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    SOLAR CELLS AND PHOTODETECTORS WITH SEMICONDUCTING NANOSTRUCTURES
    6.
    发明公开
    SOLAR CELLS AND PHOTODETECTORS WITH SEMICONDUCTING NANOSTRUCTURES 有权
    太阳能电池和光电探测器一半的铅性纳米结构

    公开(公告)号：EP2332175A2

    公开(公告)日：2011-06-15

    申请号：EP09791983.1

    申请日：2009-08-27

    申请人： Vanguard Solar, Inc.

    发明人： FLOOD, Dennis, J.

    IPC分类号： H01L31/0272 ,  H01L51/00 ,  H01L51/42

    CPC分类号： H01L51/4266 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0322 ,  H01L31/0352 ,  H01L31/03529 ,  Y02E10/541 ,  Y02E10/544 ,  Y02E10/549

    摘要： Improved photovoltaic devices and methods are disclosed. In one embodiment, an exemplary photovoltaic device includes a semiconductor layer and a light-responsive layer (which can be made, for example, of a semiconductor material) which form a junction, such as a p-n junction. The light-responsive layer can include a plurality of carbon nanostructures, such as carbon nanotubes, located therein. In many cases, the carbon nanostructures can provide a conductive pathway within the light-responsive layer. In another embodiment, an exemplary photovoltaic device can include a light- responsive layer made of a semiconductor material in which is embedded a plurality of semiconducting carbon nanostructures (such as p-type single-wall carbon nanotubes). The interfaces between the semiconductor material and the semiconducting carbon nanostructures can form p-n junctions. In yet other embodiments, exemplary photovoltaic devices include semiconductor nanostructures, which can take a variety of forms, in addition to the carbon nanostructures. Further embodiments include a wide variety of other configurations and features. Methods of fabricating photovoltaic devices, as well as nanostructured photodetectors, as also disclosed.

    DIRECT RADIOGRAPHIC IMAGING PANEL HAVING A DIELECTRIC LAYER WITH AN ADJUSTED TIME CONSTANT
    8.
    发明公开
    DIRECT RADIOGRAPHIC IMAGING PANEL HAVING A DIELECTRIC LAYER WITH AN ADJUSTED TIME CONSTANT 有权
    DIREKTER BILDSENSORFÜRRÖNTGENSTRAHLUNGMIT EINER DIELEKTRISCHEN SCHICHT，DIE EINE ANGEPASSTE ZEITKONSTANTE AUFWEIST

    公开(公告)号：EP1114468A4

    公开(公告)日：2001-09-12

    申请号：EP99930787

    申请日：1999-06-24

    申请人： DIRECT RADIOGRAPHY CORP

    发明人： LEE DENNY L Y ,  DAVIS JAMES E

    IPC分类号： G01T1/24 ,  H01L27/14 ,  H01L31/0216 ,  H01L31/0272 ,  H01L31/09 ,  H01L31/115 ,  H01L31/18

    CPC分类号： H01L27/14676

    摘要： A radiation detection sensor (10) includes a charge storage capacitor (14), a radiation sensitive layer (50) over the charge storage capacitor, and a dielectric layer (52) over the radiation sensitive layer. The dielectric layer has an adjusted resistivity rho resulting in a time constant tau = rho kappa epsilon 0 between 0.050 and 20 second, wherein kappa is the dielectric constant of the dielectric layer, and epsilon 0 is the permittivity of free space. The radiation sensitive layer is a photoconductor, and the dielectric layer is, preferably, a linear segmented polyurethane.

    摘要翻译： 辐射检测传感器（10）包括电荷存储电容器（14），电荷存储电容器上的辐射敏感层（50）以及辐射敏感层上的电介质层（52）。 电介质层具有调节的电阻率ρ，导致在0.050和20秒之间的时间常数tau =ρkε0，其中κ是电介质层的介电常数，并且ε0是自由空间的介电常数。 辐射敏感层是光电导体，并且电介质层优选为线性分段聚氨酯。