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    RADICAL GAS GENERATION SYSTEM
    2.
    发明授权
    RADICAL GAS GENERATION SYSTEM 有权

    公开(公告)号：EP3193566B1

    公开(公告)日：2018-12-05

    申请号：EP14898292.9

    申请日：2014-10-29

    申请人： Toshiba Mitsubishi-Electric Industrial Systems Corporation

    发明人： WATANABE Kensuke ,  TABATA Yoichiro ,  NISHIMURA Shinichi

    IPC分类号： H05H1/24 ,  H01J37/32 ,  H01L21/31 ,  C23C16/50

    CPC分类号： C23C16/513 ,  C23C16/50 ,  H01J37/32348 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/31 ,  H05H1/2406

    摘要： The present invention has an object to provide, as a film formation process system of remote plasma type, a radical gas generation system in which a process can be performed evenly on, for example, a target object having a large area through the use of a radical gas. In a radical gas generation system (500) according to the present invention, a process chamber apparatus (200) includes a table (201) that causes a target object (202) to rotate. A radical gas generator (100) includes a plurality of discharge cells (70). Each of the plurality of discharge cells (70) includes an opening (102). The opening (102) is connected to the inside of the process chamber apparatus (200) and faces the target object (202). Through the opening (102), a radical gas (G2) is output. Of the plurality of discharge cells (70), a discharge cell (70) located farther from a center position of the rotation of the target object (202) in a plan view includes a larger facing surface area that is a region in which a first electrode member (1) and a second electrode member (31) face each other.

    PLASMA CHEMICAL VAPOR DEPOSITION DEVICE
    6.
    发明授权
    PLASMA CHEMICAL VAPOR DEPOSITION DEVICE 有权
    等离子体化学气相沉积装置

    公开(公告)号：EP3109891B1

    公开(公告)日：2018-05-09

    申请号：EP16176269.5

    申请日：2016-06-24

    申请人： Toyota Jidosha Kabushiki Kaisha

    发明人： SATO, Yoji ,  SATO, Takayasu ,  NAKATA, Hiromichi ,  TACHIBANA, Kazutaka ,  ARIYADA, Osamu ,  TAKANO, Yuji ,  TSURUMOTO, Ryo

    IPC分类号： H01J37/32

    CPC分类号： C23C16/513 ,  C23C16/455 ,  H01J37/32211 ,  H01J37/32311 ,  H01J37/32577

    摘要： A plasma chemical vapor deposition device includes a chamber (12), a first conductor (20) having an elongated shape, a second conductor (30) having a tubular shape, a high-frequency output device (45), and a direct-current power supply (46). A first connecting portion (23) of the first conductor (20) with the high-frequency output device (45) and a second connecting portion (24) of the first conductor (20) with the direct-current power supply (46) are both placed outside the chamber (12). A distance from one end of the first conductor (20) to the first connecting portion (23) is shorter than a distance from the one end of the first conductor (20) to the second connecting portion (24). An impedance change portion (25) is provided between the first connecting portion (23) and the second connecting portion (24) in the first conductor (20), the impedance change portion having an impedance different from an impedance between the one end of the first conductor (20) and the first connecting portion (23).

    MICROWAVE PLASMA TREATMENT APPARATUS
    7.
    发明公开
    MICROWAVE PLASMA TREATMENT APPARATUS 审中-公开
    微波等离子体处理装置

    公开(公告)号：EP3264866A1

    公开(公告)日：2018-01-03

    申请号：EP16755415.3

    申请日：2016-02-22

    申请人： National Institute of Advanced Industrial Science and Technology

    发明人： KIM Jaeho ,  SAKAKITA Hajime

    IPC分类号： H05H1/24 ,  B01J19/08 ,  C23C16/455 ,  C23C16/511 ,  C23C16/513 ,  H05H1/46

    CPC分类号： H05H1/36 ,  B01J19/08 ,  B01J19/126 ,  C23C16/455 ,  C23C16/45578 ,  C23C16/511 ,  C23C16/513 ,  H05H1/46 ,  H05H2001/4607

    摘要： [Problem] To provide a microwave plasma treatment apparatus that is not provided with complicated, long gas flow paths inside a dielectric substrate, to stabilize generation and retention of a plasma, and can generate a highly uniform, high-density, stable low-temperature plasma not only at low atmospheric pressures but also at middle atmospheric pressures and high atmospheric pressures.
    [Solution] In a micro plasma treatment apparatus including a dielectric substrate, a microwave introducing section, a microstrip line, an earth conductor, a gas inlet, a plasma generating section, and a nozzle for blowing out a plasma, the gas inlet is provided at the earth conductor or the microstrip line, and the gas inlet is provided with a diameter preferably smaller than a cut-off wavelength determined depending on a cross-section of the gas inlet, to prevent leakage of a microwave.

    摘要翻译： 本发明的目的在于提供一种微波等离子体处理装置，其在电介质基板的内部不具有复杂且长的气体流路，能够稳定等离子体的生成和保持，并且能够产生高度均匀且高密度且稳定的低温 等离子体不仅在低气压下，而且在中等大气压和高气压下。 解决方案在包括电介质基板，微波导入部，微带线，接地导体，气体导入口，等离子体产生部以及用于吹出等离子体的喷嘴的微小型等离子体处理装置中，具备气体导入口 在接地导体或微带线上，气体入口的直径优选小于根据气体入口的横截面确定的截止波长，以防止微波泄漏。