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228 records (took 0.023 seconds)

    93.
    发明专利
    有权

    公开(公告)号：JP3606842B2

    公开(公告)日：2005-01-05

    申请号：JP2002043887

    申请日：2002-02-20

    IPC: H01J37/06 ,  H01J37/077 ,  H01J37/20

    Electron beam excited plasma film formation system
    94.
    发明专利
    Electron beam excited plasma film formation system 有权
    电子束激发等离子体膜形成系统

    公开(公告)号：JP2004111980A

    公开(公告)日：2004-04-08

    申请号：JP2003347450

    申请日：2003-10-06

    Applicant: Kawasaki Heavy Ind Ltd ,  川崎重工業株式会社

    Inventor： TOKAI MASAKUNI ,  RIYUUJI MAKOTO ,  BAN MASAHITO

    IPC: H05H1/24 ,  C23C16/48 ,  C23C16/50 ,  H01J37/077 ,  H01J37/32 ,  H01L21/205

    Abstract: PROBLEM TO BE SOLVED: To provide an electron beam excited plasma film formation system which prevents the film formation rate declinination and realizes the homogenization of the film composition, even when the kinds of a raw material gas are changed or when a mixed gas is used. SOLUTION: An electron beam excited plasma film formation system 1 has an electron beam generating device 2a for generating an electron beam with high energy, an electron beam generating device 2b for generating an electron beam with low energy and a plasma reaction device 3 for generating plasma by electron beam excitation. When an electron beam with high energy is made incident, a plasma PBa consisting of gas molecules that requires high activation energy for ionization or dissociation is formed efficiently. When an electron beam with low energy is made incident, a plasma PBb consisting of gas molecules with low activation energy is formed efficiently. Each of the plasma PBa and PBb conducts chemical vapor deposition on a sample S and forms a multi-element thin film. COPYRIGHT: (C)2004,JPO

    Abstract translation: 要解决的问题：为了提供一种电子束激发的等离子体膜形成系统，其防止成膜速率下降并实现膜组合物的均匀化，即使当原料气体的种类发生变化时，或者当混合气体 用来。 解决方案：电子束激发等离子体膜形成系统1具有用于产生高能电子束的电子束产生装置2a，用于产生低能量的电子束的电子束产生装置2b和等离子体反应装置3 用于通过电子束激发产生等离子体。 当入射具有高能量的电子束时，有效地形成由需要用于电离或解离的高活化能的气体分子组成的等离子体PBa。 当入射具有低能量的电子束时，有效地形成由具有低活化能的气体分子组成的等离子体PBB。 每个等离子体PBa和PBb在样品S上进行化学气相沉积并形成多元素薄膜。 版权所有（C）2004，JPO

    Plasma generator and thin-film forming device
    95.
    发明专利
    Plasma generator and thin-film forming device 审中-公开
    等离子体发生器和薄膜形成装置

    公开(公告)号：JP2003007240A

    公开(公告)日：2003-01-10

    申请号：JP2001189356

    申请日：2001-06-22

    Applicant: Jeol Ltd ,  日本電子株式会社

    Inventor： TANIGUCHI AKIRA ,  TAKASHIMA TORU

    IPC: H05H1/24 ,  B01J19/08 ,  C23C14/32 ,  C23C16/503 ,  H01J37/077

    Abstract: PROBLEM TO BE SOLVED: To provide a plasma generator that realizes stabilized plasma discharge and the like.
    SOLUTION: A discharge chamber houses a cathode 16, anodes 21A and 21B and a cylindrical shielding body 22, and has a second shielding body 30, having an aperture 31 in a central portion mounted between the cathode 16 and the shield body 22. Discharge power source 18 applies discharge voltage between the cathode 16 and the anodes 21A and 21B, and a means supplies discharge gas to the discharging chamber. Electrons in a plasma, formed in the discharge chamber are passed through a part of the shielding body 22 inside openings of the anodes 21A and 21B, so as to make them irradiate in a vacuum vessel outside the discharge chamber.
    COPYRIGHT: (C)2003,JPO

    Abstract translation: 要解决的问题：提供实现稳定的等离子体放电等的等离子体发生器。 解决方案：放电室容纳阴极16，阳极21A和21B以及圆筒形屏蔽体22，并且具有第二屏蔽体30，第二屏蔽体30在安装在阴极16和屏蔽体22之间的中心部分具有孔31。放电功率 源极18在阴极16和阳极21A和21B之间施加放电电压，并且装置向放电室提供放电气体。 在放电室中形成的等离子体中的电子通过阳极21A和21B的开口内的屏蔽体22的一部分，使其在放电室外的真空容器中照射。

    INDUCTIVE COUPLING HIGH-FREQUENCY ELECTRON SOURCE WHERE ELECTRON IS ELECTROSTATICALLY INCLUDED FOR REDUCED POWER REQUIREMENT
    96.
    发明专利
    INDUCTIVE COUPLING HIGH-FREQUENCY ELECTRON SOURCE WHERE ELECTRON IS ELECTROSTATICALLY INCLUDED FOR REDUCED POWER REQUIREMENT 审中-公开

    公开(公告)号：JP2002216688A

    公开(公告)日：2002-08-02

    申请号：JP2001358180

    申请日：2001-11-22

    Applicant: ASTRIUM GMBH

    Inventor： CLOSS MARTIN ,  MULLER JOHANN

    IPC: G21K1/00 ,  H01J3/02 ,  H01J11/00 ,  H01J37/077 ,  H01J37/32 ,  H05H3/02

    Abstract: PROBLEM TO BE SOLVED: To provide an inductive coupling high-frequency electron source for reduced power requirement. SOLUTION: The inductive coupling high-frequency electron source comprises a plasma chamber 1 where an open section is provided at least to a first end, with the total area of an open section 5 of the plasma chamber 1 being A0, a gas inlet 2 for an ionizing gas, and a high-frequency coil 3. The inside wall of the plasma chamber 1 comprises a conductive section 4, at least a part of which is connected to a current source 6. The total area of the entire surface of the conductive section 4 is Ac, and the maximum ratio between a surface A0 and Ac is represented by a numerical expression 1. (numerical expression 1) where, m0 is the mass of ionizing gas, me is mass of electron, and e is Euler number.

    97.
    发明专利
    失效

    公开(公告)号：JP3032380B2

    公开(公告)日：2000-04-17

    申请号：JP17424892

    申请日：1992-07-01

    IPC: H01J37/077 ,  H05H7/08

    PLASMA GUN
    99.
    发明专利
    PLASMA GUN 失效

    公开(公告)号：JPH09147773A

    公开(公告)日：1997-06-06

    申请号：JP32783795

    申请日：1995-11-24

    Applicant: STANLEY ELECTRIC CO LTD

    Inventor： SUZUKI YOSHIO ,  SHINNO CHIKASHI

    IPC: H05H1/24 ,  C23C14/30 ,  H01J27/02 ,  H01J27/20 ,  H01J37/077 ,  H01J37/08

    Abstract: PROBLEM TO BE SOLVED: To reduce maintenance time by constructing an opening cover from a first opening cover directly threaded into the bore of an opening and a second cover threaded into the bore of the first opening cover. SOLUTION: An opening 3a is doubly covered with first 61 and second 62 opening covers. Therefore sputter etching at the time of operation of a plasma gun 1 is performed on the side of the cover 62 exposed to electron beams, and not on the side of the cover 1 covered with the cover 62. After the gun 1 has been used for a predetermined time, the cover 62 loses its thickness and needs maintenance, but since the cover 62 is mounted by being threaded into the threaded part 61 a of the cover 61 made of the same high-melting-point metal as the cover 62, the covers are not both degraded by temperature rises caused by the electron beams. Since the cover 62 can be disconnected from the threaded part 61a, only the cost of the cover 62 is necessary, resulting in reduced maintenance cost.

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