METHOD OF JOINING
    4.
    发明公开
    METHOD OF JOINING 审中-公开
    VERBINDUNGSVERFAHREN

    公开(公告)号:EP2108474A4

    公开(公告)日:2017-07-05

    申请号:EP08704529

    申请日:2008-02-05

    IPC分类号: B23K20/00 B23K35/14 B23K35/30

    摘要: At a comparatively early stage, members to be bonded 10A and 10B are pressurized together by an applied pressure that is a comparatively low pressure P1. Under an applied pressure condition (a gas venting process) of the comparatively low pressure P1, an organic protective film 16 is vaporized by heating a bonding material 12, and a void portion of a porous structure that is formed by metal nanoparticles 18 and a binder 20 in the bonding material 12 is not collapsed any more than necessary due to the applied pressure. Thus, the void portion of the porous structure functions as a degassing path for the gasified organic protective film 16, and the gas is smoothly released from between the members to be bonded 10A and 10B. At the time point when the temperature of the bonding material 12 has reached a predetermined temperature, the applied pressure is increased from the comparatively low pressure P1 to a comparatively high pressure P2 (a pressure increase process). Further, the bonding strength is increased by bonding the members to be bonded 10A and 10B together by applying the comparatively high pressure P2 (a bonding process).

    摘要翻译: 在比较早的阶段,被接合部件10A和10B通过比较低的压力P1的作用压力而被加压。 在比较低的压力P1的加压条件(排气工序)下,通过加热接合材料12使有机保护膜16蒸发,并且由金属纳米粒子18和粘合剂形成的多孔结构的空隙部分 由于所施加的压力,接合材料12中的接合材料20不会塌陷得超过需要。 因此,多孔结构的空隙部分用作气化的有机保护膜16的排气路径,并且气体从待结合的构件10A和10B之间平稳地释放。 在接合材料12的温度达到规定温度的时刻,施加压力从比较低的压力P1上升到比较高的压力P2(增压处理)。 另外,通过施加比较高的压力P2(接合工序),使被接合构件10A,10B接合,从而提高接合强度。