公开(公告)号：EP2975633A4

公开(公告)日：2016-10-26

申请号：EP14785929

申请日：2014-04-09

申请人： TOKYO ELECTRON LTD

发明人： MORIKITA SHINYA ,  NISHIMURA EIICHI ,  YAMASHITA FUMIKO

IPC分类号： H01L21/311 ,  H01L21/027

CPC分类号： H01L21/31133 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02118 ,  H01L21/02351 ,  H01L21/0271 ,  H01L21/31138 ,  H01L21/31144

摘要： A pattern is formed on an underlying layer of a target object by a pattern forming method. The pattern forming method includes (a) forming a block copolymer layer, which includes a first polymer and a second polymer and is configured to be self-assembled, on the underlying layer; (b) processing the target object to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer; (c) etching the second region partway in a thickness direction of the second region in a capacitively coupled plasma processing apparatus after the processing of the target object; (d) generating secondary electrons from an upper electrode of the plasma processing apparatus by applying a negative DC voltage to the upper electrode and irradiating the secondary electrons onto the target object, after the etching of the second region; and (e) additionally etching the second region in the plasma processing apparatus after the irradiating of the secondary electrons onto the target object.