公开(公告)号：EP1187187A4

公开(公告)日：2004-08-04

申请号：EP00915523

申请日：2000-04-14

申请人： TOKYO ELECTRON LTD ,  NGK INSULATORS LTD

发明人： KAWAKAMI SATORU ,  IWABUCHI KATSUHIKO ,  KUWAJIMA RYO ,  USHIKOSHI RYUSUKE ,  YAMADA NAOHITO ,  KAWAJIRI TETSUYA

IPC分类号： H01L21/302 ,  C23C16/458 ,  C23C16/46 ,  C23C16/511 ,  C23F4/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01L21/67103 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001

摘要： The temperature control of substrates (W) to be processed is improved in a plasma processing apparatus. A chamber (10) includes a cylindrical ceramic support (26). The upper end of the support (26) is hermetically connected to the back (24b) of a wafer stage (24) by solid-phase welding. The lower end of the support (26) is hermetically connected to the bottom (10b) of the chamber (10) through a lower cooling jacket (90) and O-rings (92, 96). The support (26) defines an atmospheric chamber (38) in which a cooling jacket (40) formed of disklike aluminum blocks is provided. The cooling jacket (40) is mounted on the back (24a) of the wafer stage (24) with a heat-conducting sheet (42).

公开(公告)号：EP1156516A4

公开(公告)日：2004-06-16

申请号：EP99969842

申请日：1999-09-29

申请人： TOKYO ELECTRON LTD

发明人： IMAHASHI ISSEI ,  ISHII NOBUO ,  KAWAKAMI SATORU ,  KAWAI YOSHINOBU ,  UEDA YOKO

IPC分类号： C23C16/00 ,  C23C16/511 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/00 ,  H05H1/46

CPC分类号： H01J37/09 ,  H01J37/32192 ,  H01J37/32678

摘要： The reflection of electromagnetic waves in a vacuum chamber of an ECR plasma processor is decreased to suppress standing waves so that plasma density can be easily controlled to perform uniform processing. A first vacuum chamber (21) has an inner wall provided with a microwave absorber (6), which includes a resistor such as carbon, low-loss dielectric such as water, magnetic substance such as ferrite ceramic, or a combination of those materials. The microwave absorber (6) absorbs the microwave introduced into the first vacuum chamber (21) through a window (23) from a waveguide (25), and the reflection is suppressed. As a result, a substantially desired pattern of plasma density distribution is easily formed in the ECR point.

公开(公告)号：EP1119030A4

公开(公告)日：2004-06-09

申请号：EP99943304

申请日：1999-09-13

申请人： TOKYO ELECTRON LTD

发明人： OKA SHINSUKE ,  NAKASE RISA ,  AKAHORI TAKASHI ,  KAWAKAMI SATORU

IPC分类号： H01L21/302 ,  C23C16/44 ,  C23C16/458 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01L21/67069 ,  C23C16/4401 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/67028

摘要： A wafer stage (4), which holds a semiconductor wafer (W), is surrounded by a ring (5), for example, consisting of aluminum nitride, which is substantially at the same level of the wafer stage (4). This ring (5) has a buried electrode (52) in the surface. An annular source gas supply (6) is provided over the upper part of the wafer stage (4). The gas supply has its inner face in which an electrode (63) that is exposed in a vacuum container (2). Just before the plasma generation is stopped, a positive voltage is applied to the electrodes (52, 63), which serve to collect particles confined in the container when the plasma disappears.

摘要翻译： 在用于支撑半导体晶片W的支撑台（4）周围，例如环状体（5）。 氮化铝被设置成具有与支撑台（4）的支撑面相同的高度。 在环体（5）的表面部分嵌有电极（52）。 环状沉积气体供给部（6）设置成围绕支撑台（4）的上部区域。 在气体供给部（6）的内周壁上设置电极（63），露出于真空容器（2）内。 在等离子体的产生停止之前，向吸引电极（52,63）施加正电压。 因此，当等离子体消失时，被限制在其中的颗粒被吸入电极（52,63）中。

公开(公告)号：EP1132956A4

公开(公告)日：2005-04-27

申请号：EP99918304

申请日：1999-04-30

申请人： TOKYO ELECTRON LTD

发明人： KAWAKAMI SATORU

IPC分类号： H01L21/00 ,  H01L21/68

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  Y10T279/23

摘要： A vacuum processor for semiconductor wafers comprises a cooling section (31) including refrigerant channel (32). Two intermediate dielectric plates (4A, 4B) are provided on top of the cooling section with an intervening O-ring (35), and a dielectric plate (5) is provided on the intermediate dielectric plates. The dielectric substance plates (4, 4B, 5) include buried electrodes (41, 51), and buried heaters (42, 52) in their surfaces. The electrostatic adsorption force joins intermediate dielectric plates (4A, 4B) and joins intermediate dielectric plates (4B, 5) so that little or no space may be formed in the junctions. Therefore, the heat transmission becomes uniform in the surface, and the backside of the intermediate dielectric plate (4A) with the O-ring (35) is kept as cool as 200 DEG C or lower. This keeps the O-ring from thermal modification and allows uniform, high-vacuum processing.

摘要翻译： 在半导体晶片等的真空处理装置中，在设置有冷却通路32的冷却部31的上表面设置有两个中间电介质板4A和4B，其间具有O形环35，以及电介质板 5设置在其顶部。 电极41和51嵌入在这些电介质板4A，4B和5中的每一个的表面部分中，并且加热器42和52嵌入其内部。 中间电介质板4A和4B与中间电介质板4B和电介质板5一样通过静电力连接在一起。因此，在这些连接区域中在相邻部件之间形成的真空环境中的任何间隙被消除或减少。 由此，可以确保在各表面内的热转印均匀，与O形环35接触的中间电介质板4A的后表面的温度也可以不高于200℃， 可以抑制由于热而产生的O形环，并且可以以高程度的表面均匀性进行真空处理。