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1.发明公开
公开(公告)号：EP1914330A1
公开(公告)日：2008-04-23
申请号：EP06766798.0
申请日：2006-06-16
发明人： OHMI, Tadahiro, c/o Tohoku University , SHIRAI, Yasuyuki, c/o Tohoku University , MORINAGA, Hitoshi, c/o Tohoku University , KAWASE, Yasuhiro, c/o Tohoku University , KITANO, Masafumi, c/o Tohoku University , MIZUTANI, Fumikazu, MITSUBISHI CHEMICAL CO. , ISHIKAWA, Makoto, MITSUBISHI CHEMICAL CO. , KISHI, Yukio, c/o NIHON CERATEC CO., LTD.
IPC分类号： C23C28/00 , C23C8/10 , C25D11/08 , C25D11/10 , C25D11/16 , C25D11/18 , H01L21/205 , H01L21/3065
CPC分类号： C23C4/02 , C23C8/80 , C23C28/00 , C23C28/042 , C25D11/02 , C25D11/04 , C25D11/08 , C25D11/10 , C25D11/16 , C25D11/18 , Y10T428/26 , Y10T428/265 , Y10T428/31678
摘要： Multifunction production equipment enabling a plurality of processes in which deposition of reaction products on the inner wall of the processing chamber of equipment for producing a semiconductor or a flat-plate display, metal contamination due to corrosion of the inner wall, or the like, and fluctuation of the process due to discharged gas are suppressed, and a protective film structure for use therein. On the surface of a metal material, a first coating layer having an oxide coating of 1 µ thick or less formed as an underlying layer by direct oxidation of a parent material, and a second coating layer of about 200µm thick are formed. With such an arrangement, corrosion resistance against irradiation with ions or radicals can be imparted to a second layer protective film, and the effect of a protective layer for preventing corrosion of the surface of parent metal caused by diffusing molecules or ions into the second layer protective film can be imparted to the first layer oxide film. Consequently, contamination of the substrate with metals generated from each metal member and the inner surface of the process chamber is reduced, and stripping of the second layer protective film due to lowering in adhesion of the second layer protective film due to corrosion of the interface between the parent material and the second layer protective film can be suppressed.
摘要翻译： 多功能生产设备使得能够在设备上的处理室的内壁的反应产物的哪沉积处理多个用于制造半导体或平板显示器，金属污染由于内壁或类似物的腐蚀，并 由于排出气体的过程中波动被抑制，以及使用的保护膜的结构在其中。 在金属材料的表面，具有在1μ厚或由母材的直接氧化，并为约200微米厚的第二涂层少形成为底层氧化物涂层的第一涂层上形成。 与搜索装置，针对与离子或自由基可赋予第二层保护膜照射的耐腐蚀性，和保护层的用于防止通过扩散的分子或离子注入到第二层保护引起母金属的表面的腐蚀的效果 电影可以被赋予第一层氧化物成膜。 因此，从每个金属部件与处理腔室的内表面生成的金属基片的污染被减少，且第二层保护膜的剥离，由于在第二层保护膜的密合性因之间的界面的腐蚀降低 母体材料和第二层保护膜，可以抑制。
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2.发明授权
公开(公告)号：EP1918427B1
公开(公告)日：2015-08-05
申请号：EP06746158.2
申请日：2006-05-09
发明人： OHMI, Tadahiro, c/o Tohoku University , SHIRAI, Yasuyuki, c/o Tohoku University , MORINAGA, Hitoshi, c/o Tohoku University , KAWASE, Yasuhiro, c/o Tohoku University , KITANO, Masafumi, c/o Tohoku University , MIZUTANI, Fumikazu, c/o MITSUBISHI CHEMICAL CORP. , ISHIKAWA, Makoto, c/o MITSUBISHI CHEMICAL CORP.
IPC分类号： C25D11/04 , C25D11/06 , C25D11/18 , H01L21/3065
CPC分类号： C25D11/06 , C25D11/18 , Y10T428/265
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3.发明公开METAL OXIDE FILM, LAMINATE, METAL MEMBER AND PROCESS FOR PRODUCING THE SAME 有权METALLOXIDFILM，LAMINAT，METALLBAUEMENT UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP1918427A1
公开(公告)日：2008-05-07
申请号：EP06746158.2
申请日：2006-05-09
发明人： OHMI, Tadahiro, c/o Tohoku University , SHIRAI, Yasuyuki, c/o Tohoku University , MORINAGA, Hitoshi, c/o Tohoku University , KAWASE, Yasuhiro, c/o Tohoku University , KITANO, Masafumi, c/o Tohoku University , MIZUTANI, Fumikazu, c/o MITSUBISHI CHEMICAL CORP. , ISHIKAWA, Makoto, c/o MITSUBISHI CHEMICAL CORP.
IPC分类号： C25D11/04 , C25D11/06 , C25D11/18 , H01L21/3065
CPC分类号： C25D11/06 , C25D11/18 , Y10T428/265
摘要： A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm 2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.
摘要翻译： 适用于金属保护的金属氧化膜，主要由铝组成。 金属氧化物膜包括厚度为10nm以上的主要由铝构成的金属的氧化物的膜，并且具有1E18mol / cm 2以下的膜的水分释放率。 此外，提供了一种制造金属氧化物膜的方法，其中主要由铝组成的金属在pH值为4至10的化学溶液中进行阳极氧化，以获得金属氧化物膜。
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4.发明授权PROCESS FOR PRODUCING AN INTERLAYER INSULATING FILM 有权HERSTELLUNGSPROZESSFÜREINEN FILM ZUR隔离ZWISCHEN SCHICHTEN
公开(公告)号：EP1898455B1
公开(公告)日：2013-05-15
申请号：EP06766953.1
申请日：2006-06-20
IPC分类号： H01L21/316 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/312 , H01L23/498 , H01L23/532 , H01L21/02
CPC分类号： H01L23/49894 , H01L21/0212 , H01L21/02274 , H01L21/02329 , H01L21/0234 , H01L21/02362 , H01L21/3127 , H01L21/76835 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
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5.发明公开
公开(公告)号：EP1898455A1
公开(公告)日：2008-03-12
申请号：EP06766953.1
申请日：2006-06-20
IPC分类号： H01L21/316 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522
CPC分类号： H01L23/49894 , H01L21/0212 , H01L21/02274 , H01L21/02329 , H01L21/0234 , H01L21/02362 , H01L21/3127 , H01L21/76835 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： This invention provides an interlayer insulating film for a semiconductor device, which has low permittivity, is free from the evolution of gas such as CFx and SiF 4 and is stable, and a wiring structure comprising the same. In an interlayer insulating film comprising an insulating film provided on a substrate layer, the interlayer insulating film has an effective permittivity of not more than 3. The wiring structure comprises an interlayer insulating film, a contact hole provided in the interlayer insulating film, and a metal filled into the contact hole. The insulating film comprises a first fluorocarbon film provided on the substrate layer and a second fluorocarbon film provided on the first fluorocarbon film.
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