公开(公告)号：EP4170901A1

公开(公告)日：2023-04-26

申请号：EP21829471.8

申请日：2021-06-22

申请人： ZTE Corporation

发明人： CHEN, Huazhang ,  CUI, Xiaojun ,  HOU, Ting ,  AN, Jinyuan

IPC分类号： H03F1/02

摘要： Disclosed in the present disclosure is a Doherty power amplifier, comprising at least one carrier power amplifier and at least one peak power amplifier, which are connected in parallel. Each carrier power amplifier and each peak power amplifier comprise at least one set of carrier power amplification units and at least one set of peak power amplification units, respectively. Each set of carrier power amplification units is connected in parallel for power synthesis, each set of peak power amplification units is connected in parallel for power synthesis, each carrier power amplification unit and each peak power amplification unit comprises a two-way power amplification circuit, each two-way power amplification circuit is connected in parallel for power synthesis, and the two-way power amplification circuits each comprise medium-low power amplification tubes. The medium-low power amplification tubes are power amplification tubes the saturation power of which is less than or equal to a preset threshold. Also disclosed in the present disclosure is a power amplification method.

公开(公告)号：EP2536026A1

公开(公告)日：2012-12-19

申请号：EP11832080.3

申请日：2011-10-27

申请人： ZTE Corporation

发明人： HE, Gang ,  CHEN, Huazhang ,  CUI, Xiaojun

IPC分类号： H03F3/21

CPC分类号： H03F3/24 ,  H03F1/0288 ,  H03F3/195 ,  H03F2200/432

摘要： The present invention discloses a power amplifier tube and a power amplification method, wherein, the power amplifier tube includes a High Electron Mobility Transistor (HEMT) power amplifier die and a Lateral Double-Diffused Metal-Oxide Semiconductor (LDMOS) power amplifier die, and the HEMT power amplifier die and the LDMOS power amplifier die are integrated in the same package. The present invention should be configured as a Doherty amplifier, which designs a power tube by using a breakthrough new power amplifier die combination, and can achieve high efficient power amplification on the basis of ensuring a small volume of the power amplifier tube, compared with the existing Doherty amplifiers each of which uses the LDMOS power amplifier die.

摘要翻译： 本发明公开了功率放大管和功率放大方法，功率放大管包括高电子迁移率晶体管（HEMT）功率放大器管芯和横向双扩散金属氧化物半导体（LDMOS）功率放大器管芯，以及 HEMT功率放大器管芯和LDMOS功率放大器管芯集成在同一个封装中。 本发明应该被配置为Doherty放大器，其通过使用突破性的新功率放大器管芯组合来设计功率管，并且可以在确保功率放大器管体积小的基础上实现高效功率放大，与 现有的Doherty放大器，每个放大器都使用LDMOS功率放大器管芯。

公开(公告)号：EP2536025A1

公开(公告)日：2012-12-19

申请号：EP11852222.6

申请日：2011-10-27

申请人： ZTE Corporation

发明人： CHEN, Huazhang ,  CUI, Xiaojun ,  LIU, Jianli ,  AN, Jinyuan

IPC分类号： H03F1/07

CPC分类号： H03F3/211 ,  H03F1/0288 ,  H03F3/245 ,  H03F3/602 ,  H03F2200/405 ,  H03F2200/408

摘要： The present invention relates to a power amplifier apparatus and power amplifier circuit thereof, and the power amplifier circuit uses the Doherty circuit structure, and the power amplifier circuit uses high voltage heterojunction bipolor transistor (HVHBT) power amplifiers to achieve a carrier amplifier and a peak amplifier of the Doherty circuit structure. The power amplifier apparatus and power amplifier circuit thereof in the present invention improves the efficiency of the power amplification.

摘要翻译： 本发明涉及一种功率放大器装置及其功率放大器电路，功率放大器电路采用Doherty电路结构，功率放大电路采用高压异质结双色晶体管（HVHBT）功率放大器实现载波放大器和峰值 放大器的Doherty电路结构。 本发明的功率放大器装置和功率放大器电路提高了功率放大的效率。

公开(公告)号：EP2538556A1

公开(公告)日：2012-12-26

申请号：EP11832076.1

申请日：2011-10-27

申请人： ZTE Corporation

发明人： HE, Gang ,  CHEN, Huazhang ,  CUI, Xiaojun

IPC分类号： H03F3/20

CPC分类号： H03F3/68 ,  H03F1/0288 ,  H03F3/193 ,  H03F3/195 ,  H03F3/245

摘要： A power amplifier tube and a power amplification method are disclosed in the present invention. The power amplifier tube includes a high voltage heterojunction bipolar transistor (HVHBT) power amplifier die and a high electron mobility transistor (HEMT) power amplifier die, and the HVHBT power amplifier die and the HEMT power amplifier die are integrated in the same encapsulation. In the present invention, it should be configured as a Doherty amplifier, and the power tube is designed in a breakthrough combination manner of new power amplifier dies, compared with all the existing Doherty amplifiers which employ LDMOS power amplifier dies, the power amplification with high efficiency can be achieved on the basis of ensuring small volume of power amplifier tube.

摘要翻译： 本发明公开了一种功率放大管和功率放大方法。 功率放大管包括高压异质结双极型晶体管（HVHBT）功放管芯和高电子迁移率晶体管（HEMT）功放管芯，HVHBT功放管芯和HEMT功放管芯集成在同一封装中。 在本发明中，应该将其配置为Doherty放大器，并且功率管以新型功率放大器管芯的突破性组合方式设计，与所有使用LDMOS功率放大器管芯的现有Doherty放大器相比，功率放大率高 在确保功率放大管体积小的基础上可以达到效率。

公开(公告)号：EP2538552A1

公开(公告)日：2012-12-26

申请号：EP11854540.9

申请日：2011-10-28

申请人： ZTE Corporation

发明人： CUI, Xiaojun ,  CHEN, Huazhang ,  LIU, Jianli ,  AN, Jinyuan

IPC分类号： H03F1/07

CPC分类号： H03F3/211 ,  H03F1/0288 ,  H03F3/193 ,  H03F3/245 ,  H03F3/602 ,  H03F2200/405 ,  H03F2200/408

摘要： The present invention relates to a power amplifier apparatus and a power amplifier circuit thereof, the power amplifier circuit uses Doherty circuit structure, and the final stage power amplifier circuit uses high electron mobility transistor (HEMT) power amplifiers to achieve a Carrier amplifier with the Doherty circuit structure and a Peak amplifier with the Doherty circuit structure. The power amplifier apparatus and a power amplifier circuit thereof in the present invention improves the efficiency of the power amplifier.

摘要翻译： 本发明涉及功率放大器装置及其功率放大器电路，功率放大器电路使用Doherty电路结构，并且末级功率放大器电路使用高电子迁移率晶体管（HEMT）功率放大器来实现具有Doherty的载波放大器 电路结构和具有Doherty电路结构的峰值放大器。 本发明的功率放大器装置及其功率放大器电路提高了功率放大器的效率。

公开(公告)号：EP2538550A1

公开(公告)日：2012-12-26

申请号：EP11832075.3

申请日：2011-10-27

申请人： ZTE Corporation

发明人： CUI, Xiaojun ,  CHEN, Huazhang ,  DUAN, Bin ,  LIU, Jianli

IPC分类号： H03F1/07 ,  H03F3/20

CPC分类号： H03F3/68 ,  H03F1/0288 ,  H03F3/195 ,  H03F3/245

摘要： The present invention discloses a Doherty power amplifier apparatus and a power amplification method. The apparatus includes an auxiliary power amplifier apparatus and a main power amplifier apparatus, the auxiliary power amplifier apparatus is used to amplify signal power by adopting a Laterally Diffused Metal Oxide Semiconductor (LDMOS) device; and the main power amplifier apparatus is used to amplify signal power by adopting a High Electron Mobility Transistors (HEMT) device. The present invention adopts the HEMT device as the main power amplifier. Compared with the existing Doherty power amplifier in which both the main power amplifier and the auxiliary power amplifier adopt LDMOS, with the present invention, the power amplifier efficiency of the main power amplifier in the Doherty power amplifier can be enhanced, thereby making the power amplifier efficiency of the whole Doherty power amplifier be substantially increased.

摘要翻译： 本发明公开了一种Doherty功率放大器装置和功率放大方法。 该装置包括辅助功放装置和主功放装置，辅助功放装置用于采用横向扩散金属氧化物半导体（LDMOS）器件对信号功率进行放大， 主功率放大器采用高电子迁移率晶体管（HEMT）器件来放大信号功率。 本发明采用HEMT器件作为主功放。 与现有的主功放和辅助功放均采用LDMOS的Doherty功放相比，采用本发明，可以提高Doherty功放中主功放的功放效率，从而使功放 整个Doherty功率放大器的效率大大提高。

公开(公告)号：EP2624446A1

公开(公告)日：2013-08-07

申请号：EP11842467.0

申请日：2011-10-26

申请人： ZTE Corporation

发明人： CHEN, Huazhang ,  LIU, Jianli ,  AN, Jinyuan ,  CUI, Xiaojun

IPC分类号： H03F1/02

CPC分类号： H03F1/0288 ,  H03F1/0261 ,  H03F3/19 ,  H03F3/211 ,  H03F3/245 ,  H03F2200/15 ,  H03F2200/18 ,  H03F2200/405 ,  H03F2200/447 ,  H03F2200/451 ,  H03F2203/21106

摘要： Disclosed is a Doherty power amplifier apparatus, including: a drive amplifier circuit, a power splitter circuit and a power combiner circuit, wherein the power splittercircuit is connected to the drive amplifier circuit, the apparatus further comprising: a carrier amplifier circuit and a peak amplifier circuit connected in parallel between the power splitter circuit and the power combiner circuit, wherein the carrier amplifier circuit comprises one or more parallel carrier amplification branches, wherein each carrier amplification branch comprises a multi-stage carrier amplifier apparatus, the multi-stage carrier amplifier apparatus is used for achieving multi-stage carrier amplification; and the peak amplifier circuit comprises one or more parallel peak amplification branches, wherein each peak amplification branch comprises a multi-stage peak amplifier apparatus, the multi-stage peak amplifier apparatus is used for achieving multi-stage peak amplification. In the present invention, the consistency and manufacturability of batch manufacture of power amplifiers are good.

摘要翻译： 公开了一种Doherty功率放大器装置，包括：驱动放大器电路，功率分配器电路和功率合成器电路，其中功率分配器电路连接到驱动放大器电路，该装置还包括：载波放大器电路和峰值放大器 功率分配器电路和功率合成器电路并联连接，其中载波放大器电路包括一个或多个并行载波放大分支，其中每个载波放大分支包括多级载波放大器装置，多级载波放大器装置 用于实现多级载波放大; 并且峰值放大器电路包括一个或多个并行峰值放大分支，其中每个峰值放大分支包括多级峰值放大器装置，多级峰值放大器装置用于实现多级峰值放大。 在本发明中，功率放大器批量制造的一致性和可制造性良好。

公开(公告)号：EP2538557A1

公开(公告)日：2012-12-26

申请号：EP11846057.5

申请日：2011-10-27

申请人： ZTE Corporation

发明人： CHEN, Hauzhang ,  LIU, Jianli ,  CUI, Xiaojun

IPC分类号： H03F3/20

CPC分类号： H03F3/211 ,  H03F1/0277 ,  H03F1/0288 ,  H03F3/19 ,  H03F3/245 ,  H03F3/602 ,  H03F3/72 ,  H03F2200/507 ,  H03F2203/21106 ,  H03F2203/21142 ,  H03F2203/21196 ,  H03F2203/7206 ,  H03F2203/7236

摘要： The present invention discloses a Doherty power amplifier and a method for implementing the Doherty power amplifier. The Doherty power amplifier includes a peak amplifying branch and a carrier amplifying branch, wherein, the peak amplifying branch includes a radio frequency switch, and the radio frequency switch is configured to control on/off of a last stage peak power amplifier in the peak amplifying branch; wherein, a high voltage heterojunction bipolar transistor (HVHBT) device is adopted for a last stage carrier power amplifier of the carrier amplifying branch, and a laterally diffused metal oxide semiconductor (LDMOS) device is adopted for the last stage peak power amplifier of the peak amplifying branch of the power amplifier. By the present invention, it avoids that the peak power consumption is increased when the peak power amplifier is on ahead of time and enhances the efficiency of the whole power amplifier.

摘要翻译： 本发明公开了一种Doherty功放及其实现Doherty功放的方法。 Doherty功率放大器包括峰值放大支路和载波放大支路，其中，峰值放大支路包括射频开关，射频开关用于控制峰值放大的末级峰值功放的开启/关闭 科; 其中，载波放大支路的末级载波功率放大器采用高压异质结双极晶体管（HVHBT）器件，峰值末级峰值功率放大器采用横向扩散金属氧化物半导体（LDMOS）器件 放大功率放大器的分支。 通过本发明，避免了当峰值功率放大器提前打开时峰值功耗增加并且提高了整个功率放大器的效率。

公开(公告)号：EP2538551A1

公开(公告)日：2012-12-26

申请号：EP11854523.5

申请日：2011-10-28

申请人： ZTE Corporation

发明人： CUI, Xiaojun ,  CHEN, Huazhang ,  AN, Jinyuan ,  LIU, Jianli

IPC分类号： H03F1/07 ,  H03F3/68

CPC分类号： H03F3/211 ,  H03F1/0288 ,  H03F3/602 ,  H03F3/604 ,  H03F3/68 ,  H03F2200/405 ,  H03F2200/411

摘要： The present invention relates to a power amplifier apparatus and power amplifier circuit, and the power amplifier circuit uses the Doherty circuit structure, and uses a high voltage heterojunction bipolor transistor (HVHBT) power amplifier to achieve a Carrier amplifier of the Doherty circuit structure, and uses lateral double-diffused metal oxide semiconductor (LDMOS) to achieve a Peak amplifier. The power amplifier apparatus and power amplifier circuit in the present invention improves the efficiency of the power amplifier.

摘要翻译： 功率放大器装置和功率放大器电路本发明涉及功率放大器装置和功率放大器电路，功率放大器电路使用Doherty电路结构，并且使用高电压异质结双极晶体管（HVHBT）功率放大器来实现Doherty电路结构的载波放大器，并且 使用横向双扩散金属氧化物半导体（LDMOS）来实现峰值放大器。 本发明中的功率放大器装置和功率放大器电路提高了功率放大器的效率。

公开(公告)号：EP2538549A1

公开(公告)日：2012-12-26

申请号：EP11846058.3

申请日：2011-10-27

申请人： ZTE Corporation

发明人： CHEN, Huazhang ,  LIU, Jianli ,  CUI, Xiaojun ,  DUAN, Bin

IPC分类号： H03F1/02

CPC分类号： H03F3/211 ,  H03F1/0277 ,  H03F1/0288 ,  H03F3/195 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/405 ,  H03F2200/507 ,  H03F2203/21106 ,  H03F2203/21142 ,  H03F2203/21196 ,  H03F2203/7206 ,  H03F2203/7236

摘要： The present invention discloses a Doherty power amplifier and an implementation method thereof. A peak amplifying circuit of the Doherty power amplifier comprises a radio frequency switching circuit configured to control turn-on of the peak amplifying circuit; wherein a last stage carrier amplifier of a carrier amplifying circuit of the power amplifier uses a HVHBT device, and a last stage peak amplifier of the peak amplifying circuit of the power amplifier uses a GaN device. The present invention avoids the shortcoming when the peak branches in the Doherty power amplifier are turned on ahead of time, decreases power consumption of the peak amplifier and improves the batch efficiency of the whole Doherty power amplifier.

摘要翻译： 本发明公开了一种Doherty功率放大器及其实现方法。 Doherty功率放大器的峰值放大电路包括：射频切换电路，被配置为控制峰值放大电路的导通; 其中功率放大器的载波放大电路的最后级载波放大器使用HVHBT器件，功率放大器的峰值放大电路的最后级峰值放大器使用GaN器件。 本发明避免了Doherty功率放大器中的峰值分支提前启动时的缺点，降低了峰值放大器的功耗，并提高了整体Doherty功率放大器的批量效率。