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公开(公告)号：EP3109891A1
公开(公告)日：2016-12-28
申请号：EP16176269.5
申请日：2016-06-24
发明人： SATO, Yoji , SATO, Takayasu , NAKATA, Hiromichi , TACHIBANA, Kazutaka , ARIYADA, Osamu , TAKANO, Yuji , TSURUMOTO, Ryo
IPC分类号： H01J37/32
CPC分类号： C23C16/513 , C23C16/455 , H01J37/32211 , H01J37/32311 , H01J37/32577
摘要： A plasma chemical vapor deposition device includes a chamber (12), a first conductor (20) having an elongated shape, a second conductor (30) having a tubular shape, a high-frequency output device (45), and a direct-current power supply (46). A first connecting portion (23) of the first conductor (20) with the high-frequency output device (45) and a second connecting portion (24) of the first conductor (20) with the direct-current power supply (46) are both placed outside the chamber (12). A distance from one end of the first conductor (20) to the first connecting portion (23) is shorter than a distance from the one end of the first conductor (20) to the second connecting portion (24). An impedance change portion (25) is provided between the first connecting portion (23) and the second connecting portion (24) in the first conductor (20), the impedance change portion having an impedance different from an impedance between the one end of the first conductor (20) and the first connecting portion (23).
摘要翻译： 等离子体化学气相沉积装置包括腔室（12），具有细长形状的第一导体（20），具有管状形状的第二导体（30），高频输出装置（45）和直流 电源（46）。 具有高频输出装置（45）的第一导体（20）的第一连接部分（23）和具有直流电源（46）的第一导体（20）的第二连接部分（24） 两者都放置在室（12）的外部。 从第一导体（20）的一端到第一连接部（23）的距离比从第一导体（20）的一端到第二连接部（24）的距离短。 阻抗变化部分（25）设置在第一导体（20）中的第一连接部分（23）和第二连接部分（24）之间，阻抗变化部分的阻抗不同于 第一导体（20）和第一连接部分（23）。
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2.发明公开SPRAY COATING FILM, ENGINE HAVING THE SPRAY COATING FILM AND FILM-FORMING METHOD OF THE SPRAY COATING FILM 审中-公开SPRÜHBESCHICHTUNGSFILM，MOTOR MIT DEMSPRÜHBESCHICHTUNGSFILMUND FILMBILDUNGSVERFAHREN DESSPRÜHBESCHICHTUNGSFILMS
公开(公告)号：EP3023510A1
公开(公告)日：2016-05-25
申请号：EP15195672.9
申请日：2015-11-20
CPC分类号： F02F1/24 , C23C4/02 , C23C4/067 , C23C4/11 , C23C4/134 , C23C28/324 , C23C28/3455 , F01L3/04
摘要： A spray coating film has a first spray coating film formed on a surface of an aluminum substrate and a second spray coating film formed on a surface of the first spray coating film. In the first spray coating film, an inorganic material with a layered crystalline structure is dispersed in a Ni-based alloy material, and an area ratio of the inorganic material is in a range from 40% to 80% relative to the sectional area of the first spray coating film. The second spray coating film is a porous film composed of ZrO 2 -SiO 2 based ceramic containing 30% to 50% by mass of SiO 2 , and the second spray coating film has an area ratio of pores of 30% to 80% relative to the sectional area of the second spray coating film.
摘要翻译： 喷涂膜具有形成在铝基板的表面上的第一喷涂膜和形成在第一喷涂膜的表面上的第二喷涂膜。 在第一喷涂膜中，具有层状晶体结构的无机材料分散在Ni基合金材料中，并且无机材料的面积比相对于所述无机材料的截面积在40％至80％的范围内 第一喷涂膜。 第二喷涂膜是由含有30质量％〜50质量％的SiO 2的ZrO 2 -SiO 2系陶瓷构成的多孔膜，第二喷涂膜的面积比为30〜80质量％ 第二喷涂膜的截面积。
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公开(公告)号：EP3023510B1
公开(公告)日：2018-08-29
申请号：EP15195672.9
申请日：2015-11-20
CPC分类号： F02F1/24 , C23C4/02 , C23C4/067 , C23C4/11 , C23C4/134 , C23C28/324 , C23C28/3455 , F01L3/04
摘要： A spray coating film has a first spray coating film formed on a surface of an aluminum substrate and a second spray coating film formed on a surface of the first spray coating film. In the first spray coating film, an inorganic material with a layered crystalline structure is dispersed in a Ni-based alloy material, and an area ratio of the inorganic material is in a range from 40% to 80% relative to the sectional area of the first spray coating film. The second spray coating film is a porous film composed of ZrO 2 -SiO 2 based ceramic containing 30% to 50% by mass of SiO 2 , and the second spray coating film has an area ratio of pores of 30% to 80% relative to the sectional area of the second spray coating film.
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公开(公告)号：EP3109891B1
公开(公告)日：2018-05-09
申请号：EP16176269.5
申请日：2016-06-24
发明人： SATO, Yoji , SATO, Takayasu , NAKATA, Hiromichi , TACHIBANA, Kazutaka , ARIYADA, Osamu , TAKANO, Yuji , TSURUMOTO, Ryo
IPC分类号： H01J37/32
CPC分类号： C23C16/513 , C23C16/455 , H01J37/32211 , H01J37/32311 , H01J37/32577
摘要： A plasma chemical vapor deposition device includes a chamber (12), a first conductor (20) having an elongated shape, a second conductor (30) having a tubular shape, a high-frequency output device (45), and a direct-current power supply (46). A first connecting portion (23) of the first conductor (20) with the high-frequency output device (45) and a second connecting portion (24) of the first conductor (20) with the direct-current power supply (46) are both placed outside the chamber (12). A distance from one end of the first conductor (20) to the first connecting portion (23) is shorter than a distance from the one end of the first conductor (20) to the second connecting portion (24). An impedance change portion (25) is provided between the first connecting portion (23) and the second connecting portion (24) in the first conductor (20), the impedance change portion having an impedance different from an impedance between the one end of the first conductor (20) and the first connecting portion (23).
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公开(公告)号：EP4414478A1
公开(公告)日：2024-08-14
申请号：EP24155479.9
申请日：2024-02-02
发明人： INAGAKI, Koji , MURAI, Jyunya , YOSHITOMI, Jun , SATO, Yoji , YAMASHITA, Osamu , NAKATA, Hiromichi , NISHIYAMA, Masaaki
CPC分类号： C25D17/002 , C25D3/00 , C25D21/10 , C25D5/08
摘要： A film forming method for a metal film (F) includes steps of, after a substrate material (B) is mounted on a mounting table (40), forming the metal film (F) on a surface of the substrate material (B) with a plating solution (L) brought into contact with the substrate material (B) through an electrolyte membrane (13), and with the plating solution (L) sealed, separating the electrolyte membrane (13) from the substrate material (B) by moving at least one of the mounting table (40) and a container (15) in a direction away from the other. The plating solution (L) contained in the container (15) is circulated through a circulation path (50) outside the container (15), before or during the film forming step. A circulation path (50) is blocked and the plating solution (L) in the container (15) is sealed, before this separating step.
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公开(公告)号：EP3950211A1
公开(公告)日：2022-02-09
申请号：EP21178257.8
申请日：2021-06-08
IPC分类号： B23K26/352 , B23K26/354 , B23K26/0622 , B23K101/34 , B23K103/10 , B23K103/12 , B23K103/14 , B23K103/08
摘要： A manufacturing method for a metal member includes irradiating a first region of a surface of the base material (11), the surface having at least any one of Cu, Al, Sn, Ti, and Fe, as a main component, with a laser beam to melt the first region; generating metal particles from a vapor or plasma of a metal released to a predetermined atmosphere by melting the surface of the base material (11) in the first region, and depositing the metal particles in the first region; irradiating a second region adjacent to the first region with a laser beam to melt the second region; and generating metal particles from a vapor or plasma of a metal released to a predetermined atmosphere by melting the surface of the base material (11) in the second region, and depositing the metal particles in each of the first region and the second region.
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公开(公告)号：EP3214202A1
公开(公告)日：2017-09-06
申请号：EP17158752.0
申请日：2017-03-01
发明人： TACHIBANA, Kazutaka , SATO, Takayasu , SATO, Yoji , NAKATA, Hiromichi , MANABE, Kazuyoshi , OKAMURA, Seiji , YAMAMOTO, Izuru
IPC分类号： C23C16/26 , C23C16/511 , C23C28/04
CPC分类号： C23C16/26 , C23C16/511 , C23C16/52 , H05H1/46 , H05H2001/4622
摘要： A PCVD apparatus includes a waveguide member which supports the workpiece with a portion of the waveguide member positioned in a reactor and causes microwaves output from a high-frequency output device to propagate to the workpiece. In a process of gradually increasing an intensity of the microwaves propagating to the workpiece through the waveguide member from "0", the intensity (SMW) of the microwaves output from the high-frequency output device when step-up of a bias current (BA) of the workpiece occurs is referred to as a first intensity (SMW1), and in a process of gradually increasing the intensity (SMW) of the microwaves from the first intensity (SMW1), the intensity (SMW) of the microwaves when step-up of the bias current (BA) occurs again is referred to as a second intensity (SMW2). During film formation, the microwaves having an intensity (SMW) of higher than the first intensity (SMW1) and lower than the second intensity (SMW2) are output from the high-frequency output device.
摘要翻译： 一种PCVD设备包括波导部件，该波导部件利用位于反应器中的波导部件的一部分来支撑工件，并且使从高频输出装置输出的微波传播到工件。 在通过波导构件向工件传播的微波的强度从“0”逐渐增加的过程中，当偏置电流（BA）升高时，从高频输出装置输出的微波的强度（SMW） ）称为第一强度（SMW1），并且在从第一强度（SMW1）逐渐增加微波的强度（SMW）的过程中，当步进式加热时，微波的强度（SMW） 再次发生偏置电流（BA）的上升称为第二强度（SMW2）。 在成膜过程中，从高频输出装置输出强度（SMW）高于第一强度（SMW1）且低于第二强度（SMW2）的微波。
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