公开(公告)号：EP1090891A1

公开(公告)日：2001-04-11

申请号：EP99919551.4

申请日：1999-05-13

申请人： Toyo Kohan Co., Ltd

发明人： SAIJO, Kinji Toyo Kohan Co., Ltd. ,  OHSAWA, Shinji Toyo Kohan Co., Ltd. ,  YOSHIDA, Kazuo Toyo Kohan Co., Ltd.

IPC分类号： C04B37/02 ,  B23K20/00 ,  B23K20/02 ,  B32B15/04 ,  B32B31/20 ,  B32B31/22 ,  C23F4/00 ,  H05K3/00 ,  H05K3/38

CPC分类号： B32B38/0036 ,  B32B15/04 ,  B32B2309/02 ,  B32B2309/12 ,  B32B2311/00 ,  B32B2315/02 ,  C04B37/021 ,  C04B2237/40 ,  H05K3/38 ,  Y10S428/94

摘要： A method of manufacturing a high-quality metal foil/ceramics joining material (19) and a metal foil laminated ceramic substrate (20) which can prevent a damage to a ceramic material and enhance the productivity of the metal foil/ceramics joining material and the metal foil etched, are pressure-joined to ensure an easy and positive subsequent pressure-joining and the ceramic material (13) can be prevented from being broken because the ceramics material (13) is heated while being placed on a holder (14) and is pressure-joined under a pressure of 1 kg/mm 2 or lower.

摘要翻译： 一种制造高品质金属箔/陶瓷接合材料（19）和金属箔层压陶瓷基板（20）的方法，其可以防止损坏陶瓷材料并提高金属箔/陶瓷接合材料的生产率和 金属箔被蚀刻，被压接以确保随后的接合容易且积极，并且可以防止陶瓷材料（13）因放置在保持器（14）上而加热陶瓷材料（13）而被破坏，并且 在1kg / mm 2以下的压力下进行压接。

公开(公告)号：EP1193755A1

公开(公告)日：2002-04-03

申请号：EP00937200.4

申请日：2000-06-09

申请人： Toyo Kohan Co., Ltd.

发明人： SAIJO, Kinji Toyo Kohan Co., Ltd. ,  YOSHIDA, Kazuo Toyo Kohan Co., Ltd. ,  OKAMOTO, Hiroaki Toyo Kohan Co., Ltd. ,  OHSAWA, Shinji Toyo Kohan Co., Ltd.

IPC分类号： H01L23/12 ,  B23K20/00

CPC分类号： H01L23/3114 ,  H01L23/3107 ,  H01L23/49582 ,  H01L23/49861 ,  H01L2224/16 ,  H01L2924/07811 ,  H05K3/062 ,  H05K3/28 ,  H05K3/4007 ,  H05K2201/0355 ,  H05K2201/0367 ,  H05K2201/10378 ,  H05K2203/0384 ,  H05K2203/1572 ,  Y10T29/30 ,  Y10T29/301 ,  Y10T29/302 ,  Y10T29/49002 ,  Y10T428/1291 ,  H01L2924/00

摘要： A clad plate for forming an interposer for a semiconductor device which can be manufactured at low cost and has good characteristics, an interposer for a semiconductor device, and a method of manufacturing them. Copper foil materials (19, 24, 33) forming conductive layers (10, 17, 18) and nickel plating (20, 21) forming etching stopper layers (11, 12) are formed and pressed to form a clad plate (34) for forming an interposer for a semiconductor device. Thus, a clad plate (34) for forming an interposer for a semiconductor device is manufactured. The clad plate (34) is selectively etched to form a columnar (17) columnar conductor (17), and an insulating layer (13) is formed on the copper foil material forming a wiring layer (10). A bump (18) for connection of a semiconductor chip and the wiring layer (10) are formed on the opposite side to the side on which the columnar conductor (17) is formed. Thus, an interposer for a semiconductor device ia manufactured.

摘要翻译： 的包覆板在中介层形成一种能以低成本制造，并且具有良好的特性，到内插器用于半导体装置的半导体装置，以及制造它们的方法。 铜箔材料（19，24，33）上形成导电层（10，17，18）和镀镍（20，21）形成蚀刻阻挡层（11，12）被形成并压制以形成用于复合板（34） 在中介层用于形成半导体器件中。 因此，对于在中介层的半导体器件中形成复合板（34）被制造。 复合板（34）被选择性地蚀刻以形成柱状（17）的柱状导体（17），和在绝缘层（13）形成在形成布线层（10）的铜箔的材料。 一种半导体芯片和布线层（10）的连接凸起（18）形成在相对侧上在其上柱状导体（17）形成在侧。 因此，到内插器用于半导体器件制造的IA。

公开(公告)号：EP1090891B1

公开(公告)日：2012-09-26

申请号：EP99919551.4

申请日：1999-05-13

申请人： Toyo Kohan Co., Ltd.

发明人： SAIJO, Kinji Toyo Kohan Co., Ltd. ,  OHSAWA, Shinji Toyo Kohan Co., Ltd. ,  YOSHIDA, Kazuo Toyo Kohan Co., Ltd.

IPC分类号： C04B37/02 ,  B23K20/00 ,  B23K20/02 ,  B23K20/233 ,  B32B15/04 ,  C23F4/00 ,  H05K3/00 ,  H05K3/38 ,  B32B37/10 ,  B32B38/10

CPC分类号： B32B38/0036 ,  B32B15/04 ,  B32B2309/02 ,  B32B2309/12 ,  B32B2311/00 ,  B32B2315/02 ,  C04B37/021 ,  C04B2237/40 ,  H05K3/38 ,  Y10S428/94

公开(公告)号：EP1193755B1

公开(公告)日：2011-08-10

申请号：EP00937200.4

申请日：2000-06-09

申请人： Toyo Kohan Co., Ltd.

发明人： SAIJO, Kinji Toyo Kohan Co., Ltd. ,  YOSHIDA, Kazuo Toyo Kohan Co., Ltd. ,  OKAMOTO, Hiroaki Toyo Kohan Co., Ltd. ,  OHSAWA, Shinji Toyo Kohan Co., Ltd.

IPC分类号： H01L23/12 ,  B23K20/00 ,  H05K3/06 ,  H05K3/40

CPC分类号： H01L23/3114 ,  H01L23/3107 ,  H01L23/49582 ,  H01L23/49861 ,  H01L2224/16 ,  H01L2924/07811 ,  H05K3/062 ,  H05K3/28 ,  H05K3/4007 ,  H05K2201/0355 ,  H05K2201/0367 ,  H05K2201/10378 ,  H05K2203/0384 ,  H05K2203/1572 ,  Y10T29/30 ,  Y10T29/301 ,  Y10T29/302 ,  Y10T29/49002 ,  Y10T428/1291 ,  H01L2924/00

摘要： A clad plate for forming an interposer for a semiconductor device which can be manufactured at low cost and has good characteristics, an interposer for a semiconductor device, and a method of manufacturing them. Copper foil materials (19, 24, 33) forming conductive layers (10, 17, 18) and nickel plating (20, 21) forming etching stopper layers (11, 12) are formed and pressed to form a clad plate (34) for forming an interposer for a semiconductor device. Thus, a clad plate (34) for forming an interposer for a semiconductor device is manufactured. The clad plate (34) is selectively etched to form a columnar conductor (17), and an insulating layer (13) is formed on the copper foil material forming a wiring layer (10). A bump (18) for connection of a semiconductor chip and the wiring layer (10) are formed on the opposite side to the side on which the columnar conductor (17) is formed. Thus, an interposer for a semiconductor device is manufactured.