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公开(公告)号：EP3196336A1
公开(公告)日：2017-07-26
申请号：EP17152346.7
申请日：2017-01-20
IPC分类号： C23C16/40 , C23C16/455 , C23C16/46 , H01L21/02
CPC分类号： H01L21/02164 , C23C16/401 , C23C16/4408 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02214 , H01L21/02216 , H01L21/0228
摘要： A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 650°C or greater is provided. In one aspect, there is provided a method to deposit a silicon oxide film or material comprising the steps of: providing a substrate in a reactor; introducing into the reactor at least one halidosiloxane precursor selected from the group of compounds having formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen source into the reactor; and purging reactor with purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited and the process is conducted at one or more temperatures ranging from about 650 to 1000°C.
摘要翻译： 提供了用于在原子层沉积工艺中以650℃或更高的一个或多个温度沉积氧化硅膜的方法和组合物。 一方面，提供了一种沉积氧化硅膜或材料的方法，包括以下步骤：在反应器中提供衬底; 向反应器中引入至少一种选自本文所述的具有式I和II的化合物组的卤代硅氧烷前体; 用吹扫气体吹扫反应器; 将氧源引入反应器; 并用吹扫气体吹扫反应器; 并且其中重复所述步骤直到沉积期望厚度的氧化硅，并且所述过程在约650至1000℃的一个或多个温度下进行。
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公开(公告)号：EP2944608B1
公开(公告)日：2020-04-22
申请号：EP15164099.2
申请日：2013-06-03
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3.发明授权Method for depositing silicon-containing films using organoaminodisilane precursors 有权使用有机氨基乙硅烷前体沉积含硅膜的方法
公开(公告)号：EP2669249B1
公开(公告)日：2017-12-20
申请号：EP13170300.1
申请日：2013-06-03
IPC分类号： C07F7/02 , H01L21/02 , C23C16/455 , C23C16/40 , C23C16/34
CPC分类号： H01L21/02211 , C07F7/025 , C07F7/10 , C23C16/345 , C23C16/402 , C23C16/45542 , C23C16/45553
摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I: wherein R 1 and R 3 are independently selected from linear or branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, an electron withdrawing and a C 6 to C 10 aryl group; R 2 and R 4 are independently selected from hydrogen, a linear or branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, an electron withdrawing, and a C 6 to C 10 aryl group; and wherein any one, all, or none of R 1 and R 2 , R 3 and R 4 , R 1 and R 3 , or R 2 and R 4 are linked to form a ring.
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公开(公告)号：EP2860182B1
公开(公告)日：2020-01-22
申请号：EP14185776.3
申请日：2014-09-22
发明人： O'Neill, Mark Leonard , Xiao, Manchao , Lei, Xinjian , Ho, Richard , Chandra, Haripin , Macdonald, Matthew R. , Wang, Meiliang
IPC分类号： C23C16/455 , C07F7/10 , C23C16/24 , H01L21/02
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5.发明授权Volatile monoamino-dialkoxysilanes and their use for creating silicon-containing films 有权挥发性单氨基二烷氧基硅烷及其用于制造含硅膜的用途
公开(公告)号：EP2620440B1
公开(公告)日：2018-04-04
申请号：EP13152729.3
申请日：2013-01-25
发明人： Spence, Daniel P. , Pearlstein, Ronald Martin , Lei, Xinjian , Xiao, Manchao , Ho, Richard , O'Neill, Mark Leonard , Chandra, Haripin
摘要： Alkoxyaminosilane compounds having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ (R 1 R 2 )NSiR 3 OR 4 OR 5 €ƒ€ƒ€ƒ€ƒ€ƒFormula (I) wherein R 1 is independently selected from a linear or branched C 1 to C 10 alkyl group; a C 2 to C 12 alkenyl group; a C 2 to C 12 alkynyl group; a C 4 to C 10 cyclic alkyl group; and a C 6 to C 10 aryl group; R 2 and R 3 are each independently selected from hydrogen; a linear or branched C 1 to C 10 alkyl group; a C 3 to C 12 alkenyl group, a C 3 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 6 to C 10 aryl group; and R 4 and R 5 are each independently selected from a linear or branched C 1 to C 10 alkyl group; a C 2 to C 12 alkenyl group; a C 2 to C 12 alkynyl group; a C 4 to C 10 cyclic alkyl group; and a C 6 to C 10 aryl group.
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