公开(公告)号：EP2992556B1

公开(公告)日：2022-07-06

申请号：EP14791065.7

申请日：2014-05-02

发明人： BLAYDES, Holly, Ann ,  ANDREINI, Kristian, William ,  HUBER, William, Hullinger ,  HINNERS, Eugene, Thomas ,  SHIANG, Joseph, John ,  LIANG, Yong ,  CHOI, Jongwoo

IPC分类号： C23C14/06 ,  H01L31/18 ,  H01L27/098 ,  H01L31/073 ,  H01L31/065 ,  H01L31/0272 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/0296 ,  H01L21/02 ,  H01L31/032 ,  H01L31/072 ,  H01L27/142 ,  H01L27/14 ,  H01L31/0392

公开(公告)号：EP2834847B1

公开(公告)日：2021-06-02

申请号：EP13722090.1

申请日：2013-03-27

发明人： PFEIFFER, Reto ,  ZILTENER, Roger ,  NETTER, Thomas

IPC分类号： H01L27/142 ,  H01L31/042 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465

公开(公告)号：EP3280952B1

公开(公告)日：2020-03-04

申请号：EP15888114.4

申请日：2015-04-07

申请人： Materion Corporation

发明人： HUANG, Yuyong ,  CAO, Simon

IPC分类号： F21V13/00 ,  C09K11/02 ,  C09K11/08 ,  G02B26/00 ,  G03B21/20 ,  H01L27/14 ,  H01L27/142

公开(公告)号：EP2219222B1

公开(公告)日：2019-04-03

申请号：EP10001157.6

申请日：2010-02-04

申请人： LG ELECTRONICS INC.

发明人： Ji, Kwangsun ,  Lee, Heonmin ,  Choi, Junghoon ,  Ahn, Sehwon

IPC分类号： H01L27/142 ,  H01L31/0236 ,  H01L31/0216

公开(公告)号：EP2393122B2

公开(公告)日：2018-12-26

申请号：EP10735801.2

申请日：2010-01-26

申请人： Kyocera Corporation

发明人： MIYAUCHI, Koji

IPC分类号： H01L27/142 ,  H01L31/046

CPC分类号： H01L31/0465 ,  H01L31/046 ,  Y02E10/50

摘要： A photoelectric conversion cell includes a first electrode layer and a second electrode layer which are positioned apart from each other at an interval, a first semiconductor layer positioned on the first electrode layer and having a first conductivity type, a second semiconductor layer 4 positioned on or above the first semiconductor layer and having a second conductivity type forming a p-n junction with the first semiconductor layer, a connecting part for electrically connecting the second semiconductor layer to the second electrode layer, and a linear electrode positioned on or above the second semiconductor layer and reaching a first end of the second semiconductor layer from the connecting part.

公开(公告)号：EP1914808B1

公开(公告)日：2018-04-04

申请号：EP07016452.0

申请日：2007-08-22

申请人： SolAero Technologies Corp.

发明人： Cornfeld, Arthur ,  Stan, Mark A. ,  Sharps, Paul R.

IPC分类号： H01L31/068 ,  H01L27/142 ,  H01L31/0304

CPC分类号： H01L27/142 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/0687 ,  Y02E10/544

摘要： A solar cell includes a semiconductor substrate and a sequence of semiconductor layers disposed over the substrate including a window layer. The solar cell also includes a semiconductor silicon-containing cap layer over the window layer. The cap layer is spatially separated from the window layer by a semiconductor barrier layer that either includes no silicon or has a silicon concentration that is significantly lower than the silicon concentration of the cap layer.

公开(公告)号：EP3297026A1

公开(公告)日：2018-03-21

申请号：EP17198268.9

申请日：2012-02-09

申请人： Alta Devices, Inc.

发明人： NIE, Hui ,  KAYES, Brendan M. ,  KIZILYALLI, Isik C.

IPC分类号： H01L27/142 ,  H01L31/0304 ,  H01L31/0735 ,  H01L31/0443

CPC分类号： H01L31/03046 ,  H01L27/142 ,  H01L31/0304 ,  H01L31/0443 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

摘要： Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

摘要翻译： 本发明的实施例总体上涉及光伏装置。 在一个实施例中，用于形成砷化镓基光伏器件的方法包括提供半导体结构，所述结构包括包含砷化镓的吸收层。 在半导体结构的p-n结中提供旁路功能，其中在反向偏置条件下，p-n结以受控方式由齐纳击穿效应击穿。

公开(公告)号：EP2487712B1

公开(公告)日：2017-11-08

申请号：EP12154739.2

申请日：2012-02-09

申请人： Alta Devices, Inc.

发明人： Nie, Hui ,  Kayes, Brendan M. ,  Kizilyalli, Isik C.

IPC分类号： H01L27/142 ,  H01L31/0304 ,  H01L31/0735 ,  H01L31/0443

CPC分类号： H01L31/03046 ,  H01L27/142 ,  H01L31/0304 ,  H01L31/0443 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

摘要： Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

公开(公告)号：EP2614525B1

公开(公告)日：2016-11-02

申请号：EP11758430.0

申请日：2011-09-06

申请人： Fianium Limited

发明人： BAIRD, Brian W ,  GERKE, Timothy D

IPC分类号： H01L27/142 ,  H01L31/0749 ,  B23K26/40 ,  B23K26/06 ,  B23K26/36 ,  B23K26/073

CPC分类号： H01L31/0236 ,  B23K26/0624 ,  B23K26/0732 ,  B23K26/364 ,  B23K26/40 ,  B23K2203/172 ,  H01L21/268 ,  H01L21/78 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/073 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/543

公开(公告)号：EP1775778B2

公开(公告)日：2016-09-28

申请号：EP06016119.7

申请日：2006-08-02

申请人： SolAero Technologies Corp.

发明人： Stan, Mark. A. ,  Bradford Clevenger, Marvin ,  Sharps, Paul R.

IPC分类号： H01L31/0224 ,  H01L31/0687 ,  H01L27/142 ,  H01L31/05

CPC分类号： H01L31/0687 ,  H01L27/1421 ,  H01L31/022425 ,  H01L31/0508 ,  Y02E10/544 ,  Y02P70/521