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公开(公告)号：EP2618366A3
公开(公告)日：2014-05-21
申请号：EP13152161.9
申请日：2013-01-22
IPC分类号： H01L21/027 , H01L21/033 , H01L21/311 , H01J37/32
CPC分类号： H01L21/67069 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01J37/32009 , H01J37/32091 , H01J37/32155 , H01J37/32706 , H01J2237/3343 , H01J2237/3348 , H01L21/0271 , H01L21/0332 , H01L21/0337 , H01L21/3065 , H01L21/31138
摘要： An etching method of etching a periodic pattern formed by self-assembling a first polymer and a second polymer of a block copolymer that is capable of being self-assembled includes introducing a gas into a processing chamber; setting a frequency of a high frequency power supply such that a great amount of ion energy is distributed within a range smaller than ion energy for generating an etching yield of the first polymer and equal to or larger than ion energy for generating an etching yield of the second polymer, and supplying the high frequency power into the processing chamber from the high frequency power supply; generating plasma from the gas introduced in the processing chamber by applying the high frequency power; and etching the periodic pattern on a processing target object mounted on a susceptor 16 by using the generated plasma.
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2.发明公开Method and apparatus for recovering pattern on silicon substrate 审中-公开Verfahren und Vorrichtung zur Wiederherstellung eines Musters auf einem Siliciumsubstrat
公开(公告)号：EP2348524A2
公开(公告)日：2011-07-27
申请号：EP11151363.6
申请日：2011-01-19
IPC分类号： H01L21/02
CPC分类号： H01L21/02057
摘要： A method for recovering a shape of patterns, formed on a silicon substrate by etching, by removing foreign substances grown between the patterns is provided. The method includes heating the silicon substrate accommodated in a chamber to a temperature of about 160°C or higher.
摘要翻译： 提供一种通过蚀刻除去在硅衬底上形成的图案形状的方法，通过去除在图案之间生长的异物。 该方法包括将容纳在室中的硅衬底加热至约160℃或更高的温度。
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公开(公告)号：EP2618366B1
公开(公告)日：2019-10-02
申请号：EP13152161.9
申请日：2013-01-22
IPC分类号： H01L21/027 , H01L21/033 , H01L21/311 , H01J37/32 , B82Y10/00 , B82Y40/00
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公开(公告)号：EP2618366A2
公开(公告)日：2013-07-24
申请号：EP13152161.9
申请日：2013-01-22
IPC分类号： H01L21/033 , H01L21/311
CPC分类号： H01L21/67069 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01J37/32009 , H01J37/32091 , H01J37/32155 , H01J37/32706 , H01J2237/3343 , H01J2237/3348 , H01L21/0271 , H01L21/0332 , H01L21/0337 , H01L21/3065 , H01L21/31138
摘要： An etching method of etching a periodic pattern formed by self-assembling a first polymer and a second polymer of a block copolymer that is capable of being self-assembled includes introducing a gas into a processing chamber; setting a frequency of a high frequency power supply such that a great amount of ion energy is distributed within a range smaller than ion energy for generating an etching yield of the first polymer and equal to or larger than ion energy for generating an etching yield of the second polymer, and supplying the high frequency power into the processing chamber from the high frequency power supply; generating plasma from the gas introduced in the processing chamber by applying the high frequency power; and etching the periodic pattern on a processing target object mounted on a susceptor 16 by using the generated plasma.
摘要翻译： 蚀刻通过自组装能够自组装的嵌段共聚物的第一聚合物和第二聚合物形成的周期性图案的蚀刻方法包括将气体引入处理室; 设定高频电源的频率，使得大量的离子能量分布在小于离子能量的范围内，用于产生第一聚合物的蚀刻产量等于或大于用于产生第一聚合物的蚀刻产量的离子能量 第二聚合物，并从高频电源将高频电力供应到处理室; 通过施加高频功率从引入处理室的气体产生等离子体; 以及通过使用所产生的等离子体在安装在基座16上的处理目标物体上蚀刻周期性图案。
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公开(公告)号：EP2348524A3
公开(公告)日：2011-11-09
申请号：EP11151363.6
申请日：2011-01-19
IPC分类号： H01L21/02
CPC分类号： H01L21/02057
摘要： A method for recovering a shape of patterns, formed on a silicon substrate by etching, by removing foreign substances grown between the patterns is provided. The method includes heating the silicon substrate accommodated in a chamber to a temperature of about 160°C or higher.
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