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公开(公告)号：EP2819150A2
公开(公告)日：2014-12-31
申请号：EP14185469.5
申请日：2013-04-12
发明人： Tahara, Shigeru , Nishimura, Eiichi
IPC分类号： H01L21/306 , H01J37/32
CPC分类号： H01L21/0234 , H01J37/32449 , H01L21/02057 , H01L21/0206 , H01L21/3065 , H01L21/67069
摘要： A process of exposing a substrate to oxygen plasma while heating the substrate; and a cycle process, in which the substrate is exposed to an atmosphere of a mixture gas of a hydrogen fluoride gas and an alcohol gas, and a first period during which a total pressure of the mixture gas or a partial pressure of the alcohol gas is set to be a first total pressure or a partial pressure of the alcohol gas and a second period during which the total pressure of the mixture gas or the partial pressure of the alcohol gas is set to be a second total pressure lower than the first total pressure or a partial pressure of the alcohol gas lower than the partial pressure of the alcohol gas are repeated multiple cycles, are performed. In the cycle process, the mixture gas is supplied to the substrate from a region facing the substrate, and a supply amount of the mixture gas per a unit area from a circular first region including a central portion of the substrate is set to be larger than a supply amount of the mixture gas per a unit area from a second region outside the first region.
摘要翻译： 在加热衬底的同时将衬底暴露于氧等离子体的过程; 以及循环处理，其中将基板暴露于氟化氢气体和醇气体的混合气体的气氛中，以及第一时间段，混合气体的总压力或醇气体的分压为 设定为醇气体的第一总压力或分压，以及第二时段，其中混合气体的总压力或醇气体的分压被设定为低于第一总压力的第二总压力 或低于醇气体的分压的醇气体的分压重复多个循环。 在循环处理中，混合气体从面向基板的区域供给到基板，并且从包括基板的中心部分的圆形第一区域的单位面积的混合气体的供给量设定为大于 从第一区域外的第二区域，每单位面积的混合气体的供给量。
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2.发明公开Method and apparatus for recovering pattern on silicon substrate 审中-公开Verfahren und Vorrichtung zur Wiederherstellung eines Musters auf einem Siliciumsubstrat
公开(公告)号：EP2348524A2
公开(公告)日：2011-07-27
申请号：EP11151363.6
申请日：2011-01-19
IPC分类号： H01L21/02
CPC分类号： H01L21/02057
摘要： A method for recovering a shape of patterns, formed on a silicon substrate by etching, by removing foreign substances grown between the patterns is provided. The method includes heating the silicon substrate accommodated in a chamber to a temperature of about 160°C or higher.
摘要翻译： 提供一种通过蚀刻除去在硅衬底上形成的图案形状的方法，通过去除在图案之间生长的异物。 该方法包括将容纳在室中的硅衬底加热至约160℃或更高的温度。
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公开(公告)号：EP2916344B1
公开(公告)日：2019-06-12
申请号：EP15157130.4
申请日：2015-03-02
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公开(公告)号：EP2469582A2
公开(公告)日：2012-06-27
申请号：EP11010198.7
申请日：2011-12-22
发明人： Nishimura, Eiichi
IPC分类号： H01L21/3213 , H01L21/02
CPC分类号： H01L21/02063 , C23F4/00 , H01J37/32091 , H01L21/02068 , H01L21/32136 , H01L21/32138 , H01L21/76805
摘要： There is provided a substrate processing method capable of increasing an etching rate of a copper member without using a halogen gas. A Cu layer 40 having a smoothened surface 50 is obtained, and then, a processing gas produced by adding a methane gas to a hydrogen gas is introduced into an inner space of a processing chamber 15. Plasma is generated from this processing gas. In the inner space of the processing chamber 15, there exist oxygen radicals 52 generated when an oxide layer 42 is etched, and carbon radicals 53 generated from methane. The oxygen radicals 52 and the carbon radicals 53 are compounded to generate an organic acid, and the organic acid makes a reaction with copper atoms of the Cu layer 40. As a result, a complex of the organic acid having the copper atoms is generated, and the generated organic acid complex is vaporized.
摘要翻译： 提供了能够在不使用卤素气体的情况下提高铜构件的蚀刻速度的基板处理方法。 得到具有平滑表面50的Cu层40，然后将通过将甲烷气体加入到氢气中而产生的处理气体被引入处理室15的内部空间。由该处理气体产生等离子体。 在处理室15的内部空间中，当蚀刻氧化物层42时，存在氧自由基52，以及由甲烷产生的碳自由基53。 将氧自由基52和碳基53混合以产生有机酸，并且有机酸与Cu层40的铜原子反应。结果，产生具有铜原子的有机酸的络合物， 产生的有机酸络合物蒸发。
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5.发明公开Manufacturing method of capacitor electrode, manufacturing system of capacitor electrode, and storage medium 审中-公开用于电容器电极的制造方法，对于一个电容器电极和存储介质制造系统
公开(公告)号：EP1928011A3
公开(公告)日：2011-08-03
申请号：EP07023122.0
申请日：2007-11-29
发明人： Nishimura, Eiichi
IPC分类号： H01L21/02 , H01L21/311
CPC分类号： H01L21/31116 , H01L21/67069 , H01L28/91
摘要： A method for manufacturing a capacitor electrode by removing a silicon oxide film on a surface of a substrate, including: transforming the silicon oxide film into a reaction product by supplying a gas containing a halogen element to chemically react with the silicon oxide film while controlling temperature of the substrate to a first process temperature; and removing the silicon oxide film transformed to the reaction product while controlling the temperature of the substrate to a second process temperature higher than the first process temperature. The silicon oxide film is a BPSG film.
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6.发明公开Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods 有权一种衬底的处理方法表面用于基材的清洁，以及用于该方法执行方案
公开(公告)号：EP1696476A3
公开(公告)日：2009-12-09
申请号：EP06003683.7
申请日：2006-02-23
发明人： Nishimura, Eiichi , Orii, Takehiko
IPC分类号： H01L21/306
CPC分类号： H01L21/02063 , G03F7/42 , H01L21/02054 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： A method of surface processing a substrate that enables deposit to be removed from a substrate so as to obtain a clean substrate. A substrate is cleaned with a liquid chemical. A deposit which is formed through the cleaning with liquid chemical is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The deposit that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
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7.发明公开Manufacturing method of capacitor electrode, manufacturing system of capacitor electrode, and storage medium 审中-公开用于电容器电极的制造方法，对于一个电容器电极和存储介质制造系统
公开(公告)号：EP1928011A2
公开(公告)日：2008-06-04
申请号：EP07023122.0
申请日：2007-11-29
发明人： Nishimura, Eiichi
IPC分类号： H01L21/02
CPC分类号： H01L21/31116 , H01L21/67069 , H01L28/91
摘要： A method for manufacturing a capacitor electrode by removing a silicon oxide film on a surface of a substrate, including: transforming the silicon oxide film into a reaction product by supplying a gas containing a halogen element to chemically react with the silicon oxide film while controlling temperature of the substrate to a first process temperature; and removing the silicon oxide film transformed to the reaction product while controlling the temperature of the substrate to a second process temperature higher than the first process temperature. The silicon oxide film is a BPSG film.
摘要翻译： 一种用于通过一个基板的表面上的膜除去氧化硅，包括制造一个电容器电极的方法：通过供给气体包含卤族元素变换所述氧化硅膜，为反应产物以从化学与薄膜同时控制氧化硅的温度下反应 基板到第一处理温度的; 和去除氧化硅膜变换到反应产物中，同时控制基板至第二处理温度比第一处理温度更高的温度。 该氧化硅膜是BPSG成膜。
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公开(公告)号：EP2469582B1
公开(公告)日：2018-02-14
申请号：EP11010198.7
申请日：2011-12-22
发明人： Nishimura, Eiichi
IPC分类号： H01L21/3213 , H01J37/32 , C23F4/00
CPC分类号： H01L21/02063 , C23F4/00 , H01J37/32091 , H01L21/02068 , H01L21/32136 , H01L21/32138 , H01L21/76805
摘要： There is provided a substrate processing method capable of increasing an etching rate of a copper member without using a halogen gas. A Cu layer 40 having a smoothened surface 50 is obtained, and then, a processing gas produced by adding a methane gas to a hydrogen gas is introduced into an inner space of a processing chamber 15. Plasma is generated from this processing gas. In the inner space of the processing chamber 15, there exist oxygen radicals 52 generated when an oxide layer 42 is etched, and carbon radicals 53 generated from methane. The oxygen radicals 52 and the carbon radicals 53 are compounded to generate an organic acid, and the organic acid makes a reaction with copper atoms of the Cu layer 40. As a result, a complex of the organic acid having the copper atoms is generated, and the generated organic acid complex is vaporized.
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公开(公告)号：EP3086358A1
公开(公告)日：2016-10-26
申请号：EP16165943.8
申请日：2016-04-19
发明人： Tahara, Shigeru , Nishimura, Eiichi , Baklanov, Mikhail , Zhang, Liping , de Marneffe, Jean-Francois
IPC分类号： H01L21/311 , H01J37/32
CPC分类号： H01J37/32449 , H01J37/32477 , H01L21/31116
摘要： A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure.
摘要翻译： 提供蚀刻多孔膜的方法。 该方法包括将第一气体供应到等离子体处理装置的处理室中，其中容纳包括多孔膜的被处理物体，并且产生用于蚀刻处理室中的多孔膜的第二气体的等离子体。 第一气体是在物体安装在处理室中的阶段的温度下或者包括处理气体的饱和蒸气压小于或等于133.3Pa的处理气体。 在供给第一气体的步骤中，不产生等离子体，并且供给到处理室中的处理气体的分压设定为饱和蒸气压的20％以上。
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公开(公告)号：EP2863416B1
公开(公告)日：2016-04-13
申请号：EP14188615.0
申请日：2014-10-13
IPC分类号： H01L21/3213 , C23F4/00
CPC分类号： C23F4/00 , H01L21/32136 , H01L21/32139
摘要： Provided is a method of etching a copper layer. The method includes generating plasma of a processing gas within a processing container which accommodates an object to be processed that includes the copper layer and a metal mask formed on the copper layer. The metal mask contains titanium. In addition, the processing gas includes CH 4 gas, oxygen gas, and a noble gas. In an exemplary embodiment, the metal mask may include a layer made of TiN.
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