公开(公告)号：EP1779438B2

公开(公告)日：2019-07-31

申请号：EP05755884.3

申请日：2005-06-22

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： SUGIMOTO, Masahiro ,  KACHI, Tetsu ,  NAKANO, Yoshitaka ,  UESUGI, Tsutomu ,  UEDA, Hiroyuki ,  SOEJIMA, Narumasa

IPC分类号： H01L29/778 ,  H01L21/335

公开(公告)号：EP1815523B1

公开(公告)日：2016-09-14

申请号：EP05828962.0

申请日：2005-11-14

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： SUGIMOTO, Masahiro ,  UESUGI, Tsutomu ,  UEDA, Hiroyuki ,  SOEJIMA, Narumasa ,  KACHI, Tetsu

IPC分类号： H01L29/812 ,  H01L29/78 ,  H01L29/778 ,  H01L29/06 ,  H01L29/08 ,  H01L29/20 ,  H01L29/41

CPC分类号： H01L29/7802 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0843 ,  H01L29/0847 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/41 ,  H01L29/778 ,  H01L29/7788 ,  H01L29/8122

摘要： A semiconductor device is provided with a drain electrode 22, a semiconductor base plate 32, an electric current regulation layer 42 covering a part of a surface of the semiconductor base plate 32 and leaving a non-covered surface 55 at the surface of the semiconductor base plate 32, a semiconductor layer 50 covering a surface of the electric current regulation layer 42, and a source electrode 62 formed at a surface of the semiconductor layer 50. A drift region 56, a channel forming region 54, and a source region 52 are formed within the semiconductor layer 50. The drain electrode 22 is connected to a first terminal of a power source, and the source electrode 62 is connected to a second terminal of the power source. With this semiconductor layer 50, it is possible to increase withstand voltage or reduce the occurrence of current leakage.

公开(公告)号：EP1842238B1

公开(公告)日：2010-07-21

申请号：EP06701454.8

申请日：2006-01-20

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： SUGIMOTO, Masahiro ,  KACHI, Tetsu ,  UESUGI, Tsutomu ,  UEDA, Hiroyuki ,  SOEJIMA, Narumasa

IPC分类号： H01L29/778 ,  H01L29/45 ,  H01L29/423 ,  H01L21/335 ,  H01L29/20

CPC分类号： H01L29/452 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

公开(公告)号：EP1842238A2

公开(公告)日：2007-10-10

申请号：EP06701454.8

申请日：2006-01-20

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： SUGIMOTO, Masahiro ,  KACHI, Tetsu ,  UESUGI, Tsutomu ,  UEDA, Hiroyuki ,  SOEJIMA, Narumasa

IPC分类号： H01L29/778

CPC分类号： H01L29/452 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device 10 comprises a heterojunction between a lower semiconductor layer 26 made of p-type gallium nitride and an upper semiconductor layer 28 made of n-type AlGaN, wherein the upper semiconductor layer 28 has a larger band gap than the lower semiconductor layer 26. The semiconductor device 10 further comprises a drain electrode 32 formed on a portion of a top surface of the upper semiconductor layer 28, a source electrode 34 formed on a different portion of the top surface of the upper semiconductor layer 28, and a gate electrode 36 electrically connected to the lower semiconductor layer 26. The semiconductor device 10 can operate as normally-off.