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    Method for forming a pattern having a fine gap.
    3.
    发明公开
    Method for forming a pattern having a fine gap. 失效
    制造具有微细间隙的图案的方法。

    公开(公告)号：EP0147322A2

    公开(公告)日：1985-07-03

    申请号：EP84402694.8

    申请日：1984-12-21

    申请人： FUJITSU LIMITED

    发明人： Majima, Teiji ,  Watanabe, Hiromichi

    IPC分类号： H01L21/00

    CPC分类号： H01L21/0337 ,  H01F41/34 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0338

    摘要： A method is disclosed of forming a fine pattern on a substrate (1), in which an etching mask pattern (B) is formed on a layer of material (A) of a pattern to be formed, an overlying layer (C) is deposited on a pattern material layer (A) and the mask pattern (B), and thereafter, the overlying layer and the pattern material layer are etched by ion etching. This method makes it possible, due to the pattern-widening effect caused by the deposition of the overlying layer and by ion etching, to form a pattern having a gap smaller than 0.5 um or a continuous-disk pattern having a period of 2 um or less by photolithography having a 1 um resolution. It is also possible to form a pattern adapted to enable an easy planing process, by utilizing the difference in etching rate between the mask pattern and the overlying layer. An apparatus used for carrying out the pattern forming method comprises film layer forming means and ion etching means, whereby the overlying layer forming step and the ion etching step can be successively performed by using one and the same apparatus.

    Etching method
    6.
    发明公开
    Etching method 审中-公开
    蚀刻方法

    公开(公告)号：EP1049143A3

    公开(公告)日：2000-12-27

    申请号：EP00303661.3

    申请日：2000-05-02

    申请人： LG ELECTRONICS INC.

    发明人： Song, Ki Chang ,  Bu, Jong Uk ,  Park, Chil Keun

    IPC分类号： H01L21/033 ,  H01L21/308

    CPC分类号： H01L21/3085 ,  H01L21/0334 ,  H01L21/0335

    摘要： Etching method applicable to a semiconductor device fabrication and an MEMS(Micro-Electro-Mechanical System) process, including the steps of forming an etching mask on a substrate, forming a plurality of patterns in the etching mask corresponding to depths of the plurality of trenches; and etching the substrate using the etching mask having the plurality of patterns formed therein, whereby eliminating an alignment error in respective photolithography, that permits to form a precise structure, simplify a fabrication process, and reduce a production cost.

    摘要翻译： 包括以下步骤：适用于半导体器件制造和MEMS（微机电系统）工艺的蚀刻方法，包括以下步骤：在衬底上形成蚀刻掩模;在与多个沟槽的深度对应的蚀刻掩模中形成多个图案 ; 以及使用其中形成有多个图案的蚀刻掩模蚀刻衬底，由此消除各光刻中的对准误差，这允许形成精确的结构，简化制造工艺并降低生产成本。

    Masking method for semiconductor devices with high surface topography
    9.
    发明公开
    Masking method for semiconductor devices with high surface topography 有权
    AbdeckungsverfahrenfürHalbleiterbauelemente mit hoherOberflächentopographie

    公开(公告)号：EP2765456A1

    公开(公告)日：2014-08-13

    申请号：EP13154625.1

    申请日：2013-02-08

    申请人： ams AG

    发明人： Koppitsch, Günther ,  Stückler, Ewald ,  Rohracher, Karl ,  Teva, Jordi

    IPC分类号： G03F7/09 ,  H05K3/00

    CPC分类号： H01L21/76882 ,  G03F7/094 ,  H01L21/0335 ,  H01L21/7685 ,  H01L21/76883 ,  H01L21/76898

    摘要： The method comprises the steps of providing a semiconductor body or substrate (1) with a recess or trench (2) in a main surface (10), applying a mask (3) on the main surface, the mask covering the recess or trench, so that the walls and bottom of the recess or trench and the mask together enclose a cavity (4), which is filled with a gas, and forming at least one opening (5) in the mask at a distance from the recess or trench, the distance (6) being adapted to allow the gas to escape from the cavity via the opening when the gas pressure exceeds an external pressure.

    摘要翻译： 该方法包括以下步骤：在主表面（10）中提供具有凹槽或沟槽（2）的半导体本体或衬底（1），在主表面上施加掩模（3），覆盖凹部或沟槽的掩模， 使得凹部或沟槽和面罩的壁和底部一起包围填充有气体的空腔（4），并且在距离凹槽或沟槽一定距离处的掩模中形成至少一个开口（5） 所述距离（6）适于当所述气体压力超过外部压力时允许所述气体经由所述开口从所述空腔逸出。

    Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure
    10.
    发明公开
    Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure 审中-公开
    固态成像装置及其制造方法，防反射结构的成像装置及其制造方法

    公开(公告)号：EP2237318A2

    公开(公告)日：2010-10-06

    申请号：EP10157325.1

    申请日：2010-03-23

    申请人： Sony Corporation

    发明人： Maeda, Kensaku ,  Koike, Kaoru ,  Sasaki, Tohru ,  Tatsumi, Tetsuya

    IPC分类号： H01L27/146 ,  H01L31/0216 ,  H01L31/0236

    CPC分类号： G02B1/118 ,  G02F1/133528 ,  H01L21/0335 ,  H01L21/31144 ,  H01L27/1462 ,  H01L27/14685 ,  H01L31/02363 ,  Y02E10/50

    摘要： A fabrication method of an anti-reflection structure includes the steps of: forming a resin film having micro-particles dispersed therein on a surface of a substrate; forming a protrusion dummy pattern on the resin film by etching the resin film using the micro-particles in the resin film as a mask while gradually etching the micro-particles; and forming a protrusion pattern on the surface of the substrate by etching back the surface of the substrate together with the resin film having the protrusion dummy pattern formed thereon, and transferring a surface shape of the protrusion dummy pattern formed on a surface of the resin film to the surface of the substrate.

    摘要翻译： 防反射结构的制作方法包括以下步骤：在其中形成分散在基材的表面上的微细粒子的树脂具有薄膜; 通过薄膜在树脂薄膜使用-微细粒子蚀刻所述树脂形成在所述树脂突起假图案膜作为掩模，同时逐渐地蚀刻所述微细粒子; 并通过与树脂膜具有突起假图案形成在其上，并传递环形成的树脂成膜的表面上的突起假图案的表面形状的衬底的表面中蚀刻背面一起形成在基板的表面上形成突起图案 于基板的表面上。