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    HIGH-FREQUENCY POWER SUPPLY STRUCTURE AND PLASMA CVD DEVICE USING THE SAME
    8.
    发明公开
    HIGH-FREQUENCY POWER SUPPLY STRUCTURE AND PLASMA CVD DEVICE USING THE SAME 有权
    高频功率结构和相同的使用的等离子体CVD COMPONENT

    公开(公告)号：EP1484788A4

    公开(公告)日：2008-05-21

    申请号：EP03708585

    申请日：2003-03-13

    申请人： MITSUBISHI HEAVY IND LTD

    发明人： MASHIMA H ,  KAWAMURA K ,  TAKANO A ,  TAKEUCHI Y ,  SIGEMIZU T ,  AOI T

    IPC分类号： H01L21/205 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H05H1/46

    CPC分类号： H01J37/32577 ,  H01J37/32082

    摘要： A high-frequency power supply structure for reducing the reflection of the high-frequency power at the RF cable connection portion to an electrode and increasing the high-frequency power incident to the electrode. A plasma CVD device using the structure is also disclosed. In the high-frequency power supply structure to a planar electrode from an RF cable in a device for applying high-frequency power to the electrode so as to generate plasma, at a connection portion provided at the electrode end, the RF cable is located at the extension of the plane formed by the electrode so as to be in contact with the electrode. Since the RF cable is connected to the electrode substantially on the same plane formed by the electrode, symmetric voltage is applied to the connection portion and after with respect to a plane formed by the electrode and distribution of electric force line becomes symmetric. The change of impedance at the connection portion is reduced, reflection of the high-frequency power at the connection portion is reduced, and high-frequency power incident to the electrode is increased. Moreover, efficiency of film formation and surface processing is improved.

    REAKTIONSKAMMER MIT WENIGSTENS EINER HF-DURCHFÜHRUNG
    10.
    发明公开
    REAKTIONSKAMMER MIT WENIGSTENS EINER HF-DURCHFÜHRUNG 有权
    至少一个RF实现反应室

    公开(公告)号：EP1273027A1

    公开(公告)日：2003-01-08

    申请号：EP01933607.2

    申请日：2001-04-12

    申请人： Aixtron AG

    发明人： FRANKEN, Walter ,  STRAUCH, Gerd ,  KÄPPELER, Johannes ,  JÜRGENSEN, Holger

    IPC分类号： H01J37/32

    CPC分类号： H01J37/321 ,  H01J37/32577

    摘要： The invention relates to a reaction chamber especially for carrying out substrate coating methods, such as CVD methods, characterized in that at least one opening is provided in at least one outer wall in which an HF and especially an RF feedthrough is inserted in a pressure or vacuum tight manner. The inventive reaction chamber is further characterized by a combination of the following features: a support plate is sealingly inserted in every opening; the support plate has at least one opening for an HF line; every HF line is provided with a collar in the zone disposed in the reaction chamber, a first seal being mounted on said collar; a first disc from an insulating material is inserted between a second seal on the support pate and the first seal on the collar; a thread is provided in the zone outside the reaction chamber of every HF line, a screw element being screwed onto said thread in such a manner that it sealingly forces the collar of the HF line against the insulating disc via the first seal and said disc against the support plate via the second seal, without an electrical contact between the HF line and the support plate being established or an arc-over between the HF line and the support plate occurring.