摘要:
The invention relates to an elementary device (1) for producing a plasma, comprising: a coaxial applicator (2) of microwave power comprising a conductive central core (23), a conductive external shield (24) surrounding said central core, and a medium (25) for propagating microwave energy, said medium being located between the central core and the shield; and a system (3) for coupling to a microwave generator, which system is placed on the shield, wherein the shield has a proximal end plugged with an insulating body (26) made of dielectric material that is transparent to the microwave energy and having an external surface (27) provided to make contact with a gas to be excited that is located in the interior of a chamber, and wherein the insulating body extends exteriorwise from the shield and its external surface (27) is nonplanar and protrudes out of the shield, the outside diameter of the body decreasing from the shielding to its tip. The present invention is applicable to the field of equipment for producing a plasma.
摘要:
Detection accuracy of a power of a progressive wave and detection accuracy of a power of a reflection wave can be improved. In a plasma processing apparatus, a first directional coupler is provided in a first waveguide which is configured to connect a microwave generating unit and a first port of a circulator. A first detector is connected to the first directional coupler. A second port of the circulator is connected to a plasma generating unit via a second waveguide. Further, a second directional coupler is provided in a third waveguide which is configured to connect a third port of the circulator and a dummy load. A second detector is connected to the second directional coupler.
摘要:
Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (>150 W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.
摘要:
The invention relates to an apparatus for performing a plasma chemical vapour deposition process. The apparatus comprises a mainly cylindrical resonator being provided with an outer cylindrical wall enclosing a resonant cavity having a substantially rotational symmetric shape with respect to a cylindrical axis. The resonator further includes side wall portions bounding the resonant cavity in opposite cylindrical axis directions. In addition, the apparatus comprises a microwave guide extending through the outer cylindrical wall into the resonant cavity. The length of the resonant cavity in the cylindrical direction varies as a function of the radial distance to the cylindrical axis.
摘要:
To provide a microwave plasma-treating apparatus which is capable of generating plasma having a high degree of uniformity of density and a high density for executing large-quantity and high-speed processing, capable of generating plasma of a large area, and capable of preventing dielectric windows from being thermally broken despite the apparatus being operated with large electric power for extended periods of time. The microwave plasma-treating apparatus includes a waveguide arranged to feed microwave electric power, a plurality of microwave coupling holes formed in the waveguide in the axial direction thereof, a dielectric member of a piece of plate capable of transmitting microwaves arranged in the waveguide in the axial direction thereof under the microwave coupling holes, a gap formed between the plurality of microwave coupling holes and the dielectric member, and a cooling member for cooling the dielectric member. Desirably, the microwave coupling holes have an annular shape.
摘要:
A micro wave plasma processing device, wherein a tapered surface for relieving a variation in impedance and a member having an intermediate dielectric constant are installed between a micro wave feeding wave guide and a micro wave antenna, whereby the formation of reflected wave at the connection part between the micro wave feeding wave guide and the micro wave antenna can be suppressed to increase a power feeding efficiency and suppress discharge so as to stabilize the formation of plasma in the plasma processing device.
摘要:
An ECR plasma source of the invention is constructed of: a plasma generating chamber (10) having a generally rectangular section in a plane normal to a plasma flow; magnetic coils (20, 21) wound in generally rectangular shapes in a plane normal to the plasma flow; and a direct introduction type or branching and binding introduction type waveguide (30) or microwave cavity resonator. Microwaves are transmitted into the plasma generating chamber (10) from a plurality of openings (34) which are formed in such side faces in the waveguide (30) or the microwave cavity resonator as correspond to in-phase microwave portions. Moreover, an ECR plasma device comprises the aforementioned ECR plasma source and a sample moving mechanism for moving a large-sized sample.