公开(公告)号：EP2536026A1

公开(公告)日：2012-12-19

申请号：EP11832080.3

申请日：2011-10-27

申请人： ZTE Corporation

发明人： HE, Gang ,  CHEN, Huazhang ,  CUI, Xiaojun

IPC分类号： H03F3/21

CPC分类号： H03F3/24 ,  H03F1/0288 ,  H03F3/195 ,  H03F2200/432

摘要： The present invention discloses a power amplifier tube and a power amplification method, wherein, the power amplifier tube includes a High Electron Mobility Transistor (HEMT) power amplifier die and a Lateral Double-Diffused Metal-Oxide Semiconductor (LDMOS) power amplifier die, and the HEMT power amplifier die and the LDMOS power amplifier die are integrated in the same package. The present invention should be configured as a Doherty amplifier, which designs a power tube by using a breakthrough new power amplifier die combination, and can achieve high efficient power amplification on the basis of ensuring a small volume of the power amplifier tube, compared with the existing Doherty amplifiers each of which uses the LDMOS power amplifier die.

摘要翻译： 本发明公开了功率放大管和功率放大方法，功率放大管包括高电子迁移率晶体管（HEMT）功率放大器管芯和横向双扩散金属氧化物半导体（LDMOS）功率放大器管芯，以及 HEMT功率放大器管芯和LDMOS功率放大器管芯集成在同一个封装中。 本发明应该被配置为Doherty放大器，其通过使用突破性的新功率放大器管芯组合来设计功率管，并且可以在确保功率放大器管体积小的基础上实现高效功率放大，与 现有的Doherty放大器，每个放大器都使用LDMOS功率放大器管芯。

公开(公告)号：EP2541766A1

公开(公告)日：2013-01-02

申请号：EP11832079.5

申请日：2011-10-27

申请人： ZTE Corporation

发明人： HE, Gang ,  CHEN, Huazhang ,  CUI, Xiaojun

IPC分类号： H03F3/68

CPC分类号： H03F3/211 ,  H03F1/0288 ,  H03F3/195 ,  H03F3/245 ,  H03F3/602

摘要： The present invention discloses a power amplifier tube and a power amplification method, wherein, the power amplifier tube includes a High Voltage Heterojunction Bipolar Transistor (HVHBT) power amplifier die and a Lateral Double-Diffused Metal-Oxide Semiconductor (LDMOS) power amplifier die, and the HVHBT power amplifier die and the LDMOS power amplifier die are integrated in the same package. The present invention is applied to a Doherty amplifier, which designs a power tube by using a breakthrough new power amplifier die combination, and can achieve high efficient power amplification on the basis of ensuring a small volume of the power amplifier tube, compared with the existing Doherty amplifiers each of which uses the LDMOS power amplifier die.

摘要翻译： 本发明公开了一种功率放大管及功率放大方法，所述功放管包括高压异质结双极型晶体管HVHBT功放管芯和横向双扩散金属氧化物半导体LDMOS功放管芯， 而HVHBT功放管芯和LDMOS功放管芯集成在同一封装中。 本发明应用于Doherty放大器，该放大器通过使用突破性的新型功率放大器芯片组合来设计功率管，并且可以在保证功率放大管体积小的基础上实现高效率功率放大 Doherty放大器中的每一个都使用LDMOS功放管芯。

公开(公告)号：EP2538556A1

公开(公告)日：2012-12-26

申请号：EP11832076.1

申请日：2011-10-27

申请人： ZTE Corporation

发明人： HE, Gang ,  CHEN, Huazhang ,  CUI, Xiaojun

IPC分类号： H03F3/20

CPC分类号： H03F3/68 ,  H03F1/0288 ,  H03F3/193 ,  H03F3/195 ,  H03F3/245

摘要： A power amplifier tube and a power amplification method are disclosed in the present invention. The power amplifier tube includes a high voltage heterojunction bipolar transistor (HVHBT) power amplifier die and a high electron mobility transistor (HEMT) power amplifier die, and the HVHBT power amplifier die and the HEMT power amplifier die are integrated in the same encapsulation. In the present invention, it should be configured as a Doherty amplifier, and the power tube is designed in a breakthrough combination manner of new power amplifier dies, compared with all the existing Doherty amplifiers which employ LDMOS power amplifier dies, the power amplification with high efficiency can be achieved on the basis of ensuring small volume of power amplifier tube.

摘要翻译： 本发明公开了一种功率放大管和功率放大方法。 功率放大管包括高压异质结双极型晶体管（HVHBT）功放管芯和高电子迁移率晶体管（HEMT）功放管芯，HVHBT功放管芯和HEMT功放管芯集成在同一封装中。 在本发明中，应该将其配置为Doherty放大器，并且功率管以新型功率放大器管芯的突破性组合方式设计，与所有使用LDMOS功率放大器管芯的现有Doherty放大器相比，功率放大率高 在确保功率放大管体积小的基础上可以达到效率。