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公开(公告)号：EP3619577A1
公开(公告)日：2020-03-11
申请号：EP18794270.1
申请日：2018-04-27
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2.发明公开
公开(公告)号：EP3460572A1
公开(公告)日：2019-03-27
申请号：EP17193045.6
申请日：2017-09-26
摘要： A manufacturing method for a reticle is described, the manufacturing method comprising:
- providing a reticle to a first pattern generating tool;
- patterning the reticle with a first pattern;
- providing the reticle having the first pattern to a second pattern generating tool; and
- patterning the reticle with a second pattern configured to form a combined pattern with the first pattern, wherein the combined pattern has a different functionality than the first pattern.-
3.发明授权DEFECT INSPECTING METHOD, SORTING METHOD AND PRODUCING METHOD FOR PHOTOMASK BLANK 有权光刻空白的缺陷检测方法，分选方法和生产方法
公开(公告)号：EP3139213B1
公开(公告)日：2018-05-09
申请号：EP16185344.5
申请日：2016-08-23
IPC分类号： G03F1/84 , G03F1/72 , G01N21/88 , G01N21/956
CPC分类号： G01N21/8851 , G01N21/956 , G01N2021/95676 , G03F1/84
摘要： Disclosed is a method of inspecting a defect present at a surface portion of a photomask blank which includes an optical film, and a thin film. The method includes: selecting and designating an inspection treatment procedure and a criterion for determination of rugged shape of the defect which correspond to modes of the optical film and the thin film of the photomask blank; applying inspection light to a region including the defect while maintaining a distance between the defect and an objective lens of an inspecting optical system, based on the designated inspection treatment procedure, and collecting reflected light from the region irradiated with the inspection light, as a magnified image of the region, through the inspecting optical system; and determining the rugged shape of the defect, from light intensity distribution of the magnified image, based on the designated criterion for determination.
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4.发明公开DEFECT INSPECTING METHOD, SORTING METHOD AND PRODUCING METHOD FOR PHOTOMASK BLANK 有权光刻空白的缺陷检测方法，分选方法和生产方法
公开(公告)号：EP3139213A3
公开(公告)日：2017-05-10
申请号：EP16185344.5
申请日：2016-08-23
IPC分类号： G03F1/84 , G03F1/72 , G01N21/88 , G01N21/956
CPC分类号： G01N21/8851 , G01N21/956 , G01N2021/95676 , G03F1/84
摘要： Disclosed is a method of inspecting a defect present at a surface portion of a photomask blank which includes an optical film, and a thin film. The method includes:
selecting and designating an inspection treatment procedure and a criterion for determination of rugged shape of the defect which correspond to modes of the optical film and the thin film of the photomask blank; applying inspection light to a region including the defect while maintaining a distance between the defect and an objective lens of an inspecting optical system, based on the designated inspection treatment procedure, and collecting reflected light from the region irradiated with the inspection light, as a magnified image of the region, through the inspecting optical system; and
determining the rugged shape of the defect, from light intensity distribution of the magnified image, based on the designated criterion for determination.摘要翻译： 公开了一种检查存在于包括光学膜和薄膜的光掩模坯的表面部分处的缺陷的方法。 该方法包括：选择并指定用于确定与光学膜和光掩模坯的薄膜的模式相对应的缺陷的凹凸形状的检验处理程序和标准; 在保持检查光学系统的缺陷与物镜之间的距离的同时，基于指定的检查处理过程将检查光施加到包括缺陷的区域，并且将从被检查光照射的区域反射的光收集为放大的 该区域的图像，通过检查光学系统; 以及基于所确定的指定标准从放大图像的光强度分布确定缺陷的凹凸形状。
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公开(公告)号：EP2397900B1
公开(公告)日：2014-10-08
申请号：EP10741178.7
申请日：2010-02-04
发明人： NAGAI, Takaharu , TAKAMIZAWA, Hideyoshi , MOHRI, Hiroshi , MORIKAWA, Yasutaka , HAYANO, Katsuya
IPC分类号： G03F1/72 , H01L21/027 , G03F1/00 , G03F1/36 , G03F1/32
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
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6.发明公开REFLECTIVE OPTICAL ELEMENT FOR THE EUV WAVELENGTH RANGE, METHOD FOR PRODUCING AND FOR CORRECTING SUCH AN ELEMENT, PROJECTION LENS FOR MICROLITHOGRAPHY COMPRISING SUCH AN ELEMENT, AND PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY COMPRISING SUCH A PROJECTION LENS 审中-公开用于生产这样的元素的校正，投影透镜，用于与这样的元件和投射曝光APPARATUS FOR MICRO LITHOGRAPHY MICRO LITHOGRAPHY与这样的投影透镜FOR EUV波长范围的反射光学元件，AND METHOD
公开(公告)号：EP2764407A1
公开(公告)日：2014-08-13
申请号：EP12756669.3
申请日：2012-08-14
申请人： Carl Zeiss SMT GmbH
发明人： WEISS, Markus , KERWIEN, Norbert , WEISER, Martin , BITTNER, Boris , WABRA, Norbert , SCHLICHENMAIER, Christoph , CLAUSS, Wilfried
CPC分类号： G02B5/0891 , B29D11/00009 , B29D11/00865 , B82Y10/00 , G02B13/143 , G03F1/24 , G03F1/60 , G03F1/72 , G03F7/70316 , G03F7/70591 , G03F7/70958 , G21K1/062 , G21K2201/067
摘要： The invention relates to a reflective optical element 39 for the EUV wavelength range comprising a layer arrangement applied on the surface of a substrate, wherein the layer arrangement comprises at least one layer subsystem 37 consisting of a periodic sequence of at least one period of individual layers, wherein the period comprises two individual layers having different refractive indices in the EUV wavelength range, wherein the substrate has a variation of the density of more than 1% by volume at least along an imaginary surface 30 at a fixed distance of between 0 μm and 100 μm from the surface, and wherein the substrate is protected against long-term ageing or densification by EUV radiation either by means of a protective layer or by means of a protective layer subsystem of the layer arrangement or by means of a correspondingly densified surface region 35 of the substrate. Furthermore, the invention relates to a method for producing such a reflective optical element. Furthermore, the invention relates to a method for correcting such a reflective optical element, and to a projection lens comprising such an optical element, and to a projection exposure apparatus comprising such a projection lens.
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公开(公告)号：EP3726566B1
公开(公告)日：2023-08-02
申请号：EP20178955.9
申请日：2008-09-16
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9.发明公开
公开(公告)号：EP4081865A1
公开(公告)日：2022-11-02
申请号：EP21707943.3
申请日：2021-02-23
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