公开(公告)号：EP1735838A2

公开(公告)日：2006-12-27

申请号：EP05744389.7

申请日：2005-04-15

申请人： Trustees of Boston University

发明人： MOUSTAKAS, Theodore, D. ,  CABALU, Jasper, S.

IPC分类号： H01L29/24

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/184 ,  H01L31/1852 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  Y02E10/544

摘要： A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The substrate or first layer is then a template for growing and texturing other semiconductor layers from the device. The textured layers are replicated to the surface from the substrate to enhance light extraction or light absorption. Multiple quantum wells, comprising several barrier and quantum well layers, are deposited as alternating textured layers. The texturing in the region of the quantum well layers greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. This is the case in nitride semiconductors grown along the polar [0001] or [000-1] directions.

公开(公告)号：EP0843900A1

公开(公告)日：1998-05-27

申请号：EP96926059.0

申请日：1996-07-05

申请人： TRUSTEES OF BOSTON UNIVERSITY

发明人： MOUSTAKAS, Theodore, D. ,  MISRA, Mira

IPC分类号： H01L31

CPC分类号： H01L31/0304 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544

摘要： A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

公开(公告)号：EP1735838B1

公开(公告)日：2011-10-05

申请号：EP05744389.7

申请日：2005-04-15

申请人： Trustees of Boston University

发明人： MOUSTAKAS, Theodore, D. ,  CABALU, Jasper, S.

IPC分类号： G02F1/017 ,  H01L21/20 ,  H01L21/18 ,  H01L21/302

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/184 ,  H01L31/1852 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  Y02E10/544

摘要： A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The substrate or first layer is then a template for growing and texturing other semiconductor layers from the device. The textured layers are replicated to the surface from the substrate to enhance light extraction or light absorption. Multiple quantum wells, comprising several barrier and quantum well layers, are deposited as alternating textured layers. The texturing in the region of the quantum well layers greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. This is the case in nitride semiconductors grown along the polar [0001] or [000-1] directions.

摘要翻译： 因此，半导体传感器，太阳能电池或发射器或前体具有沉积在衬底上的衬底和织构化半导体层。 该层可以在基底上生长时被纹理化，或者通过复制纹理化基底表面而被纹理化。 然后衬底或第一层是用于从器件生长和纹理化其他半导体层的模板。 纹理层从基底复制到表面以增强光提取或光吸收。 包含多个势垒层和量子阱层的多个量子阱被沉积为交替纹理层。 如果半导体是极性的并且量子阱沿着极性方向生长，则量子阱层的区域中的纹理极大地提高了内部量子效率。 沿极性[0001]或[000-1]方向生长的氮化物半导体就是这种情况。

公开(公告)号：EP0576566A1

公开(公告)日：1994-01-05

申请号：EP92908776.0

申请日：1992-03-18

申请人： TRUSTEES OF BOSTON UNIVERSITY

发明人： MOUSTAKAS, Theodore, D.

IPC分类号： C30B23 ,  C30B29 ,  H01L21 ,  H01L33 ,  H01S5

CPC分类号： H01L33/32 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/0075 ,  Y10S148/113

摘要： Procédé de préparation de couches monocristallines de GaN très isolant dans une chambre de croissance épitaxiale à faisceau moléculaire. On confère à un substrat monocristallin la structure en treillis appropriée pour obtenir la structure cristalline de GaN désirée. Une source de faisceaux moléculaires de Ga et une source d'azote atomique et ionique activé sont présentes dans la chambre de croissance. On dépose la couche désirée en exposant le substrat aux sources de Ga et d'azote dans un processus de croissance en deux étapes comprenant une étape de nucléation à basse température et une étape de croissance à haute température. Le processus à basse température est exécuté à 100-400 °C et le processus à haute température est exécuté à 600-900 °C. La source préférée d'azote activé est un plasma à micro-ondes de résonance produit par un cyclotron à électrons.

公开(公告)号：EP1952449A2

公开(公告)日：2008-08-06

申请号：EP06827176.6

申请日：2006-10-31

申请人： Trustees of Boston University

发明人： MOUSTAKAS, Theodore, D. ,  CABALU, Jasper S.

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32

摘要： A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

公开(公告)号：EP0576566B1

公开(公告)日：1999-05-26

申请号：EP92908776.5

申请日：1992-03-18

申请人： TRUSTEES OF BOSTON UNIVERSITY

发明人： MOUSTAKAS, Theodore, D.

IPC分类号： H01L21/203 ,  C30B25/02

CPC分类号： H01L33/32 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/0075 ,  Y10S148/113

摘要： This invention relates to a method of preparing highly insulating GaN single crystal films in a molecular beam epitaxial growth chamber. A single crystal substrate is provided with the appropriate lattice match for the desired crystal structure of GaN. A molecular beam source of Ga and source of activated atomic and ionic nitrogen are provided within the growth chamber. The desired film is deposited by exposing the substrate to Ga and nitrogen sources in a two step growth process using a low temperature nucleation step and a high temperature growth step. The low temperature process is carried out at 100 DEG -400 DEG C. and the high temperature process is carried out at 600 DEG -900 DEG C. The preferred source of activated nitrogen is an electron cyclotron resonance microwave plasma.