TWO-COMPONENT, RECTIFYING-JUNCTION MEMORY ELEMENT
    10.
    发明公开
    TWO-COMPONENT, RECTIFYING-JUNCTION MEMORY ELEMENT 审中-公开
    由两个部分组成同一方向上的屏障存储器元件

    公开(公告)号:EP1697968A4

    公开(公告)日:2008-12-03

    申请号:EP04812301

    申请日:2004-11-26

    申请人: UNIV PRINCETON

    摘要: Embodiments of the present invention are directed to low complexity, efficient, two-component memory elements for use in low-cost, robust, and reliable WORM memories. The memory element of one embodiment is an organic-on-inorganic heterojunction diode comprising an organic-polymer layer joined to a doped, inorganic semiconductor layer. The organic polymer layer serves both as one later of a two-later, semiconductor-based diode, as well as a fuse. Application of a voltage greater than a threshold WRITE voltage for a period of time greater than a threshold time interval for a WRITE-voltage pulse irreversibly and dramatically increases the resistivity of the organic polymer layer. The memory element that represents one embodiment of the present invention is more easily manufactured than previously described, separate-fuse-and-diode memory elements, and has the desirable characteristics of being switchable at lower voltages and with significantly shorter-duration WRITE-voltage pulses than the previously described memory elements.