公开(公告)号：EP2623482B1

公开(公告)日：2018-06-27

申请号：EP11829302.6

申请日：2011-09-29

申请人： NGK Insulators, Ltd.

发明人： KANEDA, Atsushi ,  INOUE, Takayuki ,  WATANABE, Tsuyoshi

IPC分类号： C04B35/565 ,  B01J35/04 ,  C04B38/00 ,  C04B35/626 ,  C04B35/63 ,  C04B111/00 ,  B01J27/224 ,  F01N3/20 ,  F01N3/28

CPC分类号： C04B38/0006 ,  B01J27/224 ,  B01J32/00 ,  B01J35/04 ,  C04B35/565 ,  C04B35/6263 ,  C04B35/6316 ,  C04B2111/00793 ,  C04B2111/0081 ,  C04B2235/3826 ,  C04B2235/383 ,  C04B2235/3834 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/606 ,  C04B2235/722 ,  C04B2235/767 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  F01N3/2026 ,  F01N3/2828 ,  Y02T10/26 ,  Y10T428/24149 ,  Y10T428/268 ,  Y10T428/2982 ,  C04B38/0074

摘要： Provided is a silicon carbide ceramic having a small amount of resistivity change due to temperature change and being capable of generating heat by current application; and containing silicon carbide crystals having 0.1 to 25 mass% of 4H-SiC silicon carbide crystals and 50 to 99.9 mass% of 6H-SiC silicon carbide crystals, preferably having a nitrogen content of 0.01 mass% or less, more preferably containing two or more kinds of silicon carbide particles containing silicon carbide crystals and silicon for binding these silicon carbide particles to each other and having a silicon content of from 10 to 40 mass%.

公开(公告)号：EP2796182B1

公开(公告)日：2017-05-03

申请号：EP14159747

申请日：2014-03-14

申请人： NGK INSULATORS LTD

发明人： KIKUCHI YOSHIO ,  SUZUKI TAKASHI

IPC分类号： B01D46/24 ,  B01D53/86 ,  B32B18/00 ,  C04B35/565 ,  C04B35/573 ,  C04B35/63 ,  C04B35/645 ,  F01N3/20 ,  F01N3/28

CPC分类号： B01D53/86 ,  B01D46/2425 ,  B32B18/00 ,  C04B35/565 ,  C04B35/6316 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3481 ,  C04B2235/3834 ,  C04B2235/3891 ,  C04B2235/428 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/663 ,  C04B2235/762 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2237/365 ,  C04B2237/86 ,  F01N3/2828

公开(公告)号：EP2897921A4

公开(公告)日：2016-06-01

申请号：EP13839518

申请日：2013-09-19

申请人： PENN STATE RES FOUND ,  CONSEJO SUPERIOR INVESTIGACION

发明人： MIRANZO PILAR ,  OCAL CARMEN ,  OSENDI MARIA ISABEL ,  BELMONTE MANUEL ,  RAMIREZ CRISTINA ,  ROMAN-MANSO BENITO ,  GUITIERREZ HUMBERTO R ,  TERRONES MAURICIO

IPC分类号： B82Y30/00 ,  C04B35/573 ,  C04B35/575 ,  C04B35/577 ,  C04B35/626 ,  C04B35/64 ,  C04B35/645 ,  H01B1/18

CPC分类号： C04B35/573 ,  B82Y30/00 ,  C04B35/575 ,  C04B35/6261 ,  C04B35/64 ,  C04B35/645 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3418 ,  C04B2235/383 ,  C04B2235/3834 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/443 ,  C04B2235/5436 ,  C04B2235/5454 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/666 ,  C04B2235/78 ,  H01B1/18

摘要： We provide a method for the in situ development of graphene containing silicon carbide (SiC) matrix ceramic composites, and more particularly to the in situ graphene growth within the bulk ceramic through a single-step approach during SiC ceramics densification using an electric current activated/assisted sintering (ECAS) technique. This approach allows processing dense, robust, highly electrical conducting and well dispersed nanocomposites having a percolated graphene network, eliminating the handling of potentially hazardous nanostructures. Graphene/SiC components could be used in technological applications under strong demanding conditions where good electrical, thermal, mechanical and/or tribological properties are required, such as micro and nanoelectromechanical systems (MEMS and NEMS), sensors, actuators, heat exchangers, breaks, components for engines, armours, cutting tools, microturbines or microrotors.

公开(公告)号：EP2857375A1

公开(公告)日：2015-04-08

申请号：EP14187418.0

申请日：2014-10-02

申请人： Shinano Electric Refining Co., Ltd.

发明人： Mochizuki, Masahiro ,  Shimizu, Takaaki

IPC分类号： C04B35/573 ,  C01B31/36 ,  C04B35/626

CPC分类号： C04B35/64 ,  C01B32/956 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C01P2006/14 ,  C01P2006/16 ,  C04B35/573 ,  C04B35/6261 ,  C04B35/62675 ,  C04B2235/3418 ,  C04B2235/3834 ,  C04B2235/48 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/762 ,  C04B2235/785 ,  C04B2235/786 ,  Y10T428/2982

摘要： A spherical crystalline silicon carbide powder as well as its manufacturing method are proposed; the new powder mean grain size is 0.5 - 5 micrometers, its specific volume of interior pores having a mean diameter of 0.003 through 0.1 micrometer is 0.000007 cm 3 /g through 0.01 cm 3 /g, and its specific surface area is 0.5 m 2 /g through 8.0 m 2 /g.

摘要翻译： 提出一种球形结晶碳化硅粉末及其制造方法; 新粉末平均粒径为0.5-5微米，其平均直径为0.003至0.1微米的内部孔的比体积为0.000007cm 3 / g至0.01cm 3 / g，其比表面积为0.5m 2 / g至8.0m 2 / g。

公开(公告)号：EP1561737B1

公开(公告)日：2011-12-14

申请号：EP03733472.9

申请日：2003-06-18

申请人： Kabushiki Kaisha Toshiba

发明人： SUYAMA, Shoko Toshiba Corporation ,  KAMEDA, Tsuneji Toshiba Corporation ,  ITOH, Yoshiyasu Toshiba Corporation

IPC分类号： C04B35/56 ,  C04B37/00

CPC分类号： C04B14/324 ,  B32B2315/02 ,  B82Y30/00 ,  C04B35/565 ,  C04B35/573 ,  C04B37/005 ,  C04B37/006 ,  C04B37/008 ,  C04B2235/383 ,  C04B2235/3834 ,  C04B2235/422 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/6027 ,  C04B2235/728 ,  C04B2235/762 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/94 ,  C04B2235/96 ,  C04B2235/9615 ,  C04B2237/083 ,  C04B2237/086 ,  C04B2237/365

摘要： Silicon carbide matrix composite material (1) comprising silicon carbide matrix (2) as a host. The silicon carbide matrix (2) comprises first silicon carbide phase (3) of 0.1 to 10 μm average crystal grain diameter and second silicon carbide phase (4) of 0.01 to 2 μm average crystal grain diameter. In interstices of silicon carbide crystal grains constituting the silicon carbide matrix (2), liberated silicon phase (5) amounting to, for example, 5 to 50 wt.% based on the composite material (1) is present continuously in network form. This fine structure enables realizing high strength and high toughness of the silicon carbide composite material (1).

公开(公告)号：EP2065352A4

公开(公告)日：2011-11-30

申请号：EP07807068

申请日：2007-09-11

申请人： UBE INDUSTRIES

发明人： MATSUNAGA KENJI ,  KAJII SHINJI ,  HOGAMI TOSHIHIKO

IPC分类号： C04B35/80 ,  C04B35/565 ,  C04B35/571 ,  C04B35/575 ,  D06M11/34 ,  D06M11/74 ,  D06M101/00

CPC分类号： D01F6/76 ,  C04B35/571 ,  C04B35/575 ,  C04B35/62281 ,  C04B35/62873 ,  C04B35/806 ,  C04B2235/3205 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3409 ,  C04B2235/3834 ,  C04B2235/422 ,  C04B2235/441 ,  C04B2235/483 ,  C04B2235/486 ,  C04B2235/5252 ,  C04B2235/5256 ,  C04B2235/6587 ,  C04B2235/723 ,  C04B2235/75 ,  C04B2235/96 ,  D01F1/02 ,  D01F9/10

公开(公告)号：EP1600798B1

公开(公告)日：2011-09-21

申请号：EP05018617.0

申请日：2002-05-08

申请人： ECM Ingenieur-Unternehmen für Energie- und Umwelttechnik GmbH

发明人： Krödel, Matthias ,  Ziegler, Fred

IPC分类号： G02B5/08 ,  G02B7/182 ,  C04B37/00 ,  C04B35/80

CPC分类号： G02B7/183 ,  B32B2315/02 ,  C04B35/524 ,  C04B35/565 ,  C04B35/571 ,  C04B35/573 ,  C04B35/6264 ,  C04B35/6267 ,  C04B37/005 ,  C04B38/0032 ,  C04B2111/00612 ,  C04B2111/80 ,  C04B2235/3834 ,  C04B2235/424 ,  C04B2235/428 ,  C04B2235/5248 ,  C04B2235/762 ,  C04B2237/083 ,  C04B2237/385 ,  G02B5/08 ,  C04B35/52

公开(公告)号：EP2328848A1

公开(公告)日：2011-06-08

申请号：EP09789115.4

申请日：2009-08-12

申请人： Corning Inc.

发明人： DAWES, Steven, B. ,  SENARATNE, Wageesha

IPC分类号： C04B35/573 ,  C04B38/00

CPC分类号： C04B35/573 ,  C04B35/63488 ,  C04B38/0022 ,  C04B2111/0081 ,  C04B2235/3418 ,  C04B2235/3834 ,  C04B2235/3873 ,  C04B2235/441 ,  C04B2235/48 ,  C04B2235/80 ,  Y10S977/882 ,  Y10S977/883 ,  Y10T428/24496 ,  C04B35/565 ,  C04B38/0054

摘要： A method for preparing ordered mesoporous silicon carbide (OMSiC) nanocomposites uses an evaporation-induced self-assembly of a precursor composition that preferably includes a phenolic resin, pre-hydrolyzed tetraethyl orthosilicate, a surfactant, and butanol. The precursor mixture is dried, cross-linked and heated to form ordered mesoporous silicon carbide material having discrete domains of ordered, mesoscale pores.

摘要翻译： 制备有序介孔碳化硅（OMSiC）纳米复合材料的方法使用优选包括酚醛树脂，预水解的原硅酸四乙酯，表面活性剂和丁醇的前体组合物的蒸发诱导的自组装。 将前体混合物干燥，交联并加热以形成具有有序的中尺度孔的离散区域的有序介孔碳化硅材料。

公开(公告)号：EP1391442B1

公开(公告)日：2010-04-28

申请号：EP01980904.5

申请日：2001-10-25

申请人： Japan Science And Technology Agency

发明人： KOHYAMA, Akira c/o Institute of Advanced Energy ,  KATOH, Yutai c/o Institute of Advanced Energy

IPC分类号： C04B35/80

CPC分类号： C04B35/62897 ,  B82Y30/00 ,  C04B35/575 ,  C04B35/6264 ,  C04B35/62863 ,  C04B35/62868 ,  C04B35/62873 ,  C04B35/62884 ,  C04B35/6303 ,  C04B35/806 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3418 ,  C04B2235/3834 ,  C04B2235/483 ,  C04B2235/5244 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/77 ,  C04B2235/96

摘要： A method for producing a SiC fiber-reinforced SiC composite material, which comprises providing a slurry comprising a medium and, dispersed therein, a fine SiC powder and a sintering auxiliary, impregnating a SiC fiber coated with one or more of carbon, boron nitride and silicon carbide with the slurry, to thereby prepare a preformed product, and subjecting the product to hot pressing preferably under a pressure of 10 Mpa or more and at a temperature of 1600 to 1800˚C. As the sintering auxiliary, use is preferably made of one or more oxides selected from among Al2O3, Y2O3, SiO2 and CaO. The slurry optionally further comprises a silicon-containing polymer such as a polycarbosilane, a polyvinyl silane and a polymethyl silane. The method allows the suppression of reaction of the SiC fiber with the matrix due to the above coating, which leads to the production of a SiC fiber-reinforced SiC composite material being significantly improved in mechanical properties.

公开(公告)号：EP1717216A4

公开(公告)日：2009-11-25

申请号：EP04807736

申请日：2004-12-24

申请人： BRIDGESTONE CORP

发明人： ODAKA FUMI ,  SHINOGAYA T ,  MIYANO MARI

IPC分类号： C04B35/569 ,  H05B3/14 ,  C04B35/565 ,  C04B35/576 ,  C04B35/638 ,  H05B3/68 ,  H05B3/74

CPC分类号： C04B35/565 ,  C04B35/638 ,  C04B2235/383 ,  C04B2235/3834 ,  C04B2235/46 ,  C04B2235/5436 ,  C04B2235/602 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/668 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/96 ,  H05B3/141