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公开(公告)号：EP4060667B1
公开(公告)日：2024-10-23
申请号：EP22162538.7
申请日：2022-03-16
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2.发明授权
公开(公告)号：EP4246157B1
公开(公告)日：2024-09-18
申请号：EP22162243.4
申请日：2022-03-15
IPC分类号： G01R31/3185 , G06F11/36 , G06F21/71 , G06F21/78 , G11C17/18 , G06F21/57 , G11C7/24 , H04L41/0806 , H04L41/28
CPC分类号： G06F21/572 , G06F21/71 , G06F21/78 , G06F11/3656 , H04L41/0806 , H04L41/28 , G11C7/24
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3.发明公开
公开(公告)号：EP4386758A1
公开(公告)日：2024-06-19
申请号：EP23217046.4
申请日：2023-12-15
发明人： HSIEH, E Ray
摘要： The present disclosure provides a one-time programmable memory, which includes a one-time programmable (OTP) diode and a control field effect transistor (FET). One end of the OTP diode is electrically connected to a source line. The control FET includes a gate, a first source/drain and a second source/drain, the gate of the control FET is electrically connected to a word line, the first source/drain of the control FET is electrically connected to a bit line, and the second source/drain of the control FET is electrically connected to another of the OTP diode.
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公开(公告)号：EP4181141A1
公开(公告)日：2023-05-17
申请号：EP22184860.9
申请日：2022-07-14
发明人： CHANG, Chia-Fu , WANG, Po-Ping , PENG, Jen-Yu
摘要： A program control circuit for an antifuse-type one time programming memory cell array is provided. When the program action is performed, the program control circuit monitors the program current from the memory cell in real time and increases the program voltage at proper time. When the program control circuit judges that the program current generated by the memory cell is sufficient, the program control circuit confirms that the program action is completed.
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公开(公告)号：EP4179535A1
公开(公告)日：2023-05-17
申请号：EP21736830.7
申请日：2021-06-08
发明人： LEE, Hochul , KOTA, Anil Chowdary , SRIKANTH, Anne
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7.发明公开
公开(公告)号：EP4115426A1
公开(公告)日：2023-01-11
申请号：EP21714521.8
申请日：2021-03-03
发明人： LEE, Hochul , KOTA, Anil Chowdary , KIM, Keejong
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8.发明公开
公开(公告)号：EP4060670A1
公开(公告)日：2022-09-21
申请号：EP22157204.3
申请日：2022-02-17
发明人： Törnqvist, Vesa , Salo, Teemu
摘要： The present invention relates to the field of digital memory, and in particular to a multiple-time programmable (MTP) memory employing error correction codes (ECC), the MTP memory being made up of one-time programmable (OTP) memory modules. Pointers to the memory address of currently in-use OTP memory blocks in use for each virtual MTP memory block are stored in OTP memory with an error correcting code. The pointers encode the memory addresses according to a scheme that ensure that only bit changes in a single direction are required in both the pointer data and the error correction code when the memory address is incremented.
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公开(公告)号：EP3916730A1
公开(公告)日：2021-12-01
申请号：EP21175167.2
申请日：2021-05-21
摘要： The present disclosure relates to a method for writing into a one-time programmable memory (216) of an integrated circuit (200), the method comprising:
- attempting, by a memory control circuit (306) of the integrated circuit (200), to write data in at least one first register of the one-time programmable memory (216);
- verifying, by the memory control circuit (306), whether the data has been correctly written in the at least one first register; and
- in case the data has not been correctly written in the at least one first register, attempting, by the memory control circuit (306), to write the data in at least one second register of the one-time programmable memory (216). -
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