公开(公告)号：EP1361782A1

公开(公告)日：2003-11-12

申请号：EP02715809.6

申请日：2002-01-18

申请人： TOKYO ELECTRON LIMITED ,  Ando, Makoto ,  Takahashi, Masaharu

发明人： ANDO, Makoto ,  TAKAHASHI, Masaharu ,  ISHII, Nobuo

IPC分类号： H05H1/46 ,  H01L21/3065 ,  H01L21/205 ,  C23C16/505

CPC分类号： H01J37/32192 ,  H01J37/3244

摘要： A plasma device includes a slot antenna (30) for supplying a high frequency electromagnetic field (F) supplied through a feeding part into a processing vessel (11). The feeding part has a cavity (35) for forming a resonator and converting the fed high frequency electromagnetic field (F) into a rotating electromagnetic field and supplying the rotating electromagnetic field to the slot antenna (30).

摘要翻译： 等离子体装置包括用于将通过馈送部分供应的高频电磁场（F）提供到处理容器（11）中的缝隙天线（30）。 馈电部分具有用于形成谐振器的空腔（35），并将馈送的高频电磁场（F）转换成旋转的电磁场，并将旋转的电磁场提供给缝隙天线（30）。

公开(公告)号：EP1096554A1

公开(公告)日：2001-05-02

申请号：EP99923919.7

申请日：1999-06-04

申请人： TOKYO ELECTRON LIMITED ,  Goto, Naohisa ,  Ando, Makoto

发明人： GOTO, Naohisa ,  ANDO, Makoto ,  ISHII, Nobuo

IPC分类号： H01L21/3065

CPC分类号： H01J37/3222 ,  H01J37/32192

摘要： In a plasma processing system, microwaves generated by a microwave generator (86) are guided to a plane antenna (62) to introduce the microwaves, which are attenuated exponentially, into a processing vessel (22) in which an object to be processed (W) is subjected to a plasma process. A microwave absorbing means (96) is disposed in a peripheral portion of the plane antenna (62) to absorb the microwaves propagating from a central portion of the plane antenna and to control the amount of reflected microwave. Thus the amount of the microwaves reflected toward the central portion of the plane antenna (62) by a peripheral portion of the plane antenna (62) is reduced to some extent so that electromagnetic field intensity is distributed uniformly.

摘要翻译： 在等离子体处理系统中，由微波发生器（86）产生的微波被引导到平面天线（62），以将被指数地衰减的微波引入处理容器（22）中，在该处理容器（22）中，待加工物体（W ）进行等离子体处理。 微波吸收装置（96）设置在平面天线（62）的周边部分中，以吸收从平面天线的中心部分传播的微波并控制反射微波的量。 因此，通过平面天线（62）的周边部分朝向平面天线（62）的中心部分反射的微波的量减少到一定程度，使得电磁场强度均匀分布。

公开(公告)号：EP1315201A1

公开(公告)日：2003-05-28

申请号：EP01955560.6

申请日：2001-08-02

申请人： TOKYO ELECTRON LIMITED

发明人： ISHII, Nobuo

IPC分类号： H01L21/3065 ,  H01L21/205 ,  H05H1/46

CPC分类号： H01J37/3222 ,  H01J37/32192

摘要： Guide members (37) extending from the microwave entrance to a ring member (34) are arranged in the direction of propagation of microwave in a radial waveguide. The guide members (37) contribute to prevention of complex electromagnetic mode due to a microwave reflected from the peripheral portion of the radial waveguide. Therefore, a uniform plasma can be produced because the radiation into the process chamber is uniform even not by disposing any electromagnetic absorbing member at the peripheral portion of the radial waveguide. Since the microwave reflected from the peripheral portion of the radial waveguide can be used to produce a plasma if any electromagnetic absorbing member is not disposed, the plasma can be produced efficiently, and excessive heat is not generated.

摘要翻译： 从微波入口延伸到环形构件（34）的引导构件（37）沿径向波导的微波传播方向排列。 引导构件（37）有助于防止由于从径向波导的周边部分反射的微波而引起的复杂电磁模式。 因此，即使不在辐射波导的周边部设置电磁吸收体，因此能够产生均匀的等离子体，因为进入处理室的辐射是均匀的。 由于如果没有设置电磁吸收部件，所以从径向波导的周边部反射的微波可以用于制造等离子体，所以可以有效地制造等离子体，不产生过多的热量。

公开(公告)号：EP1156516A1

公开(公告)日：2001-11-21

申请号：EP99969842.6

申请日：1999-09-29

申请人： TOKYO ELECTRON LIMITED

发明人： IMAHASHI, Issei ,  ISHII, Nobuo ,  KAWAKAMI, Satoru ,  KAWAI, Yoshinobu ,  UEDA, Yoko

IPC分类号： H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/511 ,  H05H1/46

CPC分类号： H01J37/09 ,  H01J37/32192 ,  H01J37/32678

摘要： The present invention aims to decrease reflected waves in a vacuum chamber to suppress standing waves, thereby easily controlling a plasma density so that uniform treatment can be performed. An electromagnetic wave absorber 6 composed of a resistor such as carbon, a dielectric having a large dielectric loss, such as water, or a magnetic material such as ferrite-based ceramic, or a combination of these, is provided on an inner wall surface of a first vacuum chamber 21. Microwaves introduced from a waveguide 25 into the first vacuum chamber 21 via a transmissive window 23 are absorbed to the electromagnetic wave absorber 6 to suppress reflected waves, whereby a plasma density distribution with a nearly planned pattern is easily formed at an ECR point.

摘要翻译： 本发明旨在减少真空室中的反射波以抑制驻波，从而容易地控制等离子体密度，从而可以进行均匀的处理。 由诸如碳的电阻器，诸如水等介电损耗大的电介质或诸如铁氧体基陶瓷的磁性材料或其组合的电磁波吸收器6设置在内壁表面上 第一真空室21.经由透射窗23从波导管25引入第一真空室21的微波被吸收到电磁波吸收体6以抑制反射波，从而容易地形成具有接近计划的图案的等离子体密度分布 一个ECR点。

公开(公告)号：EP1119033A1

公开(公告)日：2001-07-25

申请号：EP99943392.3

申请日：1999-09-17

申请人： TOKYO ELECTRON LIMITED

发明人： ISHII, Nobuo ,  FUKIAGE, Noriaki ,  AKAHORI, Takashi

IPC分类号： H01L21/31 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01J37/32449 ,  C23C16/511 ,  C23C16/515 ,  H01J37/32192

摘要： A gas supply part (51) is provided in a vacuum vessel (2) so as to surround a region facing a wafer (10) so that a process gas is jetted out from the gas supply part (51) toward the wafer (10). Plasma producing microwaves are turned on and off at a frequency of 30 Hz to 500 Hz to be intermittently supplied from a radio-frequency power generating part (6) into the vacuum vessel (2). Thus, the gas remaining on the wafer (10) is replaced with a new process gas while the microwaves are turned on. Thus, the difference in degree of dissociation between the central portion and peripheral portion of the wafer (10) is not so great to uniformly carry out a plasma process.