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公开(公告)号：EP4359365A1
公开(公告)日：2024-05-01
申请号：EP22740948.9
申请日：2022-06-20
申请人： Safran Ceramics , Centre National de la Recherche Scientifique , UNIVERSITE DE BORDEAUX , Institut Polytechnique de Bordeaux
CPC分类号： C04B35/80 , C04B41/5338 , C04B2235/524420130101 , C04B35/62863 , C04B35/62873 , C04B35/62897 , C04B35/62865 , C04B35/565 , C04B35/573 , C04B35/01 , C04B35/58 , C04B41/009
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公开(公告)号：EP4249453A1
公开(公告)日：2023-09-27
申请号：EP23184344.2
申请日：2018-12-20
IPC分类号： C04B35/628 , C23C16/48 , C23C16/54 , C23C16/32 , C23C16/34 , C23C16/448 , C23C16/46 , C23C18/12 , C23C18/14
摘要： L'invention concerne un procédé de dépôt d'un revêtement sur une fibre continue (150) en carbone ou en carbure de silicium à partir d'un précurseur du revêtement (140), le procédé comprenant au moins le chauffage d'un segment (151) de la fibre en présence du précurseur du revêtement dans un champ micro-ondes de façon à porter la surface du segment à une température permettant la formation du revêtement sur le segment à partir du précurseur du revêtement. Le segment (251) de fibre (250) est en présence d'une phase gazeuse du précurseur du revêtement (240), le revêtement étant formé par infiltration chimique en phase gazeuse, le segment (351) de fibre (350) est en présence d'une phase supercritique du précurseur du revêtement (340) et le revêtement est formé par dépôt chimique en phase supercritique.
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公开(公告)号：EP3732151A1
公开(公告)日：2020-11-04
申请号：EP18842444.4
申请日：2018-12-20
IPC分类号： C04B35/628 , C23C16/48 , C23C16/54
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公开(公告)号：EP4359364A1
公开(公告)日：2024-05-01
申请号：EP22741330.9
申请日：2022-06-13
申请人： Safran Ceramics , Centre National de la Recherche Scientifique , UNIVERSITE DE BORDEAUX , Institut Polytechnique de Bordeaux
IPC分类号： C04B35/628 , D01D5/00 , D01F1/00
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5.发明授权PROCEDE DE FABRICATION DE MATERIAU COMPOSITE A MATRICE CARBURE 有权VERFAHREN ZUR HERSTELLUNG EINES VERBUNDWERKSTOFFS MIT CARBIDMATRIX
公开(公告)号：EP2986582B1
公开(公告)日：2017-03-29
申请号：EP14721469.6
申请日：2014-04-10
申请人： Safran Ceramics , Commissariat à l'Energie Atomique et aux Energies Alternatives , Centre National de la Recherche Scientifique (C.N.R.S.)
IPC分类号： C04B35/56 , C04B35/565 , C04B35/573 , C04B35/628 , C04B35/65 , C04B35/80 , C04B35/83 , C04B35/563
CPC分类号： C23C16/0272 , C04B35/5607 , C04B35/5611 , C04B35/5622 , C04B35/563 , C04B35/565 , C04B35/573 , C04B35/62868 , C04B35/62873 , C04B35/62884 , C04B35/65 , C04B35/806 , C04B35/83 , C04B2235/3251 , C04B2235/422 , C04B2235/48 , C04B2235/5224 , C04B2235/5244 , C04B2235/5248 , C04B2235/5252 , C04B2235/5256 , C04B2235/5436 , C04B2235/5445 , C04B2235/614 , C04B2235/616 , C04B2235/80 , C23C16/0209 , C23C16/32 , C23C16/325 , C23C16/34 , C23C16/45557
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公开(公告)号：EP2986582A2
公开(公告)日：2016-02-24
申请号：EP14721469.6
申请日：2014-04-10
申请人： HERAKLES , Commissariat à l'Energie Atomique et aux Energies Alternatives , Centre National de la Recherche Scientifique (CNRS)
IPC分类号： C04B35/56 , C04B35/565 , C04B35/573 , C04B35/628 , C04B35/65 , C04B35/80 , C04B35/83 , C04B35/563
CPC分类号： C23C16/0272 , C04B35/5607 , C04B35/5611 , C04B35/5622 , C04B35/563 , C04B35/565 , C04B35/573 , C04B35/62868 , C04B35/62873 , C04B35/62884 , C04B35/65 , C04B35/806 , C04B35/83 , C04B2235/3251 , C04B2235/422 , C04B2235/48 , C04B2235/5224 , C04B2235/5244 , C04B2235/5248 , C04B2235/5252 , C04B2235/5256 , C04B2235/5436 , C04B2235/5445 , C04B2235/614 , C04B2235/616 , C04B2235/80 , C23C16/0209 , C23C16/32 , C23C16/325 , C23C16/34 , C23C16/45557
摘要： A method for densifying a porous substrate (50) by means of a matrix, said method comprising the steps of: - fractionation of the porosity present in the porous substrate in such a way as to form, in said substrate, a microporosity network, said fractionation being carried out with a filling composition comprising at least one carbon phase or one carbide phase accessible via the microporosity network, - reactive gaseous-phase chemical infiltration of the microporosity network formed by the filling material, said infiltration being carried out with a reactive gaseous composition free of carbon and comprising at least one element capable of reacting with the carbon of the filling composition in order to form a carbide (53).
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公开(公告)号：EP2373596B1
公开(公告)日：2014-08-13
申请号：EP09804294.8
申请日：2009-12-15
IPC分类号： C04B35/628 , C04B41/45 , C04B41/91
CPC分类号： C04B35/56 , C04B35/565 , C04B35/62844 , C04B35/62873 , C04B35/62884 , C04B2235/46 , C04B2235/524 , C04B2235/5244
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公开(公告)号：EP2373596A1
公开(公告)日：2011-10-12
申请号：EP09804294.8
申请日：2009-12-15
IPC分类号： C04B35/628 , C04B41/45 , C04B41/91
CPC分类号： C04B35/56 , C04B35/565 , C04B35/62844 , C04B35/62873 , C04B35/62884 , C04B2235/46 , C04B2235/524 , C04B2235/5244
摘要： The invention relates to a method for processing metal carbide ceramic fibres (10), including a first reactive gaseous-phase thermal processing (S1) of the halogen type producing a superficial layer (12) mainly containing carbon by chemical conversion of the surface fibres, and a second reactive gaseous-phase thermal processing (S2) carried out with at least one second reactive gas for removing the superficial layer formed at the surface during the chemical conversion.
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公开(公告)号：EP4107306A1
公开(公告)日：2022-12-28
申请号：EP21709076.0
申请日：2021-02-10
申请人： Safran Ceramics
发明人： GOUJARD, Stéphane, Roger, André , DELCAMP, Adrien , DESCAMPS, Cédric , TESSON, Thierry, Guy, Xavier , LELEU, Charles
IPC分类号： C23C16/02 , C23C16/04 , C23C16/32 , C23C16/455 , C23C16/458 , C04B35/80 , C04B35/628 , C04B35/565
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10.发明公开
公开(公告)号：EP3377669A1
公开(公告)日：2018-09-26
申请号：EP16809993.5
申请日：2016-11-18
申请人： Safran Ceramics
CPC分类号： D06M11/58 , C23C16/342 , C23C16/4412 , C23C16/45502 , C23C16/545 , D06B3/045 , D06M2101/40 , D10B2101/08 , D10B2101/12 , D10B2101/16
摘要： The invention relates to a device (1) for the coating of one or more wires (2) using a vapour phase deposition method, said device comprising at least: a treatment chamber (4) extending along a longitudinal axis (X) and comprising at least one treatment zone (4a) located between an internal circumferential wall (5) and an external circumferential wall (7) and in which at least one wire (2) is intended to be coated using a vapour phase deposition method; a conveyor system designed to transport said at least one wire (2) through the treatment zone (4a); an injection device designed to inject a treatment gas phase (10a) into the treatment zone (4a) through at least one inlet port (7a) provided in the internal (5) or external (7) circumferential wall; a discharge device designed to discharge the residual gas phase (11a) from the treatment zone (4a) through at least one outlet port (8a) provided in the internal (5) or external (7) circumferential wall, said inlet port (7a) and said outlet port (8a) being located in the same plane (P) perpendicular to the longitudinal axis (X) of the treatment chamber (4) and being offset in the circumferential direction (C) of the treatment chamber (4).
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