PLASMA PROCESSING APPARATUS
    2.
    发明公开
    PLASMA PROCESSING APPARATUS 审中-公开
    PLASMAVERARBEITUNGSVORRICHTUNG

    公开(公告)号:EP3163598A1

    公开(公告)日:2017-05-03

    申请号:EP16192813

    申请日:2016-10-07

    IPC分类号: H01J37/32 H05H1/46

    摘要: Detection accuracy of a power of a progressive wave and detection accuracy of a power of a reflection wave can be improved. In a plasma processing apparatus, a first directional coupler is provided in a first waveguide which is configured to connect a microwave generating unit and a first port of a circulator. A first detector is connected to the first directional coupler. A second port of the circulator is connected to a plasma generating unit via a second waveguide. Further, a second directional coupler is provided in a third waveguide which is configured to connect a third port of the circulator and a dummy load. A second detector is connected to the second directional coupler.

    摘要翻译: 可以提高行波功率的检测精度和反射波功率的检测精度。 在等离子体处理装置中,第一定向耦合器设置在第一波导中,该第一波导配置为连接微波产生单元和循环器的第一端口。 第一检测器连接到第一定向耦合器。 循环器的第二端口经由第二波导连接到等离子体产生单元。 此外,第二定向耦合器被提供在第三波导中,该第三波导被配置成连接循环器的第三端口和假负载。 第二检测器连接到第二定向耦合器。

    IMPROVED MICROWAVE PLASMA REACTORS
    4.
    发明公开
    IMPROVED MICROWAVE PLASMA REACTORS 审中-公开
    改进的微波等离子体活化剂

    公开(公告)号:EP2707521A4

    公开(公告)日:2014-10-29

    申请号:EP12785030

    申请日:2012-05-11

    IPC分类号: C23C16/511 H01J37/32

    摘要: Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (>150 W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.

    An apparatus for performing a plasma chemical vapour deposition process
    6.
    发明公开
    An apparatus for performing a plasma chemical vapour deposition process 审中-公开
    Vorrichtung zurDurchführungeines plasmachemischen Dampfablagerungsverfahrens

    公开(公告)号:EP2594660A1

    公开(公告)日:2013-05-22

    申请号:EP12192493.0

    申请日:2012-11-14

    申请人: Draka Comteq B.V.

    摘要: The invention relates to an apparatus for performing a plasma chemical vapour deposition process. The apparatus comprises a mainly cylindrical resonator being provided with an outer cylindrical wall enclosing a resonant cavity having a substantially rotational symmetric shape with respect to a cylindrical axis. The resonator further includes side wall portions bounding the resonant cavity in opposite cylindrical axis directions. In addition, the apparatus comprises a microwave guide extending through the outer cylindrical wall into the resonant cavity. The length of the resonant cavity in the cylindrical direction varies as a function of the radial distance to the cylindrical axis.

    摘要翻译: 本发明涉及一种用于执行等离子体化学气相沉积工艺的装置。 该装置包括一个主要为圆柱形的谐振器,该谐振器设置有外圆柱形壁,其包围相对于圆柱轴线具有基本上旋转对称的形状的谐振腔。 谐振器还包括在相对的圆柱轴线方向上界定谐振腔的侧壁部分。 此外,该装置包括一个微波导件,其延伸穿过外圆筒壁进入谐振腔。 谐振腔在圆柱方向上的长度随着与圆柱轴线的径向距离的变化而变化。

    MICROWAVE PLASMA PROCESSING DEVICE
    8.
    发明公开
    MICROWAVE PLASMA PROCESSING DEVICE 有权
    MIKROWELLENPLASMA-VERARBEITUNGSEINRICHTUNG

    公开(公告)号:EP2276328A1

    公开(公告)日:2011-01-19

    申请号:EP09724062.6

    申请日:2009-03-27

    摘要: To provide a microwave plasma-treating apparatus which is capable of generating plasma having a high degree of uniformity of density and a high density for executing large-quantity and high-speed processing, capable of generating plasma of a large area, and capable of preventing dielectric windows from being thermally broken despite the apparatus being operated with large electric power for extended periods of time. The microwave plasma-treating apparatus includes a waveguide arranged to feed microwave electric power, a plurality of microwave coupling holes formed in the waveguide in the axial direction thereof, a dielectric member of a piece of plate capable of transmitting microwaves arranged in the waveguide in the axial direction thereof under the microwave coupling holes, a gap formed between the plurality of microwave coupling holes and the dielectric member, and a cooling member for cooling the dielectric member. Desirably, the microwave coupling holes have an annular shape.

    摘要翻译: 为了提供能够产生具有高密度均匀性和高密度的等离子体的微波等离子体处理装置,用于执行大量和高速处理,能够产生大面积的等离子体,并且能够防止 电介质窗不受热破坏,尽管设备长时间以大电力运行。 微波等离子体处理装置包括布置成馈送微波电力的波导管,在波导管的轴向形成的多个微波耦合孔,能够传输布置在波导管中的微波的电介质部件 在微波耦合孔之下的轴向方向,在多个微波耦合孔和电介质构件之间形成的间隙,以及用于冷却电介质构件的冷却构件。 理想地,微波耦合孔具有环形形状。