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公开(公告)号：EP2897921B1
公开(公告)日：2017-12-20
申请号：EP13839518.1
申请日：2013-09-19
发明人： MIRANZO, Pilar , OCAL, Carmen , OSENDI, Maria, Isabel , BELMONTE, Manuel , RAMIREZ, Cristina , ROMAN-MANSO, Benito , GUITIERREZ, Humberto, R. , TERRONES, Mauricio
IPC分类号： B82Y30/00 , C04B35/64 , C04B35/573 , C04B35/575 , C04B35/577 , C04B35/626 , C04B35/645 , H01B1/18
CPC分类号： C04B35/573 , B82Y30/00 , C04B35/575 , C04B35/6261 , C04B35/64 , C04B35/645 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3418 , C04B2235/383 , C04B2235/3834 , C04B2235/422 , C04B2235/425 , C04B2235/443 , C04B2235/5436 , C04B2235/5454 , C04B2235/6567 , C04B2235/6581 , C04B2235/666 , C04B2235/78 , H01B1/04 , H01B1/18
摘要： We provide a method for the in situ development of graphene containing silicon carbide (SiC) matrix ceramic composites, and more particularly to the in situ graphene growth within the bulk ceramic through a single-step approach during SiC ceramics densification using an electric current activated/assisted sintering (ECAS) technique. This approach allows processing dense, robust, highly electrical conducting and well dispersed nanocomposites having a percolated graphene network, eliminating the handling of potentially hazardous nanostructures. Graphene/SiC components could be used in technological applications under strong demanding conditions where good electrical, thermal, mechanical and/or tribological properties are required, such as micro and nanoelectromechanical systems (MEMS and NEMS), sensors, actuators, heat exchangers, breaks, components for engines, armours, cutting tools, microturbines or microrotors.
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公开(公告)号：EP2897921A1
公开(公告)日：2015-07-29
申请号：EP13839518.1
申请日：2013-09-19
发明人： MIRANZO, Pilar , OCAL, Carmen , OSENDI, Maria, Isabel , BELMONTE, Manuel , RAMIREZ, Cristina , ROMAN-MANSO, Benito , GUITIERREZ, Humberto, R. , TERRONES, Mauricio
IPC分类号： C04B35/577 , C04B35/64 , B82Y30/00
CPC分类号： C04B35/573 , B82Y30/00 , C04B35/575 , C04B35/6261 , C04B35/64 , C04B35/645 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3418 , C04B2235/383 , C04B2235/3834 , C04B2235/422 , C04B2235/425 , C04B2235/443 , C04B2235/5436 , C04B2235/5454 , C04B2235/6567 , C04B2235/6581 , C04B2235/666 , C04B2235/78 , H01B1/04 , H01B1/18
摘要： We provide a method for the in situ development of graphene containing silicon carbide (SiC) matrix ceramic composites, and more particularly to the in situ graphene growth within the bulk ceramic through a single-step approach during SiC ceramics densification using an electric current activated/assisted sintering (ECAS) technique. This approach allows processing dense, robust, highly electrical conducting and well dispersed nanocomposites having a percolated graphene network, eliminating the handling of potentially hazardous nanostructures. Graphene/SiC components could be used in technological applications under strong demanding conditions where good electrical, thermal, mechanical and/or tribological properties are required, such as micro and nanoelectromechanical systems (MEMS and NEMS), sensors, actuators, heat exchangers, breaks, components for engines, armours, cutting tools, microturbines or microrotors.
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