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    Semiconductor laser
    3.
    发明授权
    Semiconductor laser 有权
    半导体激光器

    公开(公告)号：EP1076388B1

    公开(公告)日：2009-03-11

    申请号：EP00902891.1

    申请日：2000-02-09

    Applicant: FURUKAWA ELECTRIC CO., LTD.

    Inventor： MUKAIHARA, Toshikazu c/o The Furukawa El. Co., Ltd ,  YAMAGUCHI, Takeharu ,  KASUKAWA, Akihiko, The Furukawa Electric Co., Ltd.

    IPC: H01S5/20

    CPC classification number: B82Y20/00 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/34313 ,  H01S5/34353 ,  H01S2301/02

    Abstract: A semiconductor light-emitting device having a construction for producing a stable optical output and a longitudinal multimode oscillation spectrum with respect to the injection current. A semiconductor light-emitting device (200) is an InGaAs edge-emission light-emitting laser having a 980-nm band and has a multilayer structure including an n-AlGaAs cladding layer (110), an active layer (120), a p-AlGaAs cladding layer (130) and a GaAs cap layer (140), which are epitaxially grown sequentially on an n-GaAs substrate (100). The active layer has a double quantum well two-layer structure composed of an InGaAs layer and a GaAs layer. The upper part of the cladding layer (130) and the cap layer (140) are formed into a mesa stripe shape having a width of 4 νm, and a passivation film (150) of an SiN film is formed all over the surface excepting the top of the mesa (the top of the cap layer). The back (100a) of the substrate of the InGaAs laser is processed into an optically irregularly reflecting face having a continuous irregularity the surface roughness (Rq: root mean square roughness) of which is 100 nm.

    BROADBAND LIGHT EMITTING DEVICE
    4.
    发明公开
    BROADBAND LIGHT EMITTING DEVICE 有权
    宽带超辐射

    公开(公告)号：EP1766694A2

    公开(公告)日：2007-03-28

    申请号：EP05746788.8

    申请日：2005-06-10

    Applicant: EXALOS AG

    Inventor： LI, Lianhe ,  FIORE, Andrea ,  OCCHI, Lorenzo ,  VELEZ, Christian

    IPC: H01L33/00 ,  H01S5/34

    CPC classification number: H01L33/0045 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/08 ,  H01S5/14 ,  H01S5/2231 ,  H01S5/3412 ,  H01S5/34313 ,  H01S5/34353

    Abstract: The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor heterostructure forming a PN junction and a waveguide. The semiconductor heterostructure includes a gain region (4) with a contact means (7, 8) for biasing the PN junction so as to produce light emission including stimulated emission from an active zone of the gain region (4), and in the active zone a plurality of quantum dot layers (11.1, 11.2), each quantum dot layer (11) made up of a plurality of quantum dots and a plurality of adjoining layers (13.1, 13.2), each adjoining layer (13) adjacent to one of said quantum dot layers (11). The material composition or a deposition parameter of at least two adjoining layers (13) is different. This ensures an enhanced emission spectral width.

    SEMICONDUCTOR OPTICAL ELEMENT HAVING WIDE LIGHT SPECTRUM EMISSION CHARACTERISTICS, METHOD FOR FABRICATING THE SAME, AND EXTERNAL RESONATOR TYPE SEMICONDUCTOR LASER
    8.
    发明公开
    SEMICONDUCTOR OPTICAL ELEMENT HAVING WIDE LIGHT SPECTRUM EMISSION CHARACTERISTICS, METHOD FOR FABRICATING THE SAME, AND EXTERNAL RESONATOR TYPE SEMICONDUCTOR LASER 审中-公开
    具有发光特性范围广，工艺用于生产具有外部谐振器的半导体激光式光半导体元件

    公开(公告)号：EP1840978A1

    公开(公告)日：2007-10-03

    申请号：EP06711830.7

    申请日：2006-01-17

    Applicant: Anritsu Corporation

    Inventor： SUZUKI, Tetsuya, c/o Int. Prop. Prom. Dept ,  YOSHIDAYA, Hiroaki, c/o Int. Prop. Prom. Dept ,  MURAKAMI, Kiyokazu, c/o Int. Prop. Prom. Dept

    IPC: H01L33/00 ,  H01S5/343

    CPC classification number: H01S5/34313 ,  B82Y20/00 ,  H01L33/0045 ,  H01S5/0602 ,  H01S5/141 ,  H01S5/168 ,  H01S5/34353 ,  H01S5/4087 ,  H01S5/50

    Abstract: A semiconductor optical device has a semiconductor substrate, and an active layer which is formed above the semiconductor substrate, the active layer having a plurality of quantum wells formed from a plurality of barrier layers and a plurality of well layers sandwiched among the plurality of barrier layers. At least one well layer of the plurality of well layers is formed from an In xa Ga (1-xa) As film, and a composition ratio xa of the In takes any one value within a range from approximately 0.05 to approximately 0.20. Accordingly, the semiconductor optical device is formed as a strained well layer in which lattice distortion bought about in the well layer takes any one value within a range from approximately 0.35% to approximately 1.5%, and the strained well layer is formed so as to have a bandgap wavelength different from those of the other well layers. Consequently, the semiconductor optical device is configured capable of representing, as an optical spectral characteristic, a broad optical spectral characteristic whose center wavelength is from approximately 800 nm to approximately 850 nm, and which has a spectral half bandwidth greater than or equal to a predetermined value.

    Abstract translation: 一种半导体光学器件具有半导体衬底和有源层上的所有其在半导体基板的上方形成，具有从阻挡层上的多个和夹在阻挡层的多元性中阱层形成的多个量子阱的多个有源层 ， 阱层的多个至少一个阱层由在XA形成在镓（1-X A）如电影，并且In的组分比x取范围内的任何一个值从12:05至大约0:20，大约。 因此，半导体光学器件形成为其中晶格畸变购买了大约在阱层取任何一个值的范围内大约为0.35％至约1.5％，和应变阱层被形成为具有应变阱层 的带隙波长与其它阱层的不同。 因此，半导体光学设备被配置能够表示的，作为光谱特性，宽的光谱特性，其中心波长为从大约800nm至大约850纳米，并且其具有的光谱半值宽度大于或等于预定 值。

    Monolithic semicondutor laser and method of manufacturing the same
    9.
    发明公开
    Monolithic semicondutor laser and method of manufacturing the same 有权
    Monolithischer Halbleiterlaser und Herstellungsverfahrendafür

    公开(公告)号：EP1788679A3

    公开(公告)日：2007-07-04

    申请号：EP07002825.3

    申请日：2004-09-30

    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA

    Inventor： Nishida, Takehiro, c/o Mitsubishi Denki Kabushiki Kaisha ,  Miyashita, Motoharu, c/o Mitsubishi Denki Kabushiki Kaisha ,  Yamaguchi, Tsutomu, c/o Mitsubishi Denki Kabushiki Kaisha

    IPC: H01S5/40 ,  H01S5/323 ,  H01S5/343

    CPC classification number: B82Y20/00 ,  H01S5/2063 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/34353 ,  H01S5/4031 ,  H01S5/4087

    Abstract: A monolithic semiconductor laser structure (200) having plural semiconductor lasers (201,202) having different emission wavelengths from each other, including: a semiconductor substrate (1); a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers (21,24) disposed above and below a first active layer (22); and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers (31,24) disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above the first active layer are of approximately the same semiconductor materials as the second clad layers above the second active layer.

    Abstract translation: 一种单片半导体激光器，具有：具有彼此不同的发光波长的多个半导体激光器，包括：半导体基板（1）; 第一双异质结构（101），其形成在所述半导体衬底上的第一区域内，并且具有设置在第一有源层（3）上方和下方的第一覆层（2,4）; 以及形成在所述半导体衬底上的第二区域内并且具有设置在第二有源层（13）上方和下方的第二覆盖层（2,4）的第二双异质结构（102）。 第一和第二有源层由彼此不同的半导体材料制成。 第一有源层之上和之下的第一覆盖层具有大致相同的半导体材料，并且第二有源层之上和之下的第二覆盖层具有大致相同的半导体材料。

    Monolithic semicondutor laser and method of manufacturing the same
    10.
    发明公开
    Monolithic semicondutor laser and method of manufacturing the same 有权
    单片半导体激光器及其制造方法

    公开(公告)号：EP1788679A2

    公开(公告)日：2007-05-23

    申请号：EP07002825.3

    申请日：2004-09-30

    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA

    Inventor： Nishida, Takehiro, c/o Mitsubishi Denki Kabushiki Kaisha ,  Miyashita, Motoharu, c/o Mitsubishi Denki Kabushiki Kaisha ,  Yamaguchi, Tsutomu, c/o Mitsubishi Denki Kabushiki Kaisha

    IPC: H01S5/40 ,  H01S5/343

    CPC classification number: B82Y20/00 ,  H01S5/2063 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/34353 ,  H01S5/4031 ,  H01S5/4087

    Abstract: A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.

    Abstract translation: 一种单片半导体激光器，具有彼此具有不同发射波长的多个半导体激光器，包括：半导体衬底; 第一双异质结构，形成在所述半导体衬底上的第一区域内并且具有设置在第一有源层上方和下方的第一覆层; 以及第二双异质结构，形成在半导体衬底上的第二区域内并具有设置在第二有源层上方和下方的第二包覆层。 第一和第二有源层由彼此不同的半导体材料制成。 第一有源层上方和下方的第一覆盖层具有大致相同的半导体材料，并且第二有源层上方和下方的第二覆盖层具有大致相同的半导体材料。

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