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公开(公告)号：EP3885468B1
公开(公告)日：2024-08-14
申请号：EP19886247.6
申请日：2019-11-19
IPC: C23F1/18 , C23F1/02 , H01L21/308 , H01L21/3213 , H01L21/768 , H01L23/00
CPC classification number: C23F1/18 , H01L21/32134 , C23F1/02 , H01L21/76898 , H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/1302220130101 , H01L2224/0361420130101 , H01L2224/0516620130101 , H01L2224/0564720130101 , H01L2224/0507320130101 , H01L2224/114720130101 , H01L2224/1315520130101 , H01L2224/1311120130101 , H01L2224/1314420130101 , H01L2224/1314720130101 , H01L2224/1146220130101 , H01L2224/0391220130101 , H01L2224/040120130101
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2.发明公开
公开(公告)号：EP3124650A4
公开(公告)日：2017-11-15
申请号：EP14886931
申请日：2014-09-08
Applicant: HITACHI LTD
Inventor： KAWAMURA TOSHINORI , TAMURA AKINORI , NAKANO HIROSHI , KITO KAZUAKI
CPC classification number: B24C1/06 , C21D7/06 , C23F1/18 , C23F1/28 , F28D7/16 , F28F13/185 , F28F19/06 , F28F21/083
Abstract: In a surface treatment method for stainless steel, a stainless-steel surface fine-structure forming method for forming a fine irregular structure (roughened surface) having a high surface area is provided. A stainless-steel surface treatment method according to the present invention is for forming the fine structure on the surface of stainless steel. The method includes: a first step of performing grain refining treatment for refining crystal grains in the surface of stainless steel; and a second step performed, after the first step, for roughening etching the surface of stainless steel with an etching solution.
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3.发明公开GRAPHENE AND POLYMER-FREE METHOD FOR TRANSFERRING CVD GROWN GRAPHENE ONTO HYDROPHOBIC SUBSTRATES 审中-公开用于将CVD成长的石墨烯转移到疏水性基质上的石墨烯和无聚合物方法
公开(公告)号：EP3233727A1
公开(公告)日：2017-10-25
申请号：EP15820757.1
申请日：2015-12-16
Applicant: Corning Incorporated
Inventor： JOHNSON, Benedict Yorke , MAZUMDER, Prantik , SONI, Kamal Kishore
IPC: C01B32/182
CPC classification number: B32B17/06 , B32B9/007 , B32B18/00 , B32B37/025 , B32B37/18 , B32B38/00 , B32B2250/02 , B32B2313/04 , B32B2315/02 , B32B2315/08 , C01B32/194 , C04B2237/52 , C04B2237/86 , C23F1/18
Abstract: Described herein are methods for improved transfer of graphene from formation substrates to target substrates. In particular, the methods described herein are useful in the transfer of high-quality chemical vapor deposition-grown monolayers of graphene from metal, e.g., copper, formation substrates via non-polymeric methods. The improved processes provide graphene materials with less defects in the structure.
Abstract translation: 本文描述了用于改善石墨烯从地层基板到目标基板的转移的方法。 特别地，本文描述的方法可用于通过非聚合物方法从金属（例如铜）形成基底转移高质量化学气相沉积生长的石墨烯单层。 改进的工艺提供石墨烯材料，其结构缺陷较少。
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公开(公告)号：EP3034654B1
公开(公告)日：2017-10-25
申请号：EP14199223.0
申请日：2014-12-19
Applicant: Atotech Deutschland GmbH
Inventor： Lager, Markku , Clicque, Arno , Tews, Dr. Dirk
CPC classification number: C23F1/18 , C23C28/321 , C23F1/46 , C23G1/103 , H05K3/062 , H05K3/064 , H05K3/383 , H05K2203/124
Abstract: The present invention is related to a composition for micro etching of a copper or a copper alloy surface, wherein the composition comprises i) at least a source of Fe 3+ ions, ii) at least a source of Br- ions, iii) at least an inorganic acid, and iv) at least one etch refiner according to formula I wherein R1 is selected from the group consisting of hydrogen, C 1 -C 5 -alkyl or a substituted aryl or alkaryl group; R2 is selected from the group consisting of hydrogen, C 1 -C 5 -alkyl or C 1 -C 5 -alkoxy; R3, R4 are selected from the group consisting of hydrogen and C 1 -C 5 -alkyl; and X- is a suitable anion. Further, the present invention is directed to a method for micro etching of copper or copper alloy surfaces using such a composition.
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5.发明授权COPPER FOIL FOR PRODUCING GRAPHENE AND METHOD OF PRODUCING GRAPHENE USING THE SAME 有权用于生产石墨烯的铜箔和使用该石墨烯生产石墨烯的方法
公开(公告)号：EP2664580B1
公开(公告)日：2017-06-14
申请号：EP12747854.3
申请日：2012-02-20
Applicant: JX Nippon Mining & Metals Corporation
Inventor： CHIBA, Yoshihiro
CPC classification number: C01B31/0453 , B21B1/40 , B21B2003/005 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/194 , C22C9/00 , C22C9/02 , C22F1/02 , C22F1/08 , C23F1/18 , Y10T428/12431
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Patent Agency Ranking6.发明公开
公开(公告)号：EP3124650A1
公开(公告)日：2017-02-01
申请号：EP14886931.6
申请日：2014-09-08
Applicant: Hitachi, Ltd.
Inventor： KAWAMURA Toshinori , TAMURA Akinori , NAKANO Hiroshi , KITO Kazuaki
CPC classification number: B24C1/06 , C21D7/06 , C23F1/18 , C23F1/28 , F28D7/16 , F28F13/185 , F28F19/06 , F28F21/083
Abstract: In a surface treatment method for stainless steel, a stainless-steel surface fine-structure forming method for forming a fine irregular structure (roughened surface) having a high surface area is provided. A stainless-steel surface treatment method according to the present invention is for forming the fine structure on the surface of stainless steel. The method includes: a first step of performing grain refining treatment for refining crystal grains in the surface of stainless steel; and a second step performed, after the first step, for roughening etching the surface of stainless steel with an etching solution.
Abstract translation: 在不锈钢的表面处理方法中，提供了用于形成具有高表面积的微小不规则结构（粗糙表面）的不锈钢表面微细结构形成方法。 根据本发明的不锈钢表面处理方法用于在不锈钢表面上形成精细结构。 该方法包括：对不锈钢表面的晶粒进行精细化处理的第一工序; 并且在第一步骤之后进行第二步骤，用蚀刻溶液对不锈钢的表面进行粗糙化。
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公开(公告)号：EP2341167A4
公开(公告)日：2016-07-13
申请号：EP09823379
申请日：2009-06-17
Applicant: HITACHI CHEMICAL CO LTD
Inventor： YAMASHITA TOMOAKI , NAKAJIMA SUMIKO , ITOU SADAO , INOUE FUMIO , ARIKE SHIGEHARU
CPC classification number: C23F1/18 , C23F1/02 , H01L2224/16225 , H01L2224/48091 , H01L2224/73204 , H01L2224/73265 , H01L2924/181 , H05K3/384 , H05K3/385 , H05K2203/0315 , H05K2203/1157 , Y10T29/49982 , Y10T428/12438 , Y10T428/12771 , Y10T428/24917 , H01L2924/00012 , H01L2924/00014
Abstract: An object of the present invention is to provide a copper surface treatment method capable of keeping certainly a bonding strength between a copper surface and a resist, or between a copper surface and an insulating resin without forming irregularities having sizes of more than 1 µm on the copper surface, and a copper treated with the method. The surface treatment method, comprising: a first step of forming, on a copper surfaces, a nobler metal than the copper discretely; a second step, subsequent to the first step, of forming copper oxide on the copper surface by oxidation with an alkaline solution containing an oxidizing agent; and third step of dissolving the copper oxide so as to be removed, thereby forming irregularities on the copper surface.
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公开(公告)号：EP2767509A4
公开(公告)日：2015-12-02
申请号：EP12850534
申请日：2012-10-31
Applicant: JX NIPPON MINING & METALS CORP
Inventor： CHIBA YOSHIHIRO , ONO TOSHIYUKI
CPC classification number: C01B31/0453 , B21B1/40 , B82Y30/00 , B82Y40/00 , C01B32/186 , C22C9/00 , C22F1/08 , C22F1/18 , C23F1/18 , Y10T428/12431
Abstract: A copper foil for producing graphene including Cu having a purity of 99.95% by mass or more.
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9.发明公开MICROETCHING AGENT FOR COPPER, REPLENISHMENT SOLUTION THEREOF, AND METHOD FOR PRODUCING WIRING BOARD 有权用于微蚀刻的铜，补充其溶液及其制造方法的电路板
公开(公告)号：EP2878705A1
公开(公告)日：2015-06-03
申请号：EP13762721.2
申请日：2013-03-04
Applicant: MEC COMPANY LTD.
Inventor： KURII, Masayo , TAI, Kiyoto , NAKAMURA, Mami
CPC classification number: C23F1/18 , C23F1/34 , H05K3/0085 , H05K3/022 , H05K3/383 , H05K2203/0307 , H05K2203/0789
Abstract: Disclosed is a microetching solution for copper, a replenishment solution therefor and a method for production of a wiring board. The microetching solution of the present invention consists of an aqueous solution containing a cupric ion, an organic acid, a halide ion, an amino group-containing compound having a molecular weight of 17 to 400 and a polymer. The polymer is a water-soluble polymer including a polyamine chain and/or a cationic group and having a weight average molecular weight of 1000 or more. When a concentration of the amino group-containing compound is A% by weight and a concentration of the polymer is B% by weight, a value of A/B of the microetching solution of the present invention is 50 to 6000. According to the present invention, an adhesion between copper and a resin or the like may be maintained even with a low etching amount.
Abstract translation: 公开了一种用于铜微蚀刻剂，其的补充溶液以及用于生产接线板的方法。 的水溶液含有铜离子的有机酸，卤化物离子的本发明besteht的微蚀刻剂，对氨基具有17至400和聚合物的分子量基团的化合物。 该聚合物是一种水溶性聚合物包含聚胺链和/或阳离子基团，并且具有1,000或更高的重均分子量。 重量当含氨基的化合物的浓度是按重量计，并且聚合物的浓度A％是B％，本发明的微蚀刻剂的A / B的值是50到6000。根据本 发明中，对铜和树脂或类似物之间的粘附性可以甚至具有低蚀刻量被维持。
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10.发明公开ETCHANT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME 有权ÄTZMITTELUND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS DAMIT
公开(公告)号：EP2518759A4
公开(公告)日：2014-11-05
申请号：EP10839564
申请日：2010-12-24
Applicant: MITSUBISHI GAS CHEMICAL CO
Inventor： HOSOMI AKIRA
IPC: C23F1/18 , C23F1/44 , H01L21/3213 , H01L23/00 , H01L23/525
CPC classification number: H01L21/32134 , C23F1/02 , C23F1/18 , C23F1/26 , C23F1/44 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/02311 , H01L2224/03462 , H01L2224/0361 , H01L2224/0391 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05548 , H01L2224/05573 , H01L2224/05655 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/1191 , H01L2224/13022 , H01L2224/13024 , H01L2224/13082 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2924/01083 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
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