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公开(公告)号：EP4055208A1
公开(公告)日：2022-09-14
申请号：EP20800167.7
申请日：2020-11-05
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公开(公告)号：EP3906284A1
公开(公告)日：2021-11-10
申请号：EP19907707.4
申请日：2019-12-27
申请人： CMC Materials, Inc.
发明人： ZHANG, Na , DOCKERY, Kevin P. , LIU, Zhao , IVANOV, Roman A.
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公开(公告)号：EP1979431B1
公开(公告)日：2018-01-10
申请号：EP07717147.8
申请日：2007-01-31
发明人： DYSARD, Jeffrey C/o Legal Department, Cabot Microelectronics Corporation , FEENEY, Paul C/o Legal Department, Cabot Microelectronics Corporation , ANJUR, Sriram C/o Legal Department, Cabot Microelectronics Corporation
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L45/06 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.
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公开(公告)号：EP3201281A1
公开(公告)日：2017-08-09
申请号：EP15757217.3
申请日：2015-08-27
申请人： Poligrat GmbH
摘要： The invention relates to a method for the wet-chemical polishing of molded zinc parts, the molded parts being brought in contact with an acid solution and said acid solution containing only sulfuric acid and phosphoric acid as the strong acids.
摘要翻译： 本发明涉及一种用于模制锌部件的湿化学抛光的方法，所述模制部件与酸溶液接触并且所述酸溶液仅含有硫酸和磷酸作为强酸。
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公开(公告)号：EP1211717B1
公开(公告)日：2016-04-13
申请号：EP00953466.0
申请日：2000-08-17
IPC分类号： H01L21/321 , H01L21/768 , C09G1/02 , C09K3/14 , C23F3/06
CPC分类号： C03C15/00 , C09G1/02 , C09K3/1463 , C23F3/06 , H01L21/3212 , H01L21/7684
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公开(公告)号：EP2852650A4
公开(公告)日：2016-02-24
申请号：EP13793438
申请日：2013-05-21
发明人： JIN WIECHANG , PARKER JOHN , REMSEN ELIZABETH
IPC分类号： C09K3/14 , C09G1/02 , C23F3/06 , H01L21/3105 , H01L21/321
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/31053 , H01L21/32125
摘要： The invention provides a chemical-mechanical polishing composition containing zirconia particles, a modifying agent that adheres to the zirconia particles, an organic acid, and water, as well as a method of using such a polishing composition to polish substrates and a method of using a polishing composition comprising zirconia particles, an organic acid, an oxidizing agent, and water to polishing substrates containing metal and oxide-based dielectric materials.
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8.发明授权BRIGHTENING/PASSIVATING METAL SURFACES WITHOUT HAZARD FROM EMISSIONS OF OXIDES OF NITROGEN 有权GLÄNZUNG和钝化表面上，而风险氮氧化物排放
公开(公告)号：EP1242651B1
公开(公告)日：2009-02-25
申请号：EP00985228.6
申请日：2000-12-21
CPC分类号： C01B15/037 , C23C22/10 , C23C22/50 , C23F3/06 , C23G1/083
摘要： A chromium- and nitrogen-free brightening and passivating treatment for metal surfaces, particularly iron and steel, comprises: at least one acid; at least one substance containing a peroxy moiety; and at least one organic substance selected from the group consisting of: molecules that contain both at least one ether moiety and at least one hydroxyl moiety; molecules that contain at least two ether moieties; and molecules that contain in each molecule both at least one ether moiety and one nitrogen atom that is covalently bonded to at least three carbon atoms. Preferably part of the acid contains phosphorus, which has been found to act synergistically with the organic substance to stabilize peroxy compounds against decomposition, particularly in the presence of metal ions.
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公开(公告)号：EP1797152A1
公开(公告)日：2007-06-20
申请号：EP05767671.0
申请日：2005-07-01
发明人： DE REGE THESAURO, Francesco, Cabot Microel. Corp. , BRUSIC, Vlasic, Cabot Microel. Corp. , THOMPSON, Christopher, Cabot Microel. Corp. , BAYER, Benjamin, Cabot Microel. Corp.
IPC分类号： C09G1/02 , C09K3/14 , C23F3/06 , H01L21/321
CPC分类号： C09G1/02 , C23F3/00 , H01L21/3212 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and α-hydroxycarbonyl compounds.
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10.发明公开Composition and method for improved adhesion of polymeric materials to copper or copper alloy surfaces 有权组合物和方法，用于提高与铜或铜合金表面的聚合物材料的粘附
公开(公告)号：EP1780309A1
公开(公告)日：2007-05-02
申请号：EP05023278.4
申请日：2005-10-25
CPC分类号： H05K3/383 , C23F1/18 , C23F1/46 , C23F3/06 , C23G1/103 , H05K2203/0796 , H05K2203/124
摘要： The present invention relates to a method for treating copper or copper alloy surfaces for tight bonding to polymeric substrates, for example solder masks found in multilayer printed circuit boards. The substrate generally is a semiconductor-device, a lead frame or a printed circuit board.
摘要翻译： 本发明涉及一种用于处理铜或铜合金表面进行紧密结合到聚合物基片，对于多层印刷电路板实施例发现焊料掩模的方法。 基板基因的反弹是半导体器件，引线框架或印刷电路板。
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