公开(公告)号：EP2892153A4

公开(公告)日：2016-02-24

申请号：EP13804060

申请日：2013-08-21

申请人： ZTE CORP ,  UNIV TIANJIN

发明人： ZHANG HAO ,  DU LIANGZHEN ,  PANG WEI ,  LI JIANBANG ,  HU NIANCHU ,  KANG KAI

IPC分类号： H03H9/02 ,  H01L41/18

CPC分类号： H03H9/02102 ,  H01L41/0477 ,  H01L41/18 ,  H01L41/183

摘要： A piezoelectric acoustic resonator with an adjustable temperature compensation capability is disclosed. The piezoelectric acoustic resonator includes: a piezoelectric acoustic reflection structure, a first electrode, a second electrode, a piezoelectric layer between the first electrode and the second electrode, and a temperature compensation layer; wherein the temperature compensation layer is a single-layer temperature compensation layer formed of Si x O y material, or a composite temperature compensation layer formed by stacking material with a positive temperature coefficient of sound velocity and material with a negative temperature coefficient of sound velocity; and the temperature compensation layer is configured to: perform reverse compensation for a temperature frequency shift caused by the first electrode, the piezoelectric layer and the second electrode in the piezoelectric acoustic resonator; wherein x:y is not equal to 1:2.

公开(公告)号：EP2930845A4

公开(公告)日：2015-12-30

申请号：EP13870550

申请日：2013-08-26

申请人： ZTE CORP ,  UNIV TIANJIN

发明人： ZHANG HAO ,  DU LIANGZHEN ,  PANG WEI ,  LU YONG ,  QI MINGKE ,  LIANG GUANGMING

IPC分类号： H03H9/56 ,  H03H9/60 ,  H03H9/64

CPC分类号： H03H9/205 ,  H03H7/0161 ,  H03H9/568 ,  H03H9/605 ,  H03H9/6483 ,  H03H9/703

公开(公告)号：EP3062441A4

公开(公告)日：2016-11-02

申请号：EP14855594

申请日：2014-06-20

申请人： ZTE CORP

发明人： ZHANG HAO ,  DU LIANGZHEN ,  PANG WEI ,  CHENG WEI ,  JIANG YUAN ,  SUN HAILONG

IPC分类号： H03H9/17 ,  H03H3/02 ,  H03H3/04

CPC分类号： H03H9/172 ,  H03H3/04 ,  H03H9/171 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/025 ,  H03H2003/0421 ,  H03H2003/0428 ,  H03H2003/0435 ,  H03H2003/0442 ,  H03H2003/0471

摘要： Provided are a method and device for manufacturing a film resonator. The manufacturing method includes that: a thickness of each film layer which has been deposited is detected; when the detected thickness of any film layer which has been deposited is not in a standard thickness range, it is judged whether a mass loading layer has been deposited, and when the mass loading layer has not been deposited, at least one film layer which has not been deposited is selected for thickness compensation, and according to a compensated thickness of the selected at least one film layer which has not been deposited and a target frequency offset, a thickness of the mass loading layer required for generating the target frequency offset is calculated, wherein the standard thickness range is determined by a target frequency and a process production capacity of the resonator; subsequent film deposition is conducted according to the compensated thickness of the selected at least one film layer which has not been deposited and the calculated thickness of the mass loading layer. The manufacturing method and device can accurately generate the required frequency offset, thereby improving the yield rate of products.