公开(公告)号：EP2324492A2

公开(公告)日：2011-05-25

申请号：EP09812301.1

申请日：2009-09-04

申请人： CBrite Inc.

发明人： SHIEH, Chan-long ,  YU, Gang

IPC分类号： H01L21/322 ,  H01L31/00

CPC分类号： H01L29/04 ,  H01L21/00 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/16 ,  H01L21/28556 ,  H01L27/1214 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/5012

摘要： A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.

公开(公告)号：EP1324398A2

公开(公告)日：2003-07-02

申请号：EP02258551.7

申请日：2002-12-11

申请人： National Institute of Advanced Industrial Science and Technology

发明人： Iwata, Kakuya

IPC分类号： H01L31/18 ,  H01L33/00

CPC分类号： H01L33/28 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02614 ,  H01L21/02628 ,  H01L21/16 ,  H01L31/02963 ,  H01L31/18 ,  H01L31/1836 ,  Y02E10/50

摘要： An organometal having as molecular structural elements both a semiconductor anion atom and cation atom is applied to a substrate and reacted under heating to obtain p-type and n-type semiconductor thin films whose p-n junctions enable fabrication of a semiconductor device, light-emitting element or solar cell.

摘要翻译： 将具有半导体阴离子原子和阳离子原子的分子结构元素的有机金属加到衬底上并在加热下反应以获得p型和n型金属氧化物半导体薄膜，其pn结能够制造半导体器件， 发光元件或太阳能电池。

公开(公告)号：EP2324492A4

公开(公告)日：2015-04-22

申请号：EP09812301

申请日：2009-09-04

申请人： CBRITE INC

发明人： SHIEH CHAN-LONG ,  YU GANG

IPC分类号： H01L21/36 ,  H01L29/786

CPC分类号： H01L29/04 ,  H01L21/00 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/16 ,  H01L21/28556 ,  H01L27/1214 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/5012

公开(公告)号：EP1324398A3

公开(公告)日：2007-05-16

申请号：EP02258551.7

申请日：2002-12-11

申请人： National Institute of Advanced Industrial Science and Technology

发明人： Iwata, Kakuya

IPC分类号： H01L31/18 ,  H01L33/00

CPC分类号： H01L33/28 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02614 ,  H01L21/02628 ,  H01L21/16 ,  H01L31/02963 ,  H01L31/18 ,  H01L31/1836 ,  Y02E10/50

摘要： An organometal having as molecular structural elements both a semiconductor anion atom and cation atom is applied to a substrate and reacted under heating to obtain p-type and n-type metal oxide semiconductor thin films whose p-n junctions enable fabrication of a semiconductor device, light-emitting element or solar cell.