公开(公告)号：EP2544225A4

公开(公告)日：2018-07-25

申请号：EP11750546

申请日：2011-02-24

申请人： UNIV OSAKA

发明人： SUGANUMA KATSUAKI ,  KIM SEONGJUN

IPC分类号： H01L21/60 ,  B23K35/28 ,  C22C18/00 ,  H01L23/373 ,  H01L23/482 ,  H01L23/488

CPC分类号： C22C18/00 ,  B23K35/282 ,  B23K2201/40 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/04026 ,  H01L2224/05187 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/29 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/325 ,  H01L2224/32507 ,  H01L2224/83101 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/15787 ,  H01L2924/05432 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/014

摘要： In a semiconductor device 100 according to the present invention in which a semiconductor member 120 is stacked on a substrate 110, the semiconductor member 120 and the substrate 110 are bonded together by means of a semiconductor device bonding material 130 of which main component is zinc. Further, a coating layer to prevent diffusion of the semiconductor device bonding material 130 is provided on at least one of the surface of the substrate 110 and the surface of the semiconductor member 120. In addition, the coating layer 140 is configured such that a barrier layer 141 composed of nitride, carbide, or carbonitride and a protective layer 142 composed of a noble metal are stacked. Further, the nitride, the carbide, or the carbonitride composing the barrier layer 141 is selected so as to have free energy smaller than that of a material composing an insulating layer 111 provided in the substrate 110.