inc

发明人： KOSOWSKY, Lex ,  FLEMING, Robert ,  GRAYDON, Bhret

IPC分类号： H05K1/02

CPC分类号： H05K1/0257 ,  H05K1/0259 ,  H05K1/0373 ,  H05K2201/0738 ,  H05K2203/105

摘要： A substrate device includes an embedded layer of VSD material (230) that overlays a conductive element or layer (240) to provide a ground. An electrode (210), connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.

公开(公告)号：EP2171622A1

公开(公告)日：2010-04-07

申请号：EP07843113.7

申请日：2007-09-25

申请人： Shocking Technologies, Inc.

发明人： KOSOWSKY, Lex ,  FLEMING, Robert

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  H05K1/0254 ,  H05K1/0259 ,  H05K1/0293 ,  H05K1/0373 ,  H05K3/0005 ,  H05K2201/0738 ,  H05K2203/105

摘要： A substrate device is designed by identifying one or more criteria for handling of a transient electrical event on the substrate device. The one or more criteria may be based at least in part on an input provided from a designer. From the one or more criteria, one or more characteristics may be determined for integrating VSD material as a layer within or on at least a portion of the substrate device. The layer of VSD material may be positioned to protect one or more components of the substrate from the transient electrical condition.

公开(公告)号：EP2067145A2

公开(公告)日：2009-06-10

申请号：EP07843088.1

申请日：2007-09-24

申请人： Shocking Technologies, Inc.

发明人： KOSOWSKY, Lex ,  FLEMING, Robert

IPC分类号： H01B1/24 ,  H01B1/22 ,  C23C18/16 ,  C25D5/54 ,  C25D5/02 ,  C25D5/10

CPC分类号： C25D5/02 ,  C23C18/02 ,  C23C18/14 ,  C25D5/10 ,  C25D5/18 ,  C25D5/48 ,  C25D5/54 ,  H05K3/188 ,  H05K3/423 ,  H05K2203/105 ,  H05K2203/107 ,  H05K2203/1136

摘要： An electroplating process is performed using a substrate that includes a thickness of voltage switchable dielectric (VSD) material having photoactive components that are dispersed, mixed or dissolved in a binder of the VSD material. A pattern of conductive elements may be formed on the substrate by switching the VSD material from a dielectric state to a conductive state using, in part, voltage generated by directing light onto the thickness and VSD material.

公开(公告)号：EP2054897A1

公开(公告)日：2009-05-06

申请号：EP07813509.2

申请日：2007-07-29

申请人： Shocking Technologies, Inc.

发明人： KOSOWSKY, Lex ,  FLEMING, Robert

IPC分类号： H01B1/24 ,  H01B1/22

CPC分类号： H01B1/24 ,  H01L51/0037 ,  H01L51/0081

摘要： A composition of voltage switchable dielectric (VSD) material that utilizes semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material.

公开(公告)号：EP2577716A1

公开(公告)日：2013-04-10

申请号：EP11787284.6

申请日：2011-05-24

申请人： Shocking Technologies Inc

发明人： FLEMING, Robert ,  GRAYDON, Bhret ,  VASQUEZ, Daniel ,  WU, Junjun ,  RAZAVI, Farhad

IPC分类号： H01L21/28

CPC分类号： H01L28/10 ,  H01L45/00

摘要： Ferroic circuit elements that include a set of conductive structures that are at least partially embedded within a ferroic medium are disclosed. The ferroic medium may be a voltage switched dielectric material that includes ferroic particles in accordance with various embodiments. A ferroic circuit element may be at least partially embedded within a substrate in accordance with embodiments of the current invention as an embedded ferroic circuit element. An embedded ferroic circuit element that is an inductor in accordance with embodiments of the current invention may be denoted as an embedded ferroic inductor. An embedded ferroic circuit element that is a capacitor in accordance with embodiments of the current invention may be denoted as an embedded ferroic capacitor.