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    ION EXCHANGE WAVEGUIDES AND METHODS OF FABRICATION
    5.
    发明公开
    ION EXCHANGE WAVEGUIDES AND METHODS OF FABRICATION 审中-公开
    离子交换纤维及其制备方法

    公开(公告)号：EP1266251A1

    公开(公告)日：2002-12-18

    申请号：EP99974127.5

    申请日：1999-11-10

    Applicant: California Institute of Technology

    Inventor： BURROWS, Lee, J.

    IPC: G02B6/12 ,  G02F1/035

    CPC classification number: G02F1/035 ,  C30B15/00 ,  C30B29/30 ,  C30B33/00 ,  G02B6/1345 ,  G02B2006/12169 ,  G02F2201/066 ,  G02F2201/07 ,  G02F2202/20 ,  Y10S117/91

    Abstract: A method for fabricating ion exchange waveguides, such as lithium niobate or lithium tantalate waveguides in optical modulators and other optical waveguide devices, utilizes pressurized annealing to further diffuse and limit exchange of the ions and includes ion exchanging the crystalline substrate with a source of ions and annealing the substrate by pressurizing a gas atmosphere containing the lithium niobate or lithium tantalate substrate above normal atmospheric pressure, heating the substrate to a temperature ranging from about 150 degrees Celsius to about 1000 degrees Celsius, maintaining pressure and temperature to effect greater ion diffusion and limit exchange, and cooling the structure to an ambient temperature at an appropriate ramp down rate. In another aspect of the invention a powder of the same chemical composition as the crystalline substrate is introduced into the anneal process chamber to limit the crystalline substrate from outgassing alkaline earth metal oxide during the anneal period. In yet another aspect of the invention an anneal container is provided that allows for crystalline substrates to be annealed in the presence of powder without contaminating the substrate with the powder during the anneal process. Waveguides manufactured in accordance with the method exhibit superior drift performance.

    A method of processing a substrate made of a ferroelectric single crystalline material
    6.
    发明公开
    A method of processing a substrate made of a ferroelectric single crystalline material 有权
    加工强电介质单晶材料的基材的方法

    公开(公告)号：EP0936481A3

    公开(公告)日：2000-10-25

    申请号：EP99301186.5

    申请日：1999-02-17

    Applicant: NGK INSULATORS, LTD.

    Inventor： Iwai, Makoto ,  Kawaguchi, Tatsuo ,  Imaeda, Minoru

    IPC: G02B6/136 ,  G02F1/37

    CPC classification number: G02B6/1345 ,  G02F1/3558 ,  G02F1/3775

    Abstract: A method of processing a substrate (1) made of a ferroelectric single crystalline material, including the steps of forming a desired proton-exchanged layer (2) in the substrate by proton-exchanging a portion of the substrate, and selectively removing the proton-exchanged layer to form a concave ditch structure (3) in the ferroelectric single crystalline substrate. The desired proton-exchange layer is formed using an acid containing a lithium salt as a proton-exchanging source and the surface of the substrate from which the concave ditch structure is formed is an X-cut surface or a Z-cut surface, as a main surface, of the ferroelectric single crystalline material used as the substrate. The concave ditch structure so formed can have its depth equal to or larger than its half opening width.

    Abstract translation: 处理基板的方法，（1）由铁电单晶材料的方法，包括形成由质子交换基板的一部分，并且选择性地去除所述质子在衬底一个希望的质子交换层（2）的步骤 交换层，以形成在铁电体单晶基板的凹沟结构（3）。 所需的质子交换层使用上酸含有锂盐作为质子交换源和从该凹沟结构是形成在所述基板的表面的X切割表面或Z切表面形成的，作为 主表面用作基片的强电介质单晶材料。 凹沟结构如此形成可以有其深度等于或大于它的半开口宽度大。

    A method of processing a substrate made of a ferroelectric crystalline material
    8.
    发明公开
    A method of processing a substrate made of a ferroelectric crystalline material 审中-公开
    Verfahren zur Behandlung eines Substrats aus ferroelektrischem kristallinem材料

    公开(公告)号：EP0922793A2

    公开(公告)日：1999-06-16

    申请号：EP98309646.2

    申请日：1998-11-25

    Applicant: NGK INSULATORS, LTD.

    Inventor： Kawaguchi, Tatsuo ,  Iwai, Makoto ,  Imaeda, Minoru

    IPC: C30B33/00 ,  C30B29/30

    CPC classification number: G02B6/1345 ,  C30B29/30 ,  C30B33/00 ,  G02F1/377

    Abstract: A substrate made of a ferroelectric crystalline material is processed by the steps of forming a desired proton-exchanged layer (2) in the substrate (1) by proton-exchanging a portion of the substrate, and selectively removing the proton-exchanged layer to form a recessed part (3) having a substantially semicircular sectional shape, wherein the proton-exchanging temperature is 120 to 180°C, In this way the desired shape is obtained.

    Abstract translation: 通过以下步骤处理由铁电晶体材料制成的衬底：通过质子交换衬底的一部分在衬底（1）中形成所需的质子交换层（2），并选择性地除去质子交换层以形成 具有大致半圆形截面形状的凹部（3），质子交换温度为120〜180℃，由此得到所需的形状。

    A laser processing method to an optical waveguide
    9.
    发明公开
    A laser processing method to an optical waveguide 失效
    Methode zur Laserbearbeitung von optischen Wellenleitern

    公开(公告)号：EP0838701A1

    公开(公告)日：1998-04-29

    申请号：EP97117963.5

    申请日：1997-10-16

    Applicant: NIPPON SHEET GLASS CO., LTD.

    Inventor： Tsunetomo, Keiji ,  Koyama, Tadashi

    IPC: G02B6/30 ,  G02B6/13

    CPC classification number: G02B6/1345 ,  G02B6/30 ,  G02B2006/12185

    Abstract: Laser ablation method for forming a hole for fitting an optical fiber only at a core portion without having to precisely match or accord the focus of a laser beam with the end surface of an optical waveguide. When a laser beam is irradiated onto the end surface of the optical waveguide, the focus of the laser beam is turned away from the end surface of the optical waveguide and a region of the irradiation includes the core and the periphery thereof. Thereafter, the energy of the laser beam is increased step by step, and a few pulses thereof are radiated with the intensity fixed when ablation occurs at the core portion, so that the hole is formed only at the core portion.

    Abstract translation: 激光烧蚀方法，用于形成用于仅在芯部上安装光纤的孔，而不必精确地匹配或使激光束与光波导的端面一致。 当将激光束照射在光波导的端面上时，激光束的焦点从光波导的端面离开，并且照射区域包括芯及其周边。 此后，激光束的能量逐步增加，并且在芯部发生烧蚀时以其固定的强度照射其几个脉冲，使得仅在芯部形成孔。

    FABRICATION D'UN GUIDE D'ONDES ENTERRE A PLUSIEURS PROFONDEURS D'ENTERREMENT
    10.
    发明公开
    FABRICATION D'UN GUIDE D'ONDES ENTERRE A PLUSIEURS PROFONDEURS D'ENTERREMENT 失效
    生产具有不同的穿透深度埋纤维

    公开(公告)号：EP0728318A1

    公开(公告)日：1996-08-28

    申请号：EP95900177.0

    申请日：1994-10-31

    Applicant: SCHNEIDER ELECTRIC SA

    Inventor： KEVORKIAN, Antoine ,  PERSEGOL, Dominique

    IPC: G02B6

    CPC classification number: G02B6/122 ,  G02B6/1345 ,  G02B6/1347 ,  G02B2006/12119 ,  G02B2006/12173 ,  G02B2006/12185

    Abstract: Method of locally embedding a waveguide (1) in a substrate (2). A mask (3) is arranged on the upper face of the substrate. An edge (9) of the mask obliquely intersects, at a low predetermined angle A, the waveguide to define a partially masked transition portion (1c) between a non-masked portion (1b) and a fully masked portion (1a) of the waveguide. After a stage in which the waveguide is embedded in the substrate, the mask (8) is withdrawn. The portion (1b) of the waveguide is thereby embedded at a depth greater than portion (1a), portion (1c) forming a gradual adiabatic transition between both portions. The method is useful in the manufacture of sensors.

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